ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extemely low equivalent on-resistance; RSAT = 34m at 5A E-LINE • 4.5 amps continuous current • Up to 15 amps peak current • Very low saturation voltages APPLICATIONS • Emergency lighting circuits • Motor driving (including DC fans) • Solenoid, relay and actuator drivers • DC modules • Backlight inverters ORDERING INFORMATION DEVICE ZX5T851ASTOA ZX5T851ASTZ QUANTITY 2000 units / reel 2000 units / carton DEVICE MARKING • X5T851 PINOUT ISSUE 1 - NOVEMBER 2003 1 SEMICONDUCTORS ZX5T851A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT V Collector-base voltage BV CBO 150 Collector-emitter voltage BV CEO 60 V Emitter-base voltage BV EBO 7 V Continuous collector current (a) IC 4.5 A Peak pulse current I CM 15 A Practical power dissipation (a) PD 1.0 W Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor 8 mW/°C PD 0.71 W 5.7 mW/°C Operating and storage temperature range T j , T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to ambient (a) R ⍜JA 125 °C/W Junction to ambient (b) R ⍜JA 175 °C/W NOTES (a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Collector lead length to solder point 4mm. (b For a device mounted in a socket in still air conditions. Collector lead length 10mm. ISSUE 1 - NOVEMBER 2003 SEMICONDUCTORS 2 ZX5T851A CHARACTERISTICS ISSUE 1 - NOVEMBER 2003 3 SEMICONDUCTORS ZX5T851A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO 150 190 MAX. UNIT CONDITIONS V I C =100A I C =1A, RBⱕ1k⍀ Collector-emitter breakdown voltage BV CER 150 190 V Collector-emitter breakdown voltage BV CEO 60 80 V I C =10mA* Emitter-base breakdown voltage BV EBO 7 8.1 V I E =100A Collector cut-off current I CBO Collector cut-off current 20 nA V CB =120V 0.5 A VCB=120V, Tamb=100⬚C I CER 20 nA V CB =120V Rⱕ1k⍀ 0.5 A VCB=120V, Tamb=100⬚C V EB =6V Emitter cut-off current I EBO Collector-emitter saturation voltage V CE(SAT) 10 nA 18 30 mV I C =100mA, I B =5mA* 40 55 mV IC=1A, IB=100mA* 45 65 mV IC=1A, IB=50mA* 95 130 mV IC=2A, IB=50mA* 170 210 mV IC=5A, IB=200mA* Base-emitter saturation voltage V BE(SAT) 950 1050 mV I C =4A, I B =200mA* Base-emitter turn-on voltage V BE(ON) 840 950 mV Static forward current transfer ratio h FE I C =4A, V CE =1V* 100 200 100 200 55 105 IC=5A, VCE=1V* 20 40 IC=10A, VCE=1V* 130 I C =10mA, V CE =1V* IC=2A, VCE=1V* 300 MHz IC =100mA, VCE =10V Transition frequency fT Output capacitance C OBO 31 pF V CB =10V, f=1MHz* Switching times t ON 42 ns t OFF 760 ns I C =1A, V CC =10V, I B1 =I B2 =100mA f=50MHz * Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. ISSUE 1 - NOVEMBER 2003 SEMICONDUCTORS 4 ZX5T851A TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2003 5 SEMICONDUCTORS ZX5T851A PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 0.41 0.495 0.016 0.0195 B 0.41 0.495 0.016 0.0195 C 3.61 4.01 0.142 0.158 D 4.37 4.77 0.172 0.188 E 2.16 2.41 0.085 0.095 F — 2.50 — 0.098 G 1.27 NOM L 13.00 13.97 0.050 NOM 0.512 0.550 © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - NOVEMBER 2003 SEMICONDUCTORS 6