ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Pac k aged in t he SOT2 3 -6 out line t his new 5 t h generation low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT23-6 • 3.5 Amps continuous current • Extremely low saturation voltage (-70mV max @ 1A/100mA ) • Up to 10 Amps peak current • Very low saturation voltages APPLICATIONS • DC - DC converters • Battery charging • Power switches • Motor control • Power management functions PINOUT ORDERING INFORMATION REEL SIZE TAPE WIDTH QUANTITY PER REEL ZX5 T2 E6 TA 7” 8mm embossed 3,000 ZX5 T2 E6 TC 13” 8mm embossed 10,000 DEVICE DEVICE MARKING • 52 TOP VIEW ISSUE 1 - MAY 2004 1 SEMICONDUCTORS ZX5T2E6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT V Collector-base voltage BV CBO -25 Collector-emitter voltage BV CEO -20 V Emitter-base voltage BV EBO -7.5 V Continuous collector current IC -3.5 A Peak pulse current I CM -10 A Power dissipation at T A = 2 5 ° C (a) Linear derating factor PD 1.1 W 8.8 mW/° C (b) PD Power dissipation at T A = 2 5 ° C 1.7 W 13.6 mW/° C -55 to + 150 °C VALUE UNIT R⍜JA 113 ° C/W R⍜JC 73 ° C/W Linear derating factor Operating and storage temperature range T j, T stg THERMAL RESISTANCE PARAMETER SYMBOL (a) Junction to ambient Junction to ambient (b) NOTES (a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) As above measured at t< 5 seconds. ISSUE 1 - MAY 2004 SEMICONDUCTORS 2 ZX5T2E6 CHARACTERISTICS ISSUE 1 - MAY 2004 3 SEMICONDUCTORS ZX5T2E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated) PARAMETER SYMBOL Collector-base breakdown voltage BV CBO MIN. TYP. -25 -49 MAX. UNIT CONDITIONS V I C = -1 0 0 A Collector-emitter breakdown voltage BV CEO -20 -43 V I C = -1 0 mA * Emitter-base breakdown voltage BV EBO -7.5 -8.4 V I E = -1 0 0 A Collector cut-off current I CBO -100 nA V CB = -2 0 V Collector cut-off current I CES -100 nA V CB = -2 0 V Emitter cut-off current I EBO -100 nA V EB = -6 V Collector-emitter saturation voltage V CE(SAT) -10 -15 mV -100 -140 mV I C = -0 . 1 A, I B = -1 0 mA* I C = -1 A, I B = -1 0 mA* -110 -130 mV IC = -3 .5 A, IB = -3 5 0 mA* Base-emitter saturation voltage V BE(SAT) -0.96 -1.1 V IC = -3 .5 A, IB = -3 5 0 mA* Base-emitter turn-on voltage V BE(ON) -0.8 -0.9 V Static forward current transfer ratio hFE I C = -3 . 5 A, V CE = -2 V * I C = -1 0 mA, V CE = -2 V * 300 575 300 450 150 285 I C = -1 A, V CE = -2 V * I C = -3 . 5 A, V CE = -2 V * 40 I C = -1 0 A, V CE = -2 V * 10 Transition frequency 900 110 fT I C = -5 0 mA, V CE = -1 0 V f = 5 0 MHz 45 pF V CB = -1 0 V , f = 1 MHz * t ON 90 ns I C = -2 A, V CC = -1 0 V , t OFF 325 ns I B1 = I B2 = -4 0 mA Output capacitance C OBO Switching times NOTES * Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2% . ISSUE 1 - MAY 2004 SEMICONDUCTORS 4 ZX5T2E6 TYPICAL CHARACTERISTICS ISSUE 1 - MAY 2004 5 SEMICONDUCTORS ZX5T2E6 PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS DIM Millimeters Min Inches Max Min Max DIM Millimeters Min Inches Max Min Max A 0.90 1.45 0.035 0.057 E 2.20 3.20 0.0866 0.118 A1 0.00 0.15 0.00 0.006 E1 1.30 1.80 0.0511 0.071 A2 0.90 1.30 0.035 0.051 L 0.10 0.60 0.004 0.024 b 0.20 0.50 0.008 0.020 e 0.95 REF 0.037 REF C 0.09 0.26 0.003 0.010 e1 1.90 REF 0.075 REF D 2.70 3.10 0.106 0.122 ⍜ 0° 30° 0° 30° ©Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquaters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - MAY 2004 SEMICONDUCTORS 6 #