A Product Line of Diodes Incorporated Green ZX5T1951G 60V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -60V IC = -6A Continuous Collector Current Low Saturation Voltage (-95mV max @ -1A) RSAT = 40mΩ for a low equivalent On-Resistance hFE specified up to -10A for a high gain hold up RoHS Compliant Halogen and Antimony Free. "Green" Device (Note 1) Qualified to AEC-Q101 Standards for High Reliability • • • Case: SOT223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Copper Leadframe Weight: 0.112 grams (Approximate) Applications • • • • Motor driving DC-DC modules Backlight inverters Actuator, relay, and solenoid drivers SOT223 C B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 2) Product ZX5T1951GTA Notes: Marking ZX5T1951 Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 2. For Packaging Details, go to our website at http://www.diodes.com. Marking Information ZX5T 1951 ZX5T1951G Datasheet Number: DS35304 Rev. 4 - 2 ZX5T1951 = Product type Marking Code 1 of 7 www.diodes.com April 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZX5T1951G Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current (Note 3) Peak Pulse Current Base Current Symbol VCBO VCES VCEO VEBO IC ICM IB Value -90 -90 -60 -7 -6 -15 -1 Unit V V V V A A A Value 3.0 24 1.6 12.8 42 78 12.3 -55 to +150 Unit Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance Junction to Lead Operating and Storage Temperature Range Notes: Symbol (Note 3) PD (Note 4) (Note 3) (Note 4) (Note 5) RθJA RθJA RθJL TJ, TSTG W mW /°C °C/W °C 3. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 4. Same as note (3), except the device is surface mounted on 25mm x 25mm with 1oz copper. 5. Thermal resistance from junction to solder-point (at the end of the collector lead). ZX5T1951G Datasheet Number: DS35304 Rev. 4 - 2 2 of 7 www.diodes.com April 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZX5T1951G VCE(sat) 10 Limit DC 1 1s 100ms 100m 10ms 1ms Single Pulse. T amb=25°C 10m 100m 100µs 52x52x1.6(mm) borad 1 10 100 -VCE Collector-Emitter Voltage (V) Max Power Dissipation (W) -IC Collector Current (A) Thermal Characteristics 3.0 Mounted on 52x52x1.6(mm) FR4 PCB 2oz coppor 2.5 2.0 1.5 1.0 0.5 0.0 Mounted on 25x25x1.6(mm) FR4 PCB 2oz coppor 0 20 D=0.5 20 Single Pulse 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 30 10 Datasheet Number: DS35304 Rev. 4 - 2 100 120 140 160 Single Pulse. T amb=25°C 100 52x52x1.6(mm) borad 10 1 100µ Transient Thermal Impedance ZX5T1951G 80 Derating Curve Mounted on 52x52x1.6(mm) FR4 PCB 2oz coppor) D=0.2 60 Temperature (°C) Safe Operating Area 40 40 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 3 of 7 www.diodes.com April 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZX5T1951G Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter Cutoff Current Symbol BVCBO BVCES BVCEO BVEBO ICBO ICES IEBO Collector-Emitter Saturation Voltage (Note 6) VCE(sat) Base-Emitter Saturation Voltage (Note 6) Base-Emitter Turn-On Voltage (Note 6) Output Capacitance (Note 6) VBE(sat) VBE(on) Cobo Min -90 -90 -60 -7 100 100 40 5 - Static Forward Current Transfer Ratio (Note 6) hFE Transition Frequency fT - Switching Time ton toff - 33 80 - 215 300 Notes: Typ -120 -120 -80 -8 <1 <1 <1 240 180 70 14 -16 -55 -85 -200 -1 -0.89 33 Max -50 -50 -10 300 -30 -95 -130 -260 -1.15 -1.0 70 Unit V V V V nA nA nA 120 - MHz - mV V V pF ns Test Condition IC = -100µA IC = -100µA IC = -10mA IE = -100µA VCB = -72V VCB = -72V VEB = -6V IC = -10mA, VCE = -2V IC = -2A, VCE = -2V IC = -5A, VCE = -2V IC = -10A, VCE = -2V IC = -100mA, IB = -10mA IC = -1A, IB = -100mA IC = -2A, IB = -200mA IC = -5A, IB = -500mA IC = -5A, IB = -500mV IC = -5A, VCE = -2V VCB = -10V. f = 1MHz VCE = -10V, IC = -100mA f = 50MHz VCC = -10V, IC = -2A IB1 = -IB2 = -200mA 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% ZX5T1951G Datasheet Number: DS35304 Rev. 4 - 2 4 of 7 www.diodes.com April 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZX5T1951G Typical Electrical Characteristics 1.0 1 Tamb=25°C IC/IB=10 IC/IB =100 0.8 - VCE(SAT) (V) - VCE(SAT) (V) IC/IB=50 100m IC/IB =20 IC/IB=10 10m 1m 0.6 100°C 0.4 25°C 0.2 -55°C 10m 100m 1 0.0 100m 10 - IC Collector Current (A) 300 250 1.0 0.8 25°C 200 150 0.6 0.4 100 -55°C 0.2 50 0.0 1m 0 10m 100m 1 10 IC/IB=10 -55°C 1.0 25°C - VBE(SAT) (V) 100°C 1.2 350 Typical Gain (hFE) Normalised Gain 1.2 VCE=2V 10 VCE(SAT) v IC VCE(SAT) v IC 1.4 1 - IC Collector Current (A) 0.8 0.6 100°C 0.4 1m - IC Collector Current (A) h FE v IC 10m 100m 1 - IC Collector Current (A) 10 VBE(SAT) v IC 1.2 VCE=2V - VBE(ON) (V) 1.0 -55°C 25°C 0.8 0.6 100°C 0.4 1m 10m 100m 1 - IC Collector Current (A) 10 VBE(ON) v IC ZX5T1951G Datasheet Number: DS35304 Rev. 4 - 2 5 of 7 www.diodes.com April 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZX5T1951G Package Outline Dimensions SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm A A1 Suggested Pad Layout X1 Y1 C1 Y2 Dimensions X1 X2 Y1 Y2 C1 C2 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 C2 X2 ZX5T1951G Datasheet Number: DS35304 Rev. 4 - 2 6 of 7 www.diodes.com April 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZX5T1951G IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com ZX5T1951G Datasheet Number: DS35304 Rev. 4 - 2 7 of 7 www.diodes.com April 2011 © Diodes Incorporated