A Product Line of Diodes Incorporated ZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits RDS(on) ID TA = 25°C • Low input capacitance • Low on-resistance • Fast switching speed 85mΩ @ VGS = 10V 7.7A • 100mΩ @ VGS = 6V 7.1A • 100V “Green” Component and RoHS compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET features low on-resistance, fast switching and a high avalanche withstand capability, making it ideal for high efficiency power management applications. • Case: TO252-3L • Case Material: Molded Plastic “Green” Molding Compound, UL Flammability Classification Rating 94V-0 (Note 1) • • Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters • Terminal Connections: See Diagram • Power management functions • • Disconnect switches Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Motor control • Weight: 0.33 grams (approximate) • Uninterrupted power supply D D TO252-3L G D G Top View Ordering Information Product ZXMN10A09KTC Notes: S S Pin Out – Top View Equivalent Circuit (Note 1) Marking ZXMN10A09 Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information ZXMN 10A09 YYWW ZXMN10A09K Document Number DS32045 Rev. 7 - 2 ZXMN = Product Type Marking Code, Line 1 10A09 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A09K Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS = 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) Thermal Characteristics (Note 3) TA = 70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Unit V V Value 4.31 34.4 10.1 80.8 2.15 17.2 29 12.3 58 1.14 -55 to 150 Unit A A A A @TA = 25°C unless otherwise specified Characteristic Symbol (Note 2) Power dissipation Linear derating factor (Note 3) PD (Note 6) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: Value 100 ±20 7.7 6.2 5.0 27 11 27 (Note 2) (Note 3) (Note 6) (Note 5) RθJA RθJL TJ, TSTG W mW/°C °C/W °C/W °C 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. Thermal resistance from junction to solder-point (at the end of the drain lead). 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. ZXMN10A09K Document Number DS32045 Rev. 7 - 2 2 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A09K Thermal Characteristics RDS(on) ID Drain Current (A) ID Drain Current (A) RDS(on) 10 Limit 1 DC 1s 100ms 100m 1ms 25mm x 25mm 1oz FR4 10m 1 1 DC 1s 100ms 100m 10ms T amb=25°C 10 Limit 100µs 10ms T amb=25°C 10 100 10 S a fe O p e ra tin g A re a Thermal Resistance (°C/W) Thermal Resistance (°C/W) 60 T amb=25°C 25mm x 25mm 1oz FR4 40 20 D=0.5 D=0.1 D=0.2 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k 50mm x 50mm 2oz FR4 10 25mm x 25mm 1oz FR4 1 100µ 1m 10m 100m 1 10 100 1k T amb=25°C 25 50mm x 50mm 2oz FR4 20 D=0.5 15 10 D=0.05 5 Single Pulse 0 100µ 10m 100m 4.0 1 10 100 1k 50mm x 50mm 2oz FR4 3.5 3.0 25mm x 25mm 1oz FR4 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Pulse Power Dissipation Document Number DS32045 Rev. 7 - 2 1m 4.5 Pulse Width (s) ZXMN10A09K D=0.1 D=0.2 Transient Thermal Impedance Max Power Dissipation (W) Max Power Dissipation (W) Single Pulse T amb=25°C 30 Pulse Width (s) Pulse Width (s) T ra n s ie n t T h e rm a l Im p e d a n c e 100 100 VDS Drain-Source Voltage (V) Safe Operating Area 30 100µs 1 VDS Drain-Source Voltage (V) 50 1ms 50mm x 50mm 2oz FR4 10m Derating Curve 3 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A09K Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Unit Test Condition 100 ⎯ ⎯ V ID = 250μA, VGS = 0V ⎯ ⎯ 1 µA VDS = 100V, VGS = 0V IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V VGS(th) 2 ⎯ 4 V ID = 250μA, VDS = VGS RDS (ON) ⎯ ⎯ ON CHARACTERISTICS Gate Threshold Voltage 0.085 Static Drain-Source On-Resistance (Note 7) Ω 0.100 VGS = 10V, ID = 4.6A VGS = 6V, ID = 4.2A Forward Transconductance (Notes 7 & 8) gfs ⎯ 10.7 ⎯ S VDS = 15V, ID = 4.6A Diode Forward Voltage (Note 7) VSD ⎯ 0.850 0.950 V IS = 4.7A, VGS = 0V Reverse recovery time (Note 8) trr ⎯ 40 ⎯ ns Reverse recovery charge (Note 8) Qrr ⎯ 62 ⎯ nC Input Capacitance Ciss ⎯ 1313 ⎯ pF Output Capacitance Coss ⎯ 83 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 56 ⎯ pF Total Gate Charge (Note 9) Qg ⎯ 17.2 ⎯ nC Total Gate Charge (Note 9) Qg ⎯ 26.0 ⎯ nC Gate-Source Charge (Note 9) Qgs ⎯ 5.6 ⎯ nC Gate-Drain Charge (Note 9) Qgd ⎯ 7.6 ⎯ nC Turn-On Delay Time (Note 9) tD(on) ⎯ 6.8 ⎯ ns Turn-On Rise Time (Note 9) tr ⎯ 5.3 ⎯ ns Turn-Off Delay Time (Note 9) tD(off) ⎯ 27.5 ⎯ ns tf ⎯ 12.3 ⎯ ns IS = 3.0A, di/dt = 100A/μs DYNAMIC CHARACTERISTICS (Note 8) Turn-Off Fall Time (Note 9) Notes: VDS = 50V, VGS = 0V f = 1MHz VGS = 6V VGS = 10V VDS = 50V, ID = 4.6A VDD = 50V, VGS = 10V ID = 1.0A, RG ≅ 25Ω 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. ZXMN10A09K Document Number DS32045 Rev. 7 - 2 4 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A09K Typical Characteristics 5V 10V ID Drain Current (A) 4.5V 4V VGS 1 3.5V 0.1 1 T = 150°C 10 3.5V 3V 0.1 VDS = 10V 0.1 5 VGS Gate-Source Voltage (V) Normalised RDS(on) and VGS(th) ID Drain Current (A) T = 25°C VGS 4V 4.5V 5V 0.1 10V 0.1 1 RDS(on) 1.4 1.2 VGS = VDS 1.0 ID = 250uA 0.8 0.6 VGS(th) 0.4 -50 0 50 100 150 10 T = 150°C 1 T = 25°C 0.1 0.01 0.2 10 0.4 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) On-Resistance v Drain Current Document Number DS32045 Rev. 7 - 2 ID = 4.6A 1.6 ID Drain Current (A) ZXMN10A09K VGS = 10V 1.8 Normalised Curves v Temperature ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (Ω) 3.5V 2.0 Tj Junction Temperature (°C) Typical Transfer Characteristics T = 25°C 10 Output Characteristics T = 150°C 1 1 VDS Drain-Source Voltage (V) 10 4 VGS 1 Output Characteristics 3 4.5V 4V VDS Drain-Source Voltage (V) 1 5V 10V 10 ID Drain Current (A) T = 25°C 10 Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A09K 2000 C Capacitance (pF) VGS = 0V f = 1MHz 1500 CISS 1000 COSS CRSS 500 0 0.1 1 10 100 VGS Gate-Source Voltage (V) Typical Characteristics - continued 10 8 6 4 VDS = 50V 2 ID = 4.6A 0 0 5 Capacitance v Drain-Source Voltage 10 15 20 25 30 Q - Charge (nC) VDS - Drain - Source Voltage (V) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms ZXMN10A09K Document Number DS32045 Rev. 7 - 2 Switching time test circuit 6 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A09K Package Outline Dimensions DIM Min Inches Max Millimeters Min Max DIM Inches A 0.086 0.094 2.18 2.39 e A1 - 0.005 - 0.127 H 0.370 0.410 9.40 0.055 0.070 1.40 Min Max Millimeters Min Max 0.090 BSC 2.29 BSC 10.41 b 0.020 0.035 0.508 0.89 L b2 0.030 0.045 0.762 1.14 L1 b3 0.205 0.215 5.21 5.46 L2 c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016 D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52 0.108 REF 1.78 2.74 REF 0.020 BSC 0.508 BSC D1 0.205 - 5.21 - θ1° 0° 10° 0° 10° E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15° E1 0.170 - 4.32 - - - - - - Suggested Pad Layout 6.2 0.244 3.0 0.118 5.8 0.228 1.6 0.063 2.58 0.101 ZXMN10A09K Document Number DS32045 Rev. 7 - 2 7 of 8 www.diodes.com 6.17 0.243 mm inches January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A09K IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com ZXMN10A09K Document Number DS32045 Rev. 7 - 2 8 of 8 www.diodes.com January 2010 © Diodes Incorporated