ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary Device V(BR)DSS (V) QG (nC) RDS(on) (Ω) ID (A) Q1 30 12.9 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.045 @ VGS= -10V 5.3 0.080 @ VGS= -4.5V 4 Q2 -30 12.7 Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for power management and battery charging functions. Features • • • Low on-resistance 4.5V gate drive capability Low profile SOIC package D1 Applications D2 G2 G1 • DC-DC Converters • SMPS • Load switching switches • Motor control • Backlighting S2 S1 Q1 N-Channel Q2 P-Channel Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 12 500 ZXMC3F31DN8TA S1 G1 Device marking S2 ZXMC 3F31 G2 D1 N D1 D2 P D2 Top view Issue 1 - September 2008 © Diodes Incorporated 2008 1 www.zetex.com www.diodes.com ZXMC3F31DN8 Absolute maximum ratings Parameter Symbol Nchannel Q1 Pchannel Q2 Unit Drain-Source voltage VDSS 30 -30 V Gate-Source voltage VGS ±20 ±20 V ID A Continuous Drain current @ VGS= 10V; TA=25°C @ VGS= 10V; TA=70°C @ VGS= 10V; TA=25°C @ VGS= 10V; TA=25°C @ VGS= 10V; TL=25°C Pulsed Drain current (b)(d) 7.3 5.3 (b)(d) 5.9 4.3 (a)(d) 5.7 4.1 (a)(e) 6.8 4.9 7.8 5.7 IDM 33 23 A IS 3.5 3.2 A ISM 33 23 A (f)(d) (c) Continuous Source current (Body diode) Pulsed Source current (Body diode) Power dissipation at TA =25°C Linear derating factor Power dissipation at TA =25°C Linear derating factor Power dissipation at TA =25°C Linear derating factor Power dissipation at TL =25°C Linear derating factor (b)(d) (c)(d) (a)(d) (a)(e) (b)(d) (f) (d) Operating and storage temperature range PD 1.25 10 W mW/°C PD 1.8 14 W mW/°C PD 2.1 17 W mW/°C PD 2.35 19 W mW/°C Tj, Tstg -55 to 150 °C Symbol Value Unit RθJA 100 °C/W RθJA 70 °C/W RθJA 60 °C/W RθJL 53 °C/W Thermal resistance Parameter Junction to ambient Junction to ambient Junction to ambient Junction to lead (a)(d) (a)(e) (b)(d) (f) (d) NOTES: (a) (b) (c) (d) (e) (f) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. Mounted on FR4 PCB measured at t ≤ 10 sec. Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. For a device with one active die. For a device with two active die running at equal power. Thermal resistance from junction to solder-point (at the end of the drain lead). Issue 1 - September 2008 © Diodes Incorporated 2008 2 www.zetex.com www.diodes.com ZXMC3F31DN8 Thermal characteristics RDS(ON) -ID Drain Current (A) ID Drain Current (A) RDS(ON) 10 Limited DC 1 1s 100ms 100m 10m 1ms 100us 1 DC 1s 100ms 1 1ms 100us PNP @ Single Pulse, T amb=25°C 0.1 10 10ms Note (a)(d) 10m NPN @ Single Pulse, Tamb=25°C 0.1 Limited 100m 10ms Note (a)(d) 10 VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) N-channel Safe Operating Area P-channel Safe Operating Area 80 60 D=0.5 40 Single Pulse D=0.2 20 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 2.0 100 Pulse Width (s) Two active die One active die 1.0 0.5 0.0 0 25 50 75 100 125 150 Temperature (°C) Transient Thermal Impedance Maximum Power (W) 1.5 Derating Curve Single Pulse T amb=25°C 100 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation Issue 1 - September 2008 © Diodes Incorporated 2008 3 www.zetex.com www.diodes.com ZXMC3F31DN8 Q1 N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Static Symbol Min. Drain-Source breakdown voltage V(BR)DSS 30 Zero Gate voltage Drain current IDSS Gate-Body leakage IGSS Gate-Source threshold voltage VGS(th) Static Drain-Source ( ) on-state resistance * RDS(on) Forward ( ) (†) Transconductance * gfs Input capacitance Typ. Max. Unit Conditions V ID = 250μA, VGS=0V 0.5 µA VDS=30V, VGS=0V 100 nA VGS=±20V, VDS=0V 3.0 V ID= 250μA, VDS=VGS 0.024 0.039 Ω VGS= 10V, ID= 7.0A VGS= 4.5, ID= 6.0A 16.5 S VDS= 15V, ID= 7.0A Ciss 608 pF Output capacitance Coss 132 pF Reverse transfer capacitance Crss 72 pF Turn-on-delay time td(on) 2.9 ns Rise time tr 3.3 ns VDD= 15V, VGS=10V Turn-off delay time td(off) 16 ns Fall time tf 8 ns ID= 1A RG ≅ 6.0Ω, Total Gate charge Qg 12.9 nC Gate-Source charge Qgs 2.5 nC Gate-Drain charge Qgd 2.52 nC * VSD 0.82 (‡) trr 12 ns Qrr 4.8 nC Dynamic 1.0 (†) Switching VDS= 15V, VGS=0V f=1MHz (‡) (†) VDS= 15V, VGS= 10V ID= 7A Source–Drain diode Diode forward voltage ( ) Reverse recovery time Reverse recovery charge (‡) 1.2 V IS= 1.7A,VGS=0V IS= 2.2A,di/dt=100A/μs NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing Issue 1 - September 2008 © Diodes Incorporated 2008 4 www.zetex.com www.diodes.com ZXMC3F31DN8 Q1 Typical characteristics 5V ID Drain Current (A) T = 150°C 4V 3.5V 3V 1 0.1 2.5V VGS T = 25°C 10V VGS 4V 3.5V 10 ID Drain Current (A) 10V 10 3V 2.5V 1 2V 0.1 1.5V 0.01 0.01 0.1 1 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics ID Drain Current (A) VDS = 10V T = 150°C 1 T = 25°C 0.1 2 3 4 VGS Gate-Source Voltage (V) 1000 2.5V VGS T = 25°C 100 3V 10 3.5V 1 4V 0.1 0.01 0.01 4.5V 10V 0.1 1 10 On-Resistance v Drain Current © Diodes Incorporated 2008 ID = 7A RDS(on) 1.2 1.0 0.8 VGS(th) VGS = VDS 0.6 0.4 -50 ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 10 1 T = 150°C 0.1 T = 25°C 0.01 Vgs = -3V 1E-3 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage ID Drain Current (A) Issue 1 - September 2008 VGS = 10V 1.4 Normalised Curves v Temperature ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (W) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) 1.6 10 5 www.zetex.com www.diodes.com ZXMC3F31DN8 Q1 Typical characteristics –cntd. VGS = 0V C Capacitance (pF) 800 f = 1MHz 700 600 500 CISS COSS 400 CRSS 300 200 100 0 1 10 VGS Gate-Source Voltage (V) 900 10 9 8 7 6 5 4 3 2 1 0 ID = 7A VDS = 15V 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Q - Charge (nC) VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Test circuits Issue 1 - September 2008 © Diodes Incorporated 2008 6 www.zetex.com www.diodes.com ZXMC3F31DN8 Q2 P-channel electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Static Symbol Min. Drain-Source breakdown voltage V(BR)DSS -30 Zero Gate voltage Drain current IDSS Gate-Body leakage IGSS Gate-Source threshold voltage VGS(th) Static Drain-Source ( ) on-state resistance * RDS(on) Forward ( ) (†) Transconductance * gfs Input capacitance Typ. Max. Unit Conditions V ID = -250μA, VGS=0V -5.0 µA VDS=-30V, VGS=0V -100 nA VGS=±20V, VDS=0V -3.0 V ID= -250μA, VDS=VGS 0.045 0.080 Ω VGS= -10V, ID= -5.0A VGS= -4.5V, ID= -4.0A 14 S VDS= -15V, ID= -5.0A Ciss 670 pF Output capacitance Coss 126 pF Reverse transfer capacitance Crss 70 pF Turn-on-delay time td(on) 1.9 ns Rise time tr 3 ns VDD= -15V, VGS=-10V Turn-off delay time td(off) 30 ns Fall time tf 21 ns ID= -1A RG ≅ 6.0Ω, Total Gate charge Qg 12.7 nC Gate-Source charge Qgs 2 nC Gate-Drain charge Qgd 2.4 nC * VSD -0.82 (‡) trr 16.5 ns Qrr 11.5 nC Dynamic -1.0 (†) Switching VDS= -15V, VGS=0V f=1MHz (‡) (†) VDS= -15V, VGS= -10V ID= -5A Source–Drain diode Diode forward voltage ( ) Reverse recovery time Reverse recovery charge (‡) -1.2 V IS= -2A,VGS=0V IS= -2.1A,di/dt=100A/μs NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing Issue 1 - September 2008 © Diodes Incorporated 2008 7 www.zetex.com www.diodes.com ZXMC3F31DN8 Typical characteristics -ID Drain Current (A) 4.5V 4V 10V T = 150°C -ID Drain Current (A) 10V T = 25°C 10 3.5V 3V 1 2.5V 0.1 VGS 0.01 3V 2.5V 2V 1 VGS 1 10 0.1 -VDS Drain-Source Voltage (V) 1 Output Characteristics T = 25°C 2.5 3.0 3.5 -VGS Gate-Source Voltage (V) RDS(on) Drain-Source On-Resistance (Ω) Typical Transfer Characteristics 2.5V VGS T = 25°C 10 3V 3.5V 1 4V 4.5V 0.1 10V 0.01 0.01 0.1 1 10 -ID Drain Current (A) On-Resistance v Drain Current Issue 1 - September 2008 © Diodes Incorporated 2008 VGS = 10V ID = 5A 1.4 RDS(on) 1.2 1.0 0.8 VGS = VDS 0.6 0.4 -50 ID = 250uA 0 50 VGS(th) 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature -ISD Reverse Drain Current (A) -ID Drain Current (A) T = 150°C Normalised RDS(on) and VGS(th) 1.6 VDS = 10V 1 10 -VDS Drain-Source Voltage (V) Output Characteristics 0.1 2.0 3.5V 10 0.1 0.1 10 4V 10 T = 150°C 1 0.1 T = 25°C 0.01 Vgs = 0V 1E-3 0.2 0.4 0.6 0.8 1.0 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 8 www.zetex.com www.diodes.com ZXMC3F31DN8 Typical characteristics C Capacitance (pF) VGS = 0V 800 600 f = 1MHz CISS COSS CRSS 400 200 0 1 10 -VGS Gate-Source Voltage (V) 1000 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 10 9 8 7 6 5 4 3 2 1 0 ID = 5A VDS = 15V 0 5 10 Q - Charge (nC) 15 Gate-Source Voltage v Gate Charge Test circuits Issue 1 - September 2008 © Diodes Incorporated 2008 9 www.zetex.com www.diodes.com ZXMC3F31DN8 Package outline SO8 SO8 Package Information DIM Inches Millimeters DIM Inches Min. Millimeters Min. Max. Min. Max. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 U 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. 1.27 BSC Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 1 - September 2008 © Diodes Incorporated 2008 10 www.zetex.com www.diodes.com ZXMC3F31DN8 Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office. Quality of product Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Diodes Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: “Preview” Future device intended for production at some point. Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Diodes Zetex sales offices Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Diodes Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Diodes Incorporated 15660 N. Dallas Parkway Suite 850, Dallas TX75248, USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (1) 972 385 2810 www.diodes.com © 2008 Published by Diodes Incorporated Issue 1 - September 2008 © Diodes Incorporated 2008 11 www.zetex.com www.diodes.com