ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.20V; ID=-2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL Top View ZXM62P02E6TA 7 8mm embossed 3000 units ZXM62P02E6TC 13 8mm embossed 10000 units DEVICE MARKING • 2P02 ISSUE 1 - JUNE 2004 1 ZXM62P02E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS -20 V Gate- Source Voltage V GS ± 12 V Continuous Drain Current (V GS=-4.5V; T A=25°C)(b) (V GS=-4.5V; T A=70°C)(b) ID -2.3 -1.7 A Pulsed Drain Current (c) I DM -13 A Continuous Source Current (Body Diode)(b) IS -1.9 A I SM -13 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 1.7 13.6 W mW/°C Operating and Storage Temperature Range T j:T stg -55 to +150 °C VALUE UNIT Pulsed Source Current (Body Diode)(c) LIMIT UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 73 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 1 - JUNE 2004 2 ZXM62P02E6 Max Power Dissipation (Watts) CHARACTERISTICS 100 -ID - Drain Current (A) Refer Note (a) 10 1 0.1 DC 1s 100ms 10ms 1ms 100µs 0.1 10 1 100 Refer Note (a) 0.5 0 0 20 40 80 60 100 120 Safe Operating Area Derating Curve 160 140 120 Thermal Resistance (°C/W) Thermal Resistance (°C/W) Refer Note (b) 1 T - Temperature (° ) Refer Note (b) 60 20 1.5 -VDS - Drain-Source Voltage (V) 80 40 2 D=0.5 D=0.2 D=0.1 D=0.05 0 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Refer Note (a) 100 80 60 D=0.5 40 D=0.2 20 D=0.1 D=0.05 Single Pulse 0 0.0001 0.001 0.01 100 0.1 1 10 100 1000 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance ISSUE 1 - JUNE 2004 3 ZXM62P02E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs -20 V I D=-250µA, V GS=0V -1 µA V DS=-20V, V GS=0V ±100 nA V GS=± 12V, V DS=0V V I D =-250µA, V DS= V GS Ω Ω V GS=-4.5V, I D=-1.6A V GS=-2.7V, I D=-0.8A S V DS=-10V,I D=-0.8A -0.7 0.2 0.375 1.5 DYNAMIC (3) Input Capacitance C iss 320 pF Output Capacitance C oss 150 pF Reverse Transfer Capacitance C rss 75 pF Turn-On Delay Time t d(on) 4.1 ns Rise Time tr 15.4 ns Turn-Off Delay Time t d(off) 12.0 ns Fall Time tf 19.2 Total Gate Charge Qg 5.8 nC Gate-Source Charge Q gs 1.25 nC Gate Drain Charge Q gd 2.8 nC Diode Forward Voltage (1) V SD -0.95 V T j=25°C, I S=-1.6A, V GS=0V Reverse Recovery Time (3) t rr 22.5 ns T j=25°C, I F=-1.6A, di/dt= 100A/µs Reverse Recovery Charge(3) Q rr 10.4 nC V DS=-15 V, V GS=0V, f=1MHz SWITCHING(2) (3) V DD =-10V, I D=-1.6A R G=6.0Ω, R D=6.1Ω (Refer to test circuit) ns V DS=-16V,V GS=-4.5V, I D =-1.6A (Refer to test circuit) SOURCE-DRAIN DIODE (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - JUNE 2004 4 ZXM62P02E6 TYPICAL CHARACTERISTICS 100 100 +150°C 5V -VGS 4.5V 10 -ID - Drain Current (A) -ID - Drain Current (A) +25°C 4V 3.5V 3V 2.5V 1 0.1 2V 0.1 1 Normalised RDS(on) and VGS(th) -ID - Drain Current (A) 100 T=150°C T=25°C 1.5 2 2.5 3 3.5 4 4.5 5 1.6 RDS(on) 1.4 VGS=-4.5V ID=-1.6A 1.2 1.0 VGS=VDS ID=-250µA 0.8 VGS(th) 0.6 0.4 -100 -50 0 50 100 150 200 Tj - Junction Temperature (°C) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) v Temperature 10 100 -ISD - Reverse Drain Current (A) RDS(on) - Drain-Source On-Resistance (Ω ) 10 Output Characteristics -VGS - Gate-Source Voltage (V) 1 VGS=-3V VGS=-5V 0.1 1 0.1 Output Characteristics 10 1 2V 1 -VDS - Drain-Source Voltage (V) VDS=-10V 0.1 -VGS 4V 3.5V 3V -VDS - Drain-Source Voltage (V) 100 1 4.5V 2.5V 0.1 100 10 5V 10 0.1 1 10 100 -ID - Drain Current (A) On-Resistance v Drain Current 10 1 T=150°C T=25°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD - Source-Drain Voltage (V) Source-Drain Diode Forward Voltage ISSUE 1 - JUNE 2004 5 ZXM62P02E6 C - Capacitance (pF) 700 -VGS - Gate-Source Voltage (V) TYPICAL CHARACTERISTICS Vgs=0V f=1Mhz 600 500 Ciss Coss Crss 400 300 200 100 0 1 0.1 10 100 5 ID=-1.6A 4.5 4 VDS=-16V 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VDS - Drain Source Voltage (V) Q - Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit ISSUE 1 - JUNE 2004 6 ZXM62P02E6 PACKAGE DIMENSIONS b PAD LAYOUT DETAILS e L 2 E1 E DATUM A a e1 D C A A2 DIM A1 Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF e1 1.90 REF L 0° 0.037 REF 0.074 REF 10° 0° 10° Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - JUNE 2004 7