P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω G REFER TO ZVP2110A FOR GRAPHS D G D S S E-Line TO92 Compatible E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS -100 V Drain-Source Voltage V DS -100 V Continuous Drain Current at T amb=25°C ID -230 mA Continuous Drain Current at T amb=25°C ID -230 mA Pulsed Drain Current I DM -3 A Pulsed Drain Current I DM -3 A Gate Source Voltage V GS ± 20 V Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg 700 mW -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. V I D=-1mA, V GS=0V Drain-Source Breakdown Voltage BV DSS -100 -3.5 V ID=-1mA, V DS= V GS Gate-Source Threshold Voltage V GS(th) -1.5 I GSS 20 nA V GS=± 20V, V DS=0V Gate-Body Leakage I DSS -1 -100 µA µA V DS=-100 V, V GS=0 V DS=-80 V, V GS=0V, T=125°C (2) Zero Gate Voltage Drain Current mA V DS=-25 V, V GS=-10V On-State Drain Current(1) I D(on) 8 Ω V GS=-10V,I D=-375mA Static Drain-Source On-State R DS(on) Resistance (1) mS V DS=-25V,I D=-375mA Forward Transconductance (1)(2) Input Capacitance (2) C iss 100 pF V DS=-25V, V GS=0V, f=1MHz Common Source Output Capacitance (2) C oss 35 pF C rss 10 pF PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS -100 Gate-Source Threshold Voltage V GS(th) -1.5 Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) I D(on) g fs MAX. UNIT CONDITIONS. -750 Static Drain-Source On-State R DS(on) Resistance (1) Forward Transconductance (1)(2) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 125 MAX. UNIT CONDITIONS. V I D=-1mA, V GS=0V -3.5 V ID=-1mA, V DS= V GS I GSS 20 nA V GS=± 20V, V DS=0V I DSS -1 -100 µA µA V DS=-100 V, V GS=0 V DS=-80 V, V GS=0V, T=125°C (2) mA V DS=-25 V, V GS=-10V 8 Ω V GS=-10V,I D=-375mA mS V DS=-25V,I D=-375mA g fs -750 125 Input Capacitance (2) C iss 100 pF Common Source Output Capacitance (2) C oss 35 pF Reverse Transfer Capacitance (2) C rss 10 pF Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) t d(on) 7 ns Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) tr 15 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) t d(off) 12 ns Fall Time (2)(3) tf 15 ns Turn-Off Delay Time (2)(3) t d(off) 12 ns Fall Time (2)(3) tf 15 ns V DD ≈-25V, I D=-375mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-424 V DS=-25V, V GS=0V, f=1MHz V DD ≈-25V, I D=-375mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-421 Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator ( 3 ) ZVP2110A ZVP2110A TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS -1.0 -8V -0.8 -7V -0.6 -6V -0.4 -5V -4.5V -4V -4V -3.5V -0.2 0 0 -10 -20 -30 -40 -1.4 -12V -1.2 -1.0 -0.8 -7V -0.6 0 -50 0 -2 -4 -6 -8 250 250 VDS=-10V 200 150 100 50 0 0 -0.2 -0.6 -0.8 -1.0 -1.2 -1.4 -4 ID= -0.5A -2 -0.25A -0.1A 0 0 -2 -4 -6 -8 -10 -1.2 VDS=-10V -1.0 -0.8 -0.6 -0.4 60 Ciss 40 20 -0.2 Crss 0 0 VGS-Gate Source Voltage (Volts) -2 -4 -6 -8 -10 0 -20 -40 -60 -80 -100 VDS-Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts) -5V -7V 10 -10V -20V 10 100 Normalised RDS(on) and VGS(th) VGS=-4V 1000 2.4 2.2 VGS=-10V ID=-0.375A 2.0 ) (on DS 1.8 R ce an ist es R e urc -So ain Dr 1.6 1.4 1.2 1.0 Gate Thresh old 0.8 0.6 VGS=VDS ID=-1mA Voltage VGS (th ) -40 -20 0 20 40 60 80 100 120 140 160 180°C ID-Drain Current (mA) On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature 3-422 -4 -6 -8 -10 0 ID=- 0.5A -2 VDS= -25V -50V -100V -4 -6 -8 -10 -12 -14 -16 0 0.5 1.0 1.5 2.0 2.5 Gate charge v gate-source voltage 2.6 100 -2 Q-Gate Charge (nC) Capacitance v drain-source voltage Transfer Characteristics Voltage Saturation Characteristics 0 Transconductance v gate-source voltage Coss 0 50 VGS-Gate Source Voltage (Volts) 80 C-Capacitance (pF) -6 100 0 -1.6 -1.4 VDS=-10V 150 -1.6 Transconductance v drain current Saturation Characteristics -8 -0.4 200 ID- Drain Current (Amps) VDS - Drain Source Voltage (Volts) ID(On) Drain Current (Amps) VDS-Drain Source Voltage (Volts) -5V -4.5V -4V -3.5V -10 -0.2 Output Characteristics RDS(on)-Drain Source On Resistance (Ω) -6V -0.4 VDS - Drain Source Voltage (Volts) 1 -10V -9V -8V gfs-Transconductance (mS) -10V -9V VGS-Gate Source Voltage (Volts) -1.2 -1.6 ID(On) - Drain Current (Amps) ID(On) - Drain Current (Amps) -1.4 VGS= -20V -16V gfs-Transconductance (mS) VGS= -20V -16V -12V -1.6 3-423 3.0 ZVP2110A ZVP2110A TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS -1.0 -8V -0.8 -7V -0.6 -6V -0.4 -5V -4.5V -4V -4V -3.5V -0.2 0 0 -10 -20 -30 -40 -1.4 -12V -1.2 -1.0 -0.8 -7V -0.6 0 -50 0 -2 -4 -6 -8 250 250 VDS=-10V 200 150 100 50 0 0 -0.2 -0.6 -0.8 -1.0 -1.2 -1.4 -4 ID= -0.5A -2 -0.25A -0.1A 0 0 -2 -4 -6 -8 -10 -1.2 VDS=-10V -1.0 -0.8 -0.6 -0.4 60 Ciss 40 20 -0.2 Crss 0 0 VGS-Gate Source Voltage (Volts) -2 -4 -6 -8 -10 0 -20 -40 -60 -80 -100 VDS-Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts) -5V -7V 10 -10V -20V 10 100 Normalised RDS(on) and VGS(th) VGS=-4V 1000 2.4 2.2 VGS=-10V ID=-0.375A 2.0 ) (on DS 1.8 R ce an ist es R e urc -So ain Dr 1.6 1.4 1.2 1.0 Gate Thresh old 0.8 0.6 VGS=VDS ID=-1mA Voltage VGS (th ) -40 -20 0 20 40 60 80 100 120 140 160 180°C ID-Drain Current (mA) On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature 3-422 -4 -6 -8 -10 0 ID=- 0.5A -2 VDS= -25V -50V -100V -4 -6 -8 -10 -12 -14 -16 0 0.5 1.0 1.5 2.0 2.5 Gate charge v gate-source voltage 2.6 100 -2 Q-Gate Charge (nC) Capacitance v drain-source voltage Transfer Characteristics Voltage Saturation Characteristics 0 Transconductance v gate-source voltage Coss 0 50 VGS-Gate Source Voltage (Volts) 80 C-Capacitance (pF) -6 100 0 -1.6 -1.4 VDS=-10V 150 -1.6 Transconductance v drain current Saturation Characteristics -8 -0.4 200 ID- Drain Current (Amps) VDS - Drain Source Voltage (Volts) ID(On) Drain Current (Amps) VDS-Drain Source Voltage (Volts) -5V -4.5V -4V -3.5V -10 -0.2 Output Characteristics RDS(on)-Drain Source On Resistance (Ω) -6V -0.4 VDS - Drain Source Voltage (Volts) 1 -10V -9V -8V gfs-Transconductance (mS) -10V -9V VGS-Gate Source Voltage (Volts) -1.2 -1.6 ID(On) - Drain Current (Amps) ID(On) - Drain Current (Amps) -1.4 VGS= -20V -16V gfs-Transconductance (mS) VGS= -20V -16V -12V -1.6 3-423 3.0