ZXMN4A06K 40V N-channel enhancement mode MOSFET Summary V(BR)DSS= -40V; RDS(ON) = 0.05; ID = 10.9A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Features D • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • DPAK package G S Applications • DC - DC converters • Audio output stages • Relay and solenoid driving • Motor control Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 13 16 2,500 ZXMN4A06KTC Device marking Pinout - Top view ZXMN 4A06 Issue 1 - March 2006 © Zetex Semiconductors plc 2005 1 www.zetex.com ZXMN4A06K Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 40 V Gate-source voltage VGS 20 V 10.9 A 8.7 A 7.2 A Continuous drain current: VGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) ID VGS=10V; TA=25°C (a) Pulsed drain current (c) IDM 35.3 A Continuous source current (body diode) IS 10.8 A Pulsed source current (body diode) (c) ISM 35.3 A Power dissipation at TA=25°C (a) Linear derating factor PD 4.2 33.6 W mW/°C Power dissipation at TA=25°C (b) Linear derating factor PD 9.5 76 W mW/°C Power dissipation at TA=25°C (d) Linear derating factor PD 2.15 17.2 W mW/°C -55 to +150 °C Value Unit (b) Operating and storage temperature range Tj:Tstg Thermal resistance Parameter Symbol Junction to ambient (a) RJA 30 °C/W Junction to ambient (b) RJA 13.2 °C/W Junction to ambient (d) RJA 58 °C/W NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - March 2006 © Zetex Semiconductors plc 2005 2 www.zetex.com ZXMN4A06K Characteristics Issue 1 - March 2006 © Zetex Semiconductors plc 2005 3 www.zetex.com ZXMN4A06K Electrical characteristics (at TA = 25°C unless otherwise stated) Parameter Symbol Min. V(BR)DSS 40 Typ. Max. Unit Conditions Static Drain-source breakdown voltage Zero gate voltage drain current IDSS Gate-body leakage IGSS Gate-source threshold voltage VGS(th) V ID=250A, VGS=0V 1 A VDS=40V, VGS=0V 100 nA VGS=±20V, VDS=0V 1.0 V ID=250A, VDS= VGS 0.050 VGS=10V, ID=4.5A 0.075 VGS=4.5V, ID=3.2A VDS=15V,ID=4.5A Static drain-source on-state resistance (*) RDS(on) Forward transconductance(‡) gfs 11.5 S Input capacitance Ciss 827 pF Output capacitance Coss 133 pF Reverse transfer capacitance Crss 84 pF Turn-on delay time td(on) 3.2 ns Rise time tr 3.8 ns Turn-off delay time td(off) 23.3 ns Fall time tf 10.9 ns Total gate charge Qg 17.1 nC Gate-source charge Qgs 2.41 nC Gate-drain charge Qgd 3.4 nC Diode forward voltage(*) VSD 0.83 Reverse recovery time(†) trr Reverse recovery charge(‡) Qrr Dynamic (‡) VDS=20 V, VGS=0V, f=1MHz Switching (†) (‡) VDD =20V, ID=1A RG=6.0, VGS=10V (refer to test circuit) VDS=20V,VGS=10V, ID=4.5A (refer to test circuit) Source-drain diode 0.95 V TJ=25°C, IS=4.5A, VGS=0V 16 ns 9 nC TJ=25°C, IF=4A, di/dt= 100A/s NOTES: (*) Measured under pulsed conditions. Width 300s. Duty cycle 2%. (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Issue 1 - March 2006 © Zetex Semiconductors plc 2005 4 www.zetex.com ZXMN4A06K Typical charactersitics Issue 1 - March 2006 © Zetex Semiconductors plc 2005 5 www.zetex.com ZXMN4A06K Typical characteristics Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VCC 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms Issue 1 - March 2006 © Zetex Semiconductors plc 2005 Switching time test circuit 6 www.zetex.com ZXMN4A06K Intentionally left blank Issue 1 - March 2006 © Zetex Semiconductors plc 2005 7 www.zetex.com ZXMN4A06K Package details - DPAK Package dimensions Dim. A A1 b b2 b3 c c2 D D1 E E1 Inches Min. Max. 0.086 0.094 0.005 0.020 0.035 0.030 0.045 0.205 0.215 0.018 0.024 0.018 0.023 0.213 0.245 0.205 0.250 0.265 0.170 - Millimeters Min. Max. 2.18 2.39 0.127 0.508 0.89 0.762 1.14 5.21 5.46 0.457 0.61 0.457 0.584 5.41 6.22 5.21 6.35 6.73 4.32 - Dim. e H L L1 L2 L3 L4 L5 1° ° - Inches Min. Max. 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.065 0.025 0.040 0.045 0.060 0° 10° 0° 15° - Millimeters Min. Max. 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.508 BSC 0.89 1.65 0.635 1.016 1.14 1.52 0° 10° 0° 15° - Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - March 2006 © Zetex Semiconductors plc 2005 8 www.zetex.com