ZXMN3A04DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 30V; RDS(ON)= 0.02 ; ID= 8.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SO8 • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMN3A04DN8TA 7’‘ 12mm 500 units ZXMN3A04DN8TC 13’‘ 12mm 2500 units PINOUT DEVICE MARKING ZXMN 3A04D Top view ISSUE 2 - OCTOBER 2002 1 ZXMN3A04DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS Gate Source Voltage LIMIT UNIT 30 V V GS ⫾20 V Continuous Drain Current (V GS =10V; T A =25°C)(b)(d) (V GS =10V; T A =70°C)(b)(d) (V GS =10V; T A =25°C)(a)(d) ID 8.5 6.8 6.5 A Pulsed Drain Current (c) I DM 39 A Continuous Source Current (Body Diode) (b) IS 3.6 A Pulsed Source Current (Body Diode)(c) I SM 39 A Power Dissipation at T A =25°C (a)(d) Linear Derating Factor PD 1.25 10 W mW/°C Power Dissipation at T A =25°C (a)(e) Linear Derating Factor PD 1.81 14.5 W mW/°C Power Dissipation at T A =25°C (b)(d) Linear Derating Factor PD 2.15 17.2 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R θJA 100 °C/W Junction to Ambient (b)(e) R θJA 69 °C/W Junction to Ambient (b)(d) R θJA 58 °C/W Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Trnsient Thermal Impedance Graph. (d) For a dual device with one active die. ISSUE 2 - OCTOBER 2002 2 ZXMN3A04DN8 CHARACTERISTICS ISSUE 2 - OCTOBER 2002 3 ZXMN3A04DN8 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. V (BR)DSS 30 TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs Input Capacitance V I D =250µA, V GS =0V 0.5 µA V DS =30V, V GS =0V 100 nA V GS =±20V, V DS =0V V I =250µA, V DS = V GS Ω Ω V GS =10V, I D =12.6A V GS =4.5V, I D =10.6A 22.1 S V DS =15V,I D =12.6A C iss 1890 pF Output Capacitance C oss 349 pF Reverse Transfer Capacitance C rss 218 pF 1.0 0.02 0.03 D DYNAMIC (3) V DS =15V, V GS =0V, f=1MHz SWITCHING(2) (3) Turn-On Delay Time t d(on) 5.2 ns Rise Time tr 6.1 ns Turn-Off Delay Time t d(off) 38.1 ns Fall Time tf 20.2 ns Gate Charge Qg 19.9 nC Total Gate Charge Qg 36.8 nC Gate-Source Charge Q gs 5.8 nC Gate-Drain Charge Q gd 7.1 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr V DD =15V, I D =1A R G =6.0Ω, V GS =10V V DS =15V,V GS =5V, I D =6.5A V DS =15V,V GS =10V, I D =6.5A SOURCE-DRAIN DIODE V T J =25°C, I S =6.8A, V GS =0V 18.4 ns T J =25°C, I F =2.3A, di/dt= 100A/µs 11 nC 0.95 NOTES (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - OCTOBER 2002 4 ZXMN3A04DN8 TYPICAL CHARACTERISTICS ISSUE 2 - OCTOBER 2002 5 ZXMN3A04DN8 TYPICAL CHARACTERISTICS ISSUE 2 - OCTOBER 2002 6 ZXMN3A04DN8 PACKAGE OUTLINE PACKAGE DIMENSIONS INCHES MILLIMETRES DIM MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 A1 0.004 0.010 0.10 0.25 D 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 e CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES 0.050 BSC 1.27 BSC b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 ⍜ 0⬚ 8⬚ 0⬚ 8⬚ h 0.010 0.020 0.25 0.50 © Zetex plc 2002 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (631) 360 2222 Fax: (631) 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - OCTOBER 2002 7