ZETEX ZXMD65P03N8

ZXMD65P03N8
DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS=-30V; RDS(ON)=0.055⍀
D=-4.8A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SO8
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
TAPE WIDTH
QUANTITY
PER REEL
ZXMD65P03N8TA
7”
12mm
500 units
ZXMD65P03N8TC
13”
12mm
2500 units
Top View
DEVICE MARKING
•
ZXMD
65P03
PROVISIONAL ISSUE A - MAY 2001
33
ZXMD65P03N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
LIMIT
UNIT
-30
V
Gate- Source Voltage
V GS
±20
V
Continuous Drain Current V GS =-10V; T A =25°C (b)(d)
V GS =-10V; T A =70°C (b)(d)
V GS =-10V; T A =25°C (a)(d)
ID
-4.8
-3.8
-3.8
A
Pulsed Drain Current (c)(d)
I DM
-18
A
Continuous Source Current (Body Diode)(b)(d)
IS
-3.0
A
Pulsed Source Current (Body Diode)(c)(d)
I SM
-18
A
Power Dissipation at T A =25°C (a)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Power Dissipation at T A =25°C (a)(e)
Linear Derating Factor
PD
1.75
14
W
mW/°C
Power Dissipation at T A =25°C (b)(d)
Linear Derating Factor
PD
2.0
16
W
mW/°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R θJA
100
°C/W
Junction to Ambient (a)(e)
R θJA
71.4
°C/W
Junction to Ambient (b)(d)
R θJA
62.5
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum
junction temperature.
(d) For device with one active die.
(e) For device with two active die running at equal power.
PROVISIONAL ISSUE A - MAY 2001
ZXMD65P03N8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNI CONDITIONS.
T
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State Resistance
(1)
R DS(on)
Forward Transconductance (1)(3)
g fs
Input Capacitance
-30
V
I D =-250µA, V GS =0V
-1
µA
V DS =-24V, V GS =0V
-100
nA
-1.0
V GS =±12V, V DS =0V
V
I =-250µA, V DS = V GS
Ω
Ω
V GS =-10V, I D =-4.9A
V GS =-4.5V, I D =-3.6A
8.8
S
V DS =-15V,I D =-4.9A
C iss
930
pF
Output Capacitance
C oss
311
pF
Reverse Transfer Capacitance
C rss
113
pF
Turn-On Delay Time
t d(on)
3.8
ns
Rise Time
tr
6.4
ns
Turn-Off Delay Time
t d(off)
49.5
ns
Fall Time
tf
26.2
ns
Gate Charge
Qg
13
nC
Total Gate Charge
Qg
25.7
nC
Gate-Source Charge
Q gs
3.2
nC
Gate Drain Charge
Q gd
7.0
nC
0.055
0.080
D
DYNAMIC (3)
V DS =-25 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
V DD =-15V, I D =-4.9A
R G =6.0Ω, V GS =-10V
V DS =-15V,V GS =-5V
I D =-4.9A
V DS =-15V,V GS =-10V
I D =-4.9A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge(3)
Q rr
0.95
V
T j =25°C, I S =-4.9A,
V GS =0V
31.5
ns
T j =25°C, I F =-4.9A,
di/dt= 100A/µs
63.9
nC
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - MAY 2001
ZXMD65P03N8
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
Min
Max
Min
Max
A
4.80
4.98
0.189
0.196
B
1.27 BSC
0.05 BSC
C
0.53 REF
0.02 REF
D
0.36
0.46
0.014
0.018
E
3.81
3.99
0.15
0.157
F
1.35
1.75
0.05
0.07
G
0.10
0.25
0.004
0.010
J
5.80
6.20
0.23
0.24
K
0°
8°
0°
8°
L
0.41
1.27
0.016
0.050
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (631) 543-7100
Fax: (631) 864-7630
Zetex (Asia) Ltd.
3701-04 Metroplaza, Tower 1
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 2000
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
PROVISIONAL ISSUE A - MAY 2001