DIODES ZXMN3A01E6TA

ZXMN3A01E6
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 30V; RDS(ON) = 0.12
ID = 3.0A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT23-6
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3A01E6TA
7”
8mm
3000 units
ZXMN3A01E6TC
13”
8mm
10000 units
DEVICE MARKING
Top View
• 3A1
ISSUE 2 - JULY 2002
1
ZXMN3A01E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
Gate Source Voltage
V GS
Continuous Drain Current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
Pulsed Drain Current (c)
ID
Continuous Source Current (Body Diode) (b)
LIMIT
30
UNIT
V
20
V
3.0
2.4
2.4
A
I DM
10
A
IS
2.4
A
Pulsed Source Current (Body Diode) (c)
I SM
10
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
1.1
8.8
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
113
°C/W
Junction to Ambient (b)
R θJA
70
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ISSUE 2 - JULY 2002
2
ZXMN3A01E6
CHARACTERISTICS
1.2
RDS(on)
Limited
Max Power Dissipation (W)
IC Drain Current (A)
10
1
DC
1s
100ms
100m
10ms
10m Single Pulse
1ms
Tamb=25°C
100m
100µs
1
10
VDS Collector-Emitter Voltage (V)
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
Temperature (°C)
Safe Operating Area
Derating Curve
100
Tamb=25°C
100
Maximum Power (W)
Thermal Resistance (°C/W)
120
80
60
40
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
20
100µ 1m
10m 100m
1
10
100
Single Pulse
Tamb=25°C
10
1
0.1
100µ 1m
1k
10m 100m
1
10
100
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 2 - JULY 2002
3
1k
ZXMN3A01E6
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
30
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
TYP.
MAX. UNIT
CONDITIONS.
STATIC
V
I D =250µA, V GS =0V
0.5
µA
V DS =30V, V GS =0V
100
nA
1
V GS =⫾20V, V DS =0V
V
I =250µA, V DS = V GS
D
Static Drain-Source On-State Resistance R DS(on)
(1)
0.106 0.12
0.18
Ω
Ω
V GS =10V, I D =2.5A
V GS =4.5V, I D =2.0A
Forward Transconductance (1)(3)
g fs
3.5
S
V DS =4.5V,I D =2.5A
Input Capacitance
C iss
190
pF
Output Capacitance
C oss
38
pF
Reverse Transfer Capacitance
C rss
20
pF
Turn-On Delay Time
t d(on)
1.7
ns
Rise Time
tr
2.3
ns
Turn-Off Delay Time
t d(off)
6.6.
ns
Fall Time
tf
2.9
ns
Gate Charge
Qg
2.3
nC
Total Gate Charge
Qg
3.9
nC
Gate-Source Charge
Q gs
0.6
nC
Gate-Drain Charge
Q gd
0.9
nC
Diode Forward Voltage (1)
V SD
0.84
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
DYNAMIC (3)
V DS =25 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
V DD =15V, I D =2.5A
R G =6.0Ω, V GS =10V
V DS =15V,V GS =5V,
I D =2.5A
V DS =15V,V GS =10V,
I D =2.5A
SOURCE-DRAIN DIODE
0.95
V
T J =25°C, I S =1.7A,
V GS =0V
17.7
ns
T J =25°C, I F =2.5A,
di/dt= 100A/µs
13.0
nC
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JULY 2002
4
ZXMN3A01E6
10V
T = 25°C
10
7V
T = 150°C
5V
4.5V
ID Drain Current (A)
ID Drain Current (A)
TYPICAL CHARACTERISTICS
4V
3.5V
1
3V
VGS
0.1
2.5V
0.1
1
5V
1
4V
3.5V
3V
2.5V
VGS
0.1
2V
10
0.1
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
10
1.6
VDS = 10V
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
7V
4.5V
VDS Drain-Source Voltage (V)
T = 150°C
1
T = 25°C
0.1
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS = 10V
ID = 2.5A
1.4
RDS(on)
1.2
1.0
VGS(th)
0.8
VGS = VDS
ID = 250uA
0.6
0.4
-50
VGS Gate-Source Voltage (V)
3V
3.5V
4V
1
VGS
4.5V
5V
7V
0.1
10V
T = 25°C
0.1
1
ID Drain Current (A)
50
100
150
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
) W
(
2.5V
0
Tj Junction Temperature (°C)
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance
10V
10
10
10
T = 150°C
1
T = 25°C
0.1
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
ISSUE 2 - JULY 2002
5
ZXMN3A01E6
TYPICAL CHARACTERISTICS
10
VGS = 0V
f = 1MHz
250
VGS Gate-Source Voltage (V)
C Capacitance (pF)
300
200
CISS
150
COSS
CRSS
100
50
0
0.1
1
10
ID = 2.5A
8
6
VDS = 15V
4
2
0
0
1
2
3
4
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
ISSUE 2 - JULY 2002
6
ZXMN3A01E6
PACKAGE OUTLINE
PAD LAYOUT DETAILS
e
b
L 2
E1
E
DATUM A
a
e1
D
C
A
A2
A1
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES.
PACKAGE DIMENSIONS
Millimetres
Inches
Millimetres
DIM
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
0.90
1.45
0.35
0.057
E
2.60
3.00
0.102
0.118
A1
0.00
0.15
0
0.006
E1
1.50
1.75
0.059
0.069
A2
0.90
1.30
0.035
0.051
L
0.10
0.60
0.004
0.002
b
0.35
0.50
0.014
0.019
e
0.95 REF
0.037 REF
C
0.09
0.20
0.0035
0.008
e1
1.90 REF
0.074 REF
D
2.80
3.00
0.110
0.118
L
0°
10°
0°
10°
© Zetex plc 2002
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ISSUE 2 - JULY 2002
7