DIODES ZXMC10A816N8

A Product Line of
Diodes Incorporated
ZXMC10A816N8
100V SO8 Complementary Dual enhancement mode
MOSFET
Summary
Device
V(BR)DSS (V)
Q1
Q2
QG (nC)
100
RDS(on) (Ω
Ω)
ID (A)
TA= 25°°C
0.230 @ VGS= 10V
2.1
0.300 @ VGS= 4.5V
1.9
0.235 @ VGS= -10V
-2.2
0.320 @ VGS= -4.5V
-1.9
9.2
-100
16.5
Description
D1
This new generation complementary dual MOSFET
features low on-resistance achievable with low gate drive.
Features
•
•
•
•
D2
G1
100 V Complementary in SOIC package
Low on-resistance
Fast switching speed
Low voltage (VGS = 4.5 V) gate drive
G2
S1
S2
Q1 N-Channel
Q2 P-Channel
Applications
•
DC motor control
•
Backlighting
•
Class D Audio Output Stages (<100W)
Ordering information
Device
ZXMC10A816N8TC
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
13
12
2,500
S1
D1
G1
D1
S2
D2
G2
D2
Top view
Device marking
ZXMC
10A816
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ZXMC10A816N8
Absolute maximum ratings
Parameter
Symbol
Nchannel
Q1
Pchannel
Q2
Unit
Drain-Source voltage
VDSS
100
-100
V
Gate-Source voltage
VGS
±20
±20
V
ID
2.1
-2.2
A
(b)(d)
1.7
-1.8
(a)(d)
1.7
-1.7
2.0
-2.0
2.3
-2.4
IDM
9.4
-10.5
A
IS
3.0
-3.1
A
ISM
9.4
-10.5
A
(b)(d)
Continuous Drain current @ VGS= 10V; TA=25°C
@ VGS= 10V; TA=70°C
@ VGS= 10V; TA=25°C
@ VGS= 10V; TA=25°C
(a)(e)
(f)(d)
@ VGS= 10V; TL=25°C
Pulsed Drain current @ VGS= 10V; TA=25°C
(c)(d)
Continuous Source current (Body diode) at TA =25°C
Pulsed Source current (Body diode) at TA =25°C
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TL =25°C
Linear derating factor
(b)(d)
(c)(d)
(a)(d)
(a)(e)
(b)(d)
(f)(d)
PD
1.3
10.0
W
mW/°C
PD
1.8
14.2
W
mW/°C
PD
2.1
16.7
W
mW/°C
PD
Operating and storage temperature range
2.6
2.4
18.9
20.4
W
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Value
Unit
RθJA
100
°C/W
RθJA
70
°C/W
RθJA
60
°C/W
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to ambient
Junction to lead
(a)(d)
(a)(e)
(b)(d)
(f)(d)
RθJL
53
49
°C/W
NOTES:
(a)
(b)
(c)
(d)
(e)
(f)
For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions; the device is measured when operating in a steady-state condition.
Same as note (a), except the device is measured at t ≤ 10 sec.
Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the
maximum junction temperature.
For a dual device with one active die.
For a device with two active die running at equal power.
Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state
condition.
Issue 1.3 - March 2009
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ZXMC10A816N8
Thermal characteristics
10
10
Limited
-ID Drain Current (A)
ID Drain Current (A)
RDS(ON)
1
DC
1s
100m
10m
10ms
1ms
1
DC
1s
1
10
100ms
1ms
Single Pulse, T amb=25°C
0.1
100
10ms
Note (a)(d)
10m
100us
Single Pulse, T amb=25°C
0.1
Limited
100m
100ms
Note (a)(d)
RDS(ON)
VDS Drain-Source Voltage (V)
1
100us
10
100
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
80
60
D=0.5
40
Single Pulse
D=0.2
20
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
1.5
Two active die
One active die
1.0
0.5
0.0
0
25
50
75
100
125
150
Temperature (°C)
Transient Thermal Impedance
Maximum Power (W)
Max Power Dissipation (W)
Thermal Resistance (°C/W)
2.0
100
Derating Curve
Single Pulse
T amb=25°C
100
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
Issue 1.3 - March 2009
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ZXMC10A816N8
Q1 (N-channel) electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Drain-Source breakdown
voltage
V(BR)DSS
100
Zero Gate voltage Drain
current
IDSS
IGSS
Typ.
Max.
Unit
Conditions
Static
Gate-Body leakage
Gate-Source threshold
voltage
VGS(th)
1.0
V
ID = 250µA, VGS= 0V
0.5
µA
VDS= 100V, VGS= 0V
100
nA
VGS= ±20V, VDS= 0V
3.0
V
ID= 250µA, VDS= VGS
0.230
0.300
Ω
VGS= 10V, ID= 1.0A
VGS= 4.5V, ID= 0.5A
VDS= 15V, ID= 1.6A
Static Drain-Source
(a)
on-state resistance
RDS(on)
Forward
(a) (c)
Transconductance
gfs
4.8
S
Input capacitance
Ciss
497
pF
Output capacitance
Coss
29
pF
Reverse transfer
capacitance
Crss
18
pF
Turn-on-delay time
td(on)
2.9
ns
Rise time
tr
2.1
ns
Turn-off delay time
td(off)
12.1
ns
Fall time
tf
5.0
ns
Total Gate charge
Qg
9.2
nC
Gate-Source charge
Qgs
1.7
nC
Gate-Drain charge
Qgd
2.5
nC
VSD
0.85
0.170
0.210
Dynamic
Capacitance
Switching
(c)
VDS= 50V, VGS= 0V
f= 1MHz
(b) (c)
Gate charge
VDD= 50V, VGS= 10V
ID= 1.0A
RG ≅ 6.0Ω,
(c)
VDS= 50V, VGS= 10V
ID= 1.6A
Source–Drain diode
Diode forward voltage
(a)
Reverse recovery time
(c)
Reverse recovery charge
(c)
0.95
V
trr
32
ns
Qrr
40
nC
IS= 1.7A, VGS= 0V
IS= 1.7A, di/dt= 100A/µs
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
Issue 1.3 - March 2009
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ZXMC10A816N8
Q1 (N-channel) typical characteristics
10V
T = 25°C
10
5V
ID Drain Current (A)
4.5V
4V
1
3.5V
0.1
VGS
3V
0.01
ID Drain Current (A)
10
5V
10V
T = 150°C
4.5V
4V
3.5V
1
3V
VGS
0.1
2.5V
0.01
0.1
1
10
0.1
1
10
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
2.2
T = 150°C
1
T = 25°C
0.1
VDS = 10V
0.01
2.0
2.5
3.0
3.5
4.0
VGS = 10V
ID = 1.6A
2.0
1.8
RDS(on)
1.6
1.4
1.2
1.0
VGS(th)
0.8
VGS = VDS
ID = 250uA
0.6
0.4
-50
4.5
VGS Gate-Source Voltage (V)
0
50
100
150
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
3V
T = 25°C
VGS
3.5V
4V
1
4.5V
5V
10V
0.1
0.01
0.1
1
10
On-Resistance v Drain Current
© Diodes Incorporated 2009
T = 150°C
1
T = 25°C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ID Drain Current (A)
Issue 1.3 - March 2009
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
10
10
5
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ZXMC10A816N8
Q1 (N-channel) typical characteristics –continued
10
VGS = 0V
f = 1MHz
C Capacitance (pF)
600
500
CISS
400
300
COSS
200
CRSS
100
0
0.1
1
10
100
VDS - Drain - Source Voltage (V)
VGS Gate-Source Voltage (V)
700
ID = 1.6A
8
6
4
2
VDS = 50V
0
0
2
4
6
8
10
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Test circuits
Current
regulator
QG
12V
VG
QGS
50k
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
Issue 1.3 - March 2009
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Switching time test circuit
6
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ZXMC10A816N8
Q1 (P-channel) electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Drain-Source breakdown
voltage
V(BR)DSS
-100
Zero Gate voltage Drain
current
IDSS
IGSS
Typ.
Max.
Unit
Conditions
Static
Gate-Body leakage
Gate-Source threshold
voltage
VGS(th)
-2.0
V
ID = -250µA, VGS= 0V
-0.5
µA
VDS= -100V, VGS= 0V
100
nA
VGS= ±20V, VDS= 0V
-4.0
V
ID= -250µA, VDS= VGS
0.235
0.320
Ω
VGS= -10V, ID= -1.0A
VGS= -4.5V, ID= -0.5A
VDS= -15V, ID= -2.1A
Static Drain-Source
(a)
on-state resistance
RDS(on)
Forward
(a) (c)
Transconductance
gfs
4.7
S
Input capacitance
Ciss
717
pF
Output capacitance
Coss
55
pF
Reverse transfer
capacitance
Crss
46
pF
Turn-on-delay time
td(on)
4.3
ns
Rise time
tr
5.2
ns
Turn-off delay time
td(off)
20
ns
Fall time
tf
12
ns
0.170
0.250
Dynamic
Capacitance
Switching
(c)
VDS= -50V, VGS= 0V
f= 1MHz
(b) (c)
Gate charge
VDD= -50V, VGS= -10V
ID= -1A
RG ≅ 6.0Ω,
(c)
Total Gate charge
Qg
16.5
nC
Gate-Source charge
Qgs
2.5
nC
Gate-Drain charge
Qgd
5.4
nC
VSD
-0.85
VDS= -50V, VGS= -10V
ID= -2.1A
Source–Drain diode
Diode forward voltage
(a)
Reverse recovery time
(c)
Reverse recovery charge
(c)
-0.95
V
trr
43
ns
Qrr
77
nC
IS= -1.7A, VGS= 0V
IS= -1.7A, di/dt= 100A/µs
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
Issue 1.3 - March 2009
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ZXMC10A816N8
Q2 (P-channel) typical characteristics
10V
T = 25°C
10
5V
-ID Drain Current (A)
-ID Drain Current (A)
10
4.5V
4V
1
3.5V
0.1
-VGS
10V
T = 150°C
5V
4.5V
4V
1
3.5V
3V
0.1
-VGS
0.01
0.1
1
10
0.1
-VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
Normalised RDS(on) and VGS(th)
-ID Drain Current (A)
2.0
T = 150°C
T = 25°C
1
-VDS = 10V
3.0
3.5
4.0
4.5
5.0
1.2
1.0
VGS = VDS
0.6
ID = -250uA
-ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
4.5V
5V
1
7V
10V
1
100
150
1
T = 150°C
0.1
T = 25°C
0.01
0.4
0.6
0.8
1.0
-VSD Source-Drain Voltage (V)
On-Resistance v Drain Current
© Diodes Incorporated 2009
50
10
1E-3
0.2
10
-ID Drain Current (A)
Issue 1.3 - March 2009
0
Normalised Curves v Temperature
4V
0.1
0.1
VGS(th)
0.8
Tj Junction Temperature (°C)
T = 25°C
10
RDS(on)
1.4
-50
Typical Transfer Characteristics
3.5V
ID = - 2.1A
1.6
-VGS Gate-Source Voltage (V)
-VGS
VGS = -10V
1.8
Source-Drain Diode Forward Voltage
8
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ZXMC10A816N8
Q2 (P-channel) typical characteristics –continued
C Capacitance (pF)
-VGS Gate-Source Voltage (V)
10
1000
VGS = 0V
f = 1MHz
800
CISS
600
COSS
400
CRSS
200
0
0.1
1
10
100
-VDS - Drain - Source Voltage (V)
ID = -2.1A
8
6
4
2
VDS = -50V
0
0
2
4
6
8
10
12
14
16
18
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Test circuits
Current
regulator
QG
12V
VG
QGS
50k
0.2mF
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
tr
td(off)
t(on)
tr
t(on)
Switching time waveforms
Issue 1.3 - March 2009
© Diodes Incorporated 2009
Pulse width , 1mS
Duty factor 0.1%
td(on)
Switching time test circuit
9
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ZXMC10A816N8
Packaging details - SO8
DIM
Inches
Millimeters
DIM
Inches
Min.
Millimeters
Min.
Max.
Min.
Max.
Max.
Min.
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
θ
0°
8°
0°
8°
E
0.150
0.157
3.80
4.00
-
-
-
-
-
L
0.016
0.050
0.40
1.27
-
-
-
-
-
0.050 BSC
Max.
1.27 BSC
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Issue 1.3 - March 2009
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ZXMC10A816N8
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
Life support devices or systems are devices or systems which:
1.
are intended to implant into the body, or
2.
support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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