A Product Line of Diodes Incorporated ZXGD3006E6 40V 10A GATE DRIVER IN SOT26 Features and Benefits Description • • ZXGD3006E6 is a 40V Gate Driver for switching IGBTs and SiC MOSFETs. It can transfer up to 10A peak source/sink current into the gate for effective charging and discharging of a large capacitive load. • • The ZXGD3006E6 can drive typically 4A into the low gate impedance of an IGBT, with just 1mA input from a controller. Also, the turn-on and turn-off switching behavior of the IGBT can be individually tailored to suit an application. In particular, by defining the switching characteristics appropriately, EMI and cross conduction problems can be reduced. • • • • • High-gain buffer with typically 4A output from 1mA input 40V supply for +20V to -18V gate driving to prevent dV/dt induced false triggering Emitter-follower that is rugged to latch-up / shoot-through issues, and delivers <10ns propagation delay time Separate source and sink outputs for independent control of IGBT turn-on and turn-off times Optimized pin-out to simplify PCB layout and reduce parasitic trace inductances Near-zero quiescent supply current “Lead-Free”, RoHS Compliant (Note 1) Halogen and Antimony free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data Gate driving IGBTs and SiC MOSFETs in: • • • • • • • • • Solar inverters Power supplies Plasma display panel power modules SOT26 VCC Case: SOT26 Case material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.018 grams (approximate) Source Do Not Connect IN 1 Sink VEE Top View Pin-Out Pin Name Pin Function VCC Supply voltage high IN Driver input pin VEE Supply voltage low SOURCE Source current output SINK Sink current output Ordering Information (Note 3) Product ZXGD3006E6TA Notes: Marking 3006 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposefully added lead 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information 3006 ZXGD3006E6 Document Number DS35229 Rev. 1 – 2 3006 = Product Type Marking Code 1 of 8 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3006E6 Typical Application Circuit VS VCC + supply Controller VCC SOURCE RSOURCE IN ZXGD3006 IGBT (or SiC MOSFET) SINK RSINK VEE VEE - supply Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Supply voltage, with respect to VEE Input voltage, with respect to VEE Output difference voltage (Source – Sink) Peak output current Input current Symbol VCC VIN ΔV(source-sink) IPK IIN Value 40 40 ±7.5 ±10 ±100 Unit V V V A mA Value 1.1 8.8 113 105 -55 to +150 Unit W mW/°C Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Notes 4 & 5) Linear derating factor Thermal Resistance, Junction to Ambient (Notes 4 & 5) Thermal Resistance, Junction to Lead (Note 6) Operating and Storage Temperature Range Notes: Symbol PD RθJA RθJL TJ, TSTG °C/W °C 4. For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the pin 1 (VCC) and pin 3 (VEE) connected separately to each half. 5. For device with two active die running at equal power. 6. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (VCC) and pin 3 (VEE). ZXGD3006E6 Document Number DS35229 Rev. 1 – 2 2 of 8 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3006E6 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Output voltage, high Output voltage, low Symbol VOUT(hi) VOUT(low) Supply breakdown voltage BVCC Quiescent supply current IQ Source current Sink current I(source) I(sink) Source current with varying input resistances I(source) Min Typ Max VCC - 1.0 VCC - 0.8 VEE + 0.12 VEE + 0.3 40 40 50 50 4.0 3.8 - Unit V V nA A - 6.4 5.5 3.9 2.2 0.44 - A - A Sink current with varying input resistances I(sink) - 7.7 6.5 4.4 2.3 0.46 Switching times with low load capacitance CL = 10nF td(rise) tr td(fall) tf - 8 48 16 35 - ns Switching times with high load capacitance CL = 100nF td(rise) tr td(fall) tf - 46 419 47 467 - ns Switching times with asymmetric source and sink resistors td(rise) tr td(fall) tf - 27 208 11 53 - ns Test Condition VIN = VCC CL = 1nF RSOURCE = 0Ω, RSINK = 0Ω VIN = VEE IQ = 100μA, VIN = VCC IQ = 100μA, VIN = VEE = 0V VCC = 30V, VIN = VCC VCC= 30V, VIN = VEE = 0V VCC= 5V, IIN= 1mA, VOUT= 0V VCC= 5V, IIN=-1mA, VOUT= 5V RIN = 200Ω VCC = 15V, VEE = 0V RIN = 1kΩ VIN = 15V RIN = 10kΩ CL = 100nF, RL = 0.18Ω RIN = 100kΩ RSOURCE = 0Ω, RSINK = 0Ω RIN = 1000kΩ RIN = 200Ω VCC = 15V, VEE = 0V RIN = 1kΩ VIN = 15V RIN = 10kΩ CL = 100nF, RL = 0.18Ω RIN = 100kΩ RSOURCE = 0Ω, RSINK = 0Ω RIN = 1000kΩ VCC = 15V, VEE = 0V VIN = 0 to 15V RIN = 1kΩ CL = 10nF, RL = 0.18Ω RSOURCE = 0 Ω, RSINK = 0 Ω VCC = 15V, VEE = 0V VIN = 0 to15V RIN = 1kΩ CL = 100nF, RL = 0.18Ω RSOURCE = 0Ω, RSINK = 0Ω VCC = 20V, VEE = -18V VIN = -18 to 20V RIN= 1kΩ CL = 10nF, RL = 0.18Ω RSOURCE = 4.7Ω, RSINK = 0Ω Switching Test Circuit and Timing Diagram VCC 90% VCC VIN RIN 50Ω SOURCE IN ZXGD3006 V RSOURCE 10% SINK td(fall) td(rise) RSINK 50Ω VIN VOUT CL 90% VEE RL 90% VOUT 10% 10% tr ZXGD3006E6 Document Number DS35229 Rev. 1 – 2 3 of 8 www.diodes.com tf June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3006E6 Typical Switching Characteristics @TA = 25°C unless otherwise specified VIN = 0 to 15V 15 VIN = 0 to 15V 15 VCC= 15V VCC= 15V VEE= 0V RIN = 1kΩ 10 CL = 10nF RL = 0.18Ω VOUT RSOURCE= 0Ω 5 RSINK = 0Ω VIN Voltage (V) Voltage (V) VEE= 0V RIN = 1kΩ 10 CL = 100nF RL = 0.18Ω VOUT RSOURCE= 0Ω 5 RSINK = 0Ω VIN 0 0 0 0.0 100 200 300 400 500 600 700 800 0.5 1.0 1.5 2.0 2.5 Time (μs) Time (ns) 3.0 3.5 Switching Speed Switching Speed High Load Capacitance CL = 100nF Low Load Capacitance CL = 10nF 10 20 VCC= 20V Voltage (V) 15 VEE= -18V 10 RIN = 1kΩ VOUT 5 CL = 10nF RL = 0.18Ω 0 RSOURCE= 4.7Ω -5 RSINK = 0Ω VIN -10 Supply Current (A) VIN = -18 to 20V VIN = 0 to 15V 1 CL= 100nF VCC= 15V VEE= 0V 0.1 0.01 Square Wave CL= 1μF CL= 1nF 1E-3 -15 -20 CL= 10nF 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1E-4 10 100 1k 10k 100k Time (μs) Frequency (Hz) Switching Speed Supply Current 1M Asymmetric Source and Sink Resistors ZXGD3006E6 Document Number DS35229 Rev. 1 – 2 4 of 8 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3006E6 Typical Switching Characteristics @TA = 25°C unless otherwise specified 10 Peak Sink Current (A) Peak Source Current (A) 10 CL=1uF 1 CL=100nF VIN = 15V 0.1 CL=10nF VCC= 15V VEE= 0V RL = 0.18Ω CL=1nF 0.01 1k 10k 100k 1M CL=1uF 1 CL=100nF VIN = 15V 0.1 VEE= 0V RL = 0.18Ω 10M 1k 1M 10M RIN=1MΩ 1000 RIN=100kΩ td(fall) (ns) td(rise) (ns) 100k Sink Current vs. Input Resistance RIN=1MΩ 100 RIN=100kΩ 100 10 RIN=200Ω 1 RIN=1kΩ RIN=10kΩ V == 15V VIN 15V IN V VCC== 15V 15V VIN = 15V 10 CC V == 0V VEE 0V EE R RL == 0.18 0.18Ω Ω RIN=200Ω L 10 100 1 1k 1 CL Load Capacitance (nF) 10000 RIN=100kΩ 1000 RIN=10kΩ 100 VIN = 15V RIN=200Ω 10 1 tf (ns) 1000 10 RIN=1kΩ VCC= 15V RIN=10kΩ VEE= 0V RL = 0.18Ω 10 100 1k Turn-Off Delay Time RIN=1MΩ 10000 RIN=1kΩ CL Load Capacitance (nF) Turn-On Delay Time tr (ns) 10k RIN Input Resistance (Ω) Source Current vs. Input Resistance 1 CL=1nF 0.01 RIN Input Resistance (Ω) 1000 CL=10nF VCC= 15V RIN=1MΩ RIN=100kΩ 100 RIN=10kΩ VIN = 15V VCC= 15V RIN=1kΩ VEE= 0V 10 RL = 0.18Ω 100 1k 1 RIN=200Ω 10 VCC= 15V VEE= 0V RL = 0.18Ω 100 CL Load Capacitance (nF) CL Load Capacitance (nF) Turn-On Rise Time Turn-Off Fall Time ZXGD3006E6 Document Number DS35229 Rev. 1 – 2 5 of 8 www.diodes.com 1k June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3006E6 Circuit Examples ZXGD3006 driving a MOSFET ZXGD3006 driving an IGBT Application example of ZXGD3006 driving the gate of an IGBT with independent ton and toff using asymmetric RSOURCE and RSINK In addition, the gate is driven negative to -18V to prevent dV/dt induced false triggering. Application example of the ZXGD3006 driving the gate of a MOSFET from 0 to +15V with RSOURCE = RSINK = 0Ω Switching Time Characteristic Switching Time Characteristic VIN = 0 to 15V 15 VCC= 15V Voltage (V) Voltage (V) RIN = 1kΩ CL = 10nF RL = 0.18Ω VOUT RSOURCE= 0Ω 5 RSINK = 0Ω VIN VCC= 20V 15 VEE= 0V 10 VIN = -18 to 20V 20 VEE= -18V RIN = 1kΩ 10 VOUT 5 CL = 10nF RL = 0.18Ω 0 RSOURCE= 4.7Ω -5 RSINK = 0Ω VIN -10 -15 0 0 100 200 300 400 500 600 700 800 -20 Symmetric Source and Sink Resistors ZXGD3006E6 Document Number DS35229 Rev. 1 – 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Time (μs) Time (ns) Asymmetric Source and Sink Resistors 6 of 8 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3006E6 Package Outline Dimensions A B C H K M J L D SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X ZXGD3006E6 Document Number DS35229 Rev. 1 – 2 7 of 8 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3006E6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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