ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. SOT23-6 SOT89 and SOT223 versions are also available. FEATURES • High voltage • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • Complementary P-channel Type ZVP4525E6 • SOT23-6 package APPLICATIONS • Earth Recall and dialling switches • Electronic hook switches • High Voltage Power MOSFET Drivers • Telecom call routers • Solid state relays Top View ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZVN4525E6TA 7 8mm embossed 3000 units ZVN4525E6TC 13 8mm embossed 10000 units DEVICE MARKING • N52 ISSUE 1 - MARCH 2001 1 ZVN4525E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 250 V Gate Source Voltage V GS ±40 V Continuous Drain Current (V GS =10V; TA=25°C)(a) (V GS =10V; TA=70°C)(a) ID ID 230 183 mA mA A Pulsed Drain Current (c) I DM 1.44 Continuous Source Current (Body Diode) IS 1.1 A Pulsed Source Current (Body Diode) I SM 1.44 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Operating and Storage Temperature Range T j : T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θ JA 113 °C/W Junction to Ambient (b) R θ JA 65 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal NB High Voltage Applications For high voltage applications, the appropriate industry sector guidelines should be considered with regard to voltage spacing between conductors. ISSUE 1 - MARCH 2001 2 ZVN4525E6 CHARACTERISTICS ISSUE 1 - MARCH 2001 3 ZVN4525E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNI CONDITIONS. T STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs 250 0.8 0.3 285 V I D =1mA, V GS =0V V DS =250V, V GS =0V 35 500 nA ±1 ±100 nA 1.4 1.8 V I =1mA, V DS = V GS 5.6 5.9 6.4 8.5 9.0 9.5 Ω Ω Ω V GS =10V, I D =500mA V GS =4.5V, I D =360mA V GS =2.4V, I D =20mA 0.475 S V DS =10V,I D =0.3A V GS =±40V, V DS =0V D DYNAMIC (3) Input Capacitance C iss 72 pF Output Capacitance C oss 11 pF Reverse Transfer Capacitance C rss 3.6 pF Turn-On Delay Time t d(on) 1.25 ns Rise Time tr 1.70 ns Turn-Off Delay Time t d(off) 11.40 ns Fall Time tf 3.5 ns Total Gate Charge Qg 2.6 3.65 nC Gate-Source Charge Q gs 0.2 0.28 nC Gate Drain Charge Q gd 0.5 0.70 nC 0.97 V T j =25°C, I S =360mA, V GS =0V T j =25°C, I F =360mA, di/dt= 100A/µs V DS =25 V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =30V, I D =360mA R G =50Ω, V qs =10V (refer to test circuit) V DS =25V,V GS =10V, I D =360mA(refer to test circuit) SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD Reverse Recovery Time (3) t rr 186 260 ns Reverse Recovery Charge (3) Q rr 34 48 nC (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - MARCH 2001 4 ZVN4525E6 TYPICAL CHARACTERISTICS ISSUE 1 - MARCH 2001 5 ZVN4525E6 CHARACTERISTICS ISSUE 1 - MARCH 2001 6 ZVN4525E6 CHARACTERISTICS Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit ISSUE 1 - MARCH 2001 7 ZVN4525E6 PAD LAYOUT DETAILS PACKAGE DIMENSIONS e b L 2 E1 E DATUM A a e1 D C A A2 A1 DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF 0.037 REF e1 1.90 REF 0.074 REF L 0° 10° 0° 10° Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide © Zetex plc 2000 www.zetex.com Ths publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - MARCH 2001 8