ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=60V; RDS(ON)=0.045⍀ D=5.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN6A09DN8TA 7” 12mm 500 units ZXMN6A09DN8TC 13” 12mm 2500 units DEVICE MARKING • ZXMN 6A09D PROVISIONAL ISSUE D - AUGUST 2001 1 Top View ZXMN6A09DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS LIMIT 60 UNIT V Gate Source Voltage V GS ⫾20 V Continuous Drain Current (V GS =10V; T A =25°C)(b)(d) (V GS =10V; T A =70°C)(b)(d) (V GS =10V; T A =25°C)(a)(d) ID 5.2 4.1 3.9 A Pulsed Drain Current (c) I DM 17.6 A Continuous Source Current (Body Diode) (b) IS 3.5 A Pulsed Source Current (Body Diode)(c) I SM 15 A Power Dissipation at T A =25°C (a)(d) Linear Derating Factor PD 1.25 10 W mW/°C Power Dissipation at T A =25°C (a)(e) Linear Derating Factor PD 1.81 14.5 W mW/°C Power Dissipation at T A =25°C (b)(d) Linear Derating Factor PD 2.16 17.3 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(d) R θJA 100 °C/W Junction to Ambient (a)(e) R θJA 69 °C/W Junction to Ambient (b)(d) R θJA 58 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature. (d) For device with one active die (e) For device with two active die running at equal power. PROVISIONAL ISSUE D - AUGUST 2001 2 ZXMN6A09DN8 THERMAL CHARACTERISTICS RDS(on) Limit 1 DC 1s 100m 10m 100ms 10ms Single Pulse Tamb=25˚ C One active die 100m 1ms 100µs 1 10 100 2.0 Max Power Dissipation (W) ID Drain Current (A) 10 1.8 1.6 1.4 Two active die 1.2 1.0 0.8 0.6 One active die 0.4 0.2 0.0 0 20 VDS Drain-Source Voltage (V) Maximum Power (W) Thermal Resistance (˚ C/W) D=0.05 D=0.1 10 80 100 120 140 160 Derating Curve Single Pulse 1 60 Temperature (˚ C) Safe Operating Area 110 Tamb=25˚ C 100 90 One active die 80 70 D=0.5 60 50 40 D=0.2 30 20 10 0 100µ 1m 10m 100m 40 100 Single Pulse Tamb=25˚ C One active die 100 1k 10 1 100µ Pulse Width (s) 1m 10m 100m 1 10 Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation PROVISIONAL ISSUE D - AUGUST 2001 3 100 1k ZXMN6A09DN8 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs Input Capacitance 60 V I D =250µA, V GS =0V 1 µA V DS =60V, V GS =0V 100 nA 1.0 V GS =±20V, V DS =0V V I =250µA, V DS = V GS Ω Ω V GS =10V, I D =8.2A V GS =4.5V, I D =7.4A 15 S V DS =15V,I D =8.2A C iss 1407 pF Output Capacitance C oss 121 pF Reverse Transfer Capacitance C rss 59 pF 0.045 0.075 D DYNAMIC (3) V DS =40 V, V GS =0V, f=1MHz SWITCHING(2) (3) Turn-On Delay Time t d(on) 4.9 ns Rise Time tr 5.0 ns Turn-Off Delay Time t d(off) 25.3 ns Fall Time tf 4.6 ns Gate Charge Qg 12.4 nC Total Gate Charge Qg 24.2 nC Gate-Source Charge Q gs 5.2 nC Gate-Drain Charge Q gd 3.5 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr V DD =15V, I D =3.5A R G =6.0Ω, V GS =10V (refer to test circuit) V DS =15V,V GS =5V, I D =3.5A V DS =15V,V GS =10V, I D =3.5A SOURCE-DRAIN DIODE 0.95 V T J =25°C, I S =6.6A, V GS =0V 26.3 ns T J =25°C, I F =3.5A, di/dt= 100A/µs 26.6 nC NOTES (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE D - AUGUST 2001 4 ZXMN6A09DN8 TYPICAL CHARACTERISTICS T = 150˚ C 5V 4V 3.5V 1 3V VGS 0.1 2.5V 0.01 0.1 1 0.1 T = 25˚ C VDS = 10V 3 4 5 ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance 4V VGS 0.1 5V 10V T = 25˚ C 1 1 10 VGS = 10V ID = 12A 1.6 RDS(on) 1.4 1.2 1.0 0.8 VGS(th) VGS = V DS ID = 250uA 0.6 0.4 -50 0 50 100 150 Tj Junction Temperature (˚ C) 1 3.5V 0.1 1.8 VGS Gate-Source Voltage (V) 3V 2V VGS Normalised RDS(on) and VGS(th) ID Drain Current (A) T = 150˚ C 2 2.5V VDS Drain-Source Voltage (V) 10 0.1 3.5V 1 VDS Drain-Source Voltage (V) 1 4V 3V 0.01 10 5V 10 ID Drain Current (A) ID Drain Current (A) T = 25˚ C 10 10 ID Drain Current (A) PROVISIONAL ISSUE D - AUGUST 2001 5 10 T = 150˚ C 1 T = 25˚ C 0.1 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) 1.2 ZXMN6A09DN8 VGS Gate-Source Voltage (V) 1800 C Capacitance (pF) 1600 1400 1200 1000 CISS VGS = 0V f = 1MHz 800 COSS CRSS 600 400 200 0 1 10 VDS - Drain - Source Voltage (V) ID = 3.5A VDS = 15V Q - Charge (nC) Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE D - AUGUST 2001 6 ZXMN6A09DN8 PROVISIONAL ISSUE D - AUGUST 2001 7 ZXMN6A09DN8 PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min Max A 4.80 4.98 0.189 0.196 B 1.27 BSC 0.05 BSC C 0.53 REF 0.02 REF D 0.36 0.46 0.014 0.018 E 3.81 3.99 0.15 0.157 F 1.35 1.75 0.05 0.07 G 0.10 0.25 0.004 0.010 J 5.80 6.20 0.23 0.24 K 0° 8° 0° 8° L 0.41 1.27 0.016 0.050 © Zetex plc 2001 Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 Zetex Inc Suite 315 700 Veterans Memorial Highway Hauppauge NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong, Hong Kong China Telephone: (852) 26100 611 Fax: (852) 24250 494 These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE D - AUGUST 2001 8