ZVP3306F FEATURES * 60 Volt VDS * RDS(on)=14Ω D S G COMPLEMENTARY TYPE ZVN3306F SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE -60 UNIT V Continuous Drain Current at Tamb=25°C ID -90 mA A Pulsed Drain Current IDM -1.6 Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS -60 Gate-Source Threshold Voltage VGS(th) -1.5 Gate-Body Leakage V ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -0.5 -50 µA µA VDS=-60 V, VGS=0V VDS=-48 V, VGS=0V, T=125°C(2) mA VDS=-18 V, VGS=-10V Ω VGS=-10V, ID=-200mA mS VDS=-18V, ID=-200mA On-State Drain Current I D(on) Static Drain-Source On-State Resistance RDS(on) Forward Transconductance gfs -400 14 60 Input Capacitance Ciss 50 pF Common Source Output Capacitance Coss 25 pF Reverse Transfer Capacitance Crss 8 pF Turn-On Delay Time t d(on) 8 ns Rise Time tr 8 ns Turn-Off Delay Time td(off) 8 ns Fall Time tf 8 ns http://www.twtysemi.com [email protected] VDS=-18V, VGS=0V, f=1MHz VDD ≈ -18V, ID=-200mA 4008-318-123 1 of 1