ZETEX ZXMN6A25DN8(1)

ZXMN6A25DN8
DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS= 60V: RDS(ON)= 0.055
; ID= 4.7A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
SO8
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Motor control
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN6A25DN8TA
7’‘
12mm
500 units
ZXMN6A25DN8TC
13’‘
12mm
2500 units
PINOUT
DEVICE MARKING
• ZXMN
6A25D
Top view
PROVISIONAL ISSUE B - JUNE 2003
1
SEMICONDUCTORS
ZXMN6A25DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
60
V
V GS
⫾20
V
4.7
A
3.7
A
3.6
A
Gate-Source Voltage
Continuous Drain Current @V GS =10V; T A =25°C
(b) (d)
@V GS =10V; T A =70°C
(b) (d)
@V GS =10V; T A =25°C
(a) (d)
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T A =25°C
(b)
(c)
ID
I DM
22
A
IS
3.5
A
I SM
(a) (d)
PD
Linear Derating Factor
Power Dissipation at T A =25°C (a) (e)
Linear Derating Factor
PD
Power Dissipation at T A =25°C (b) (d)
PD
Linear Derating Factor
T j :T stg
Operating and Storage Temperature Range
22
A
1.25
W
10
mW/°C
1.8
W
14
mW/°C
2.1
W
17
mW/°C
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
VALUE
UNIT
Junction to Ambient
(a) (d)
R ⍜JA
SYMBOL
100
°C/W
Junction to Ambient
(a) (e)
R ⍜JA
70
°C/W
Junction to Ambient
(b) (d)
R ⍜JA
60
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300␮s - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
PROVISIONAL ISSUE B - JUNE 2003
SEMICONDUCTORS
2
ZXMN6A25DN8
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE B - JUNE 2003
3
SEMICONDUCTORS
ZXMN6A25DN8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
60
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
Resistance
(1)
Forward Transconductance
(1) (3)
V
I D =250␮A, V GS =0V
1.0
␮A
V DS =60V, V GS =0V
100
nA
V
V GS =±20V, V DS =0V
I =250␮A, V DS = V GS
⍀
V GS =10V, I D =3.6A
1.0
0.055
0.075
R DS(on)
D
⍀
V GS =4.5V, I D =3A
S
V DS =15V,I D =4.5A
g fs
10.2
1063
pF
V DS =30V , V GS =0V,
f=1MHz
DYNAMIC (3)
Input Capacitance
C iss
Output Capacitance
C oss
104
pF
Reverse Transfer Capacitance
C rss
64
pF
ns
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
3.8
Rise Time
tr
4.0
ns
Turn-Off Delay Time
t d(off)
26.2
ns
Fall Time
tf
10.6
ns
Gate Charge
Qg
11.0
nC
Total Gate Charge
Qg
20.4
nC
Gate-Source Charge
Q gs
4.1
nC
Gate-Drain Charge
Q gd
5.1
nC
V SD
0.85
t rr
22.0
ns
Q rr
21.4
nC
V DD =30V, I D =1A
R G ≅6.0⍀, V GS =10V
V DS =30V,V GS =5V,
I D =4.5A
V DS =30V,V GS =10V,
I D =4.5A
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
0.95
V
T J =25°C, I S =5.5A,
V GS =0V
T J =25°C, I F =2.2A,
di/dt= 100A/␮s
NOTES
(1) Measured under pulsed conditions. Width=300␮s. Duty cycle ⱕ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE B - JUNE 2003
SEMICONDUCTORS
4
ZXMN6A25DN8
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE B - JUNE 2003
5
SEMICONDUCTORS
ZXMN6A25DN8
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE B - JUNE 2003
SEMICONDUCTORS
6
ZXMN6A25DN8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
⍜
MIN
MAX
MIN
MAX
A
0.053
0.069
1.35
1.75
A1
0.004
0.010
0.10
0.25
D
0.189
0.197
4.80
5.00
H
0.228
0.244
5.80
6.20
E
0.150
0.157
3.80
4.00
L
0.016
0.050
0.40
1.27
L
H
D
E
MILLIMETRES
DIM
Pin 1
A
c
e
0.050 BSC
1.27 BSC
b
e
A1
Seating Plane
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
b
0.013
0.020
0.33
0.51
c
0.008
0.010
0.19
0.25
⍜
0⬚
8⬚
0⬚
8⬚
h
0.010
0.020
0.25
0.50
© Zetex plc 2003
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[email protected]
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Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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PROVISIONAL ISSUE B - JUNE 2003
7
SEMICONDUCTORS