ZETEX ZXMP3F37DN8TA

ZXMP3F37DN8
30V SO8 Dual P-channel enhancement mode MOSFET
Summary
V(BR)DSS (V)
RDS(on) (Ω)
ID(A)
-30
0.025 @ VGS=-10V
-8.3
0.041 @ VGS=-4.5V
Description
This new generation Trench MOSFET from Zetex has been
designed to minimize the on-state resistance (RDS(on))
and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Features
•
•
•
•
Low on-resistance
Fast switching speed
Low gate drive
Dual SO8 package
Applications
•
DC-DC Converters
•
Power management functions
•
Disconnect switches
•
Motor control
Ordering information
Device
ZXMP3F37DN8TA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
500
Device marking
ZXMP 3F37D
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ZXMP3F37DN8
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-Source voltage
VDSS
-30
V
Gate-Source voltage
VGS
±20
V
ID
-7.3
V
Continuous Drain current @ VGS= -10V; TA=25°C
@ VGS= -10V; TA=70°C
@ VGS= -10V; TA=25°C
@ VGS= -10V; TL=25°C
Pulsed Drain current
(b)(d)
(b)(d)
-5.9
(a)(d)
-5.7
(f)
-8.3
(c)
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TL =25°C
Linear derating factor
Power dissipation at TL =25°C
Linear derating factor
(b)
(c)
(a)(d)
(a)(e)
(b)(d)
(a)(f)
Operating and storage temperature range
IDM
-36
A
IS
-3.5
A
ISM
-36
A
PD
1.25
10
W
mW/°C
PD
1.8
14
W
mW/°C
PD
2.1
17
W
mW/°C
PD
2.7
21.5
W
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Value
Unit
RθJA
100
°C/W
RθJA
70
°C/W
RθJA
60
°C/W
RθJL
46.42
°C/W
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to ambient
Junction to lead
(a)(d)
(b)(e)
(b)(d)
(a)(f)
NOTES:
(a)
(b)
(c)
(d)
(e)
(f)
For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions.
For a dual device surface mounted on FR4 PCB measured at t ≤ 10 sec.
Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
For a dual device with one active die.
For a dual device with 2 active die running at equal power.
Thermal resistance from junction to solder-point (at the end of the drain lead).
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-ID Drain Current (A)
100
RDS(on)
10 Limited
1
100m
10m
1m
100m
DC
1s
100ms
10ms
Single Pulse
T amb=25°C
1ms
100µs
One active die
1
10
-VDS Drain-Source Voltage (V)
Max Power Dissipation (W)
Thermal characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Two active die
One active die
0
20
110
T amb=25°C
100
One active die
90
80
70
D=0.5
60
50
40
Single Pulse
D=0.2
30
20
D=0.05
10
D=0.1
0
100µ 1m 10m 100m 1
10
100
1k
100 120 140 160
100
One active die
10
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
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80
Single Pulse
T amb=25°C
1
100µ
Pulse Width (s)
Issue 1 - August 2008
60
Temperature (°C)
Derating Curve
Maximum Power (W)
Thermal Resistance (°C/W)
Safe Operating Area
40
Pulse Power Dissipation
3
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ZXMP3F37DN8
Electrical characteristics (at Tamb = 25°C unless otherwise stated) Q1 and Q2
Parameter
Static
Symbol
Min.
Drain-Source breakdown
voltage
V(BR)DSS
-30
Zero Gate voltage Drain
current
IDSS
Gate-Body leakage
IGSS
Gate-Source threshold
voltage
VGS(th)
Static Drain-Source
( )
on-state resistance *
RDS(on)
Forward
( ) (†)
Transconductance *
gfs
Input capacitance
Typ.
Max.
Unit
Conditions
V
ID = -250μA, VGS=0V
-1.0
µA
VDS=-YV, VGS=0V
100
nA
VGS=±20V, VDS=0V
-2.5
V
ID= -250μA, VDS=VGS
0.025
0.041
Ω
VGS= -10V, ID= -7.1A
VGS= -4.5V, ID= -5.5A
18.6
S
VDS= -15V, ID= -7.1A
Ciss
1678
pF
Output capacitance
Coss
303
pF
Reverse transfer
capacitance
Crss
178
pF
Turn-on-delay time
td(on)
3.5
ns
Rise time
tr
4.9
ns
VDD= -15V, VGS= -10V
Turn-off delay time
td(off)
44
ns
Fall time
tf
28
ns
ID= -1A
RG ≅ 6.0Ω,
Dynamic
-1.3
(†)
Switching
VDS= -15V, VGS=0V
f=1MHz
(‡) (†)
Gate charge
Total Gate charge
Qg
31.6
nC
Gate-Source charge
Qgs
4.3
nC
Gate-Drain charge
Qgd
6.2
nC
*
VSD
-0.80
(‡)
trr
16.2
ns
Qrr
10
nC
VDS= -15V, VGS= -10V
ID= -7.1A
Source–Drain diode
Diode forward voltage
( )
Reverse recovery time
Reverse recovery charge
(‡)
-1.2
V
IS= -1.7A,VGS=0V
IS= -2.2A,di/dt=100A/μs
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
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ZXMP3F37DN8
Typical characteristics
T = 150°C
3.5V
4.5V
3V
10
2.5V
1
VGS
T = 25°C
0.1
0.1
1
2V
0.1
VGS
0.01
10
0.1
1
Output Characteristics
1
T = 25°C
3
RDS(on) Drain-Source On-Resistance (Ω)
Typical Transfer Characteristics
10
T = 25°C
VGS
2.5V
3V
1
3.5V
0.1
4V
10V
0.01
0.1
1
10
On-Resistance v Drain Current
© Diodes Incorporated 2008
ID = 7.1A
RDS(on)
1.2
1.0
0.8
VGS = VDS
0.6
0.4
-50
VGS(th)
ID = 250uA
0
50
100
Tj Junction Temperature (°C)
150
10
1
T = 150°C
T = 25°C
0.1
0.01
Vgs = 0V
1E-3
0.2
0.4
0.6
0.8
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
-ID Drain Current (A)
Issue 1 - August 2008
VGS = 10V
1.4
Normalised Curves v Temperature
-ISD Reverse Drain Current (A)
-ID Drain Current (A)
T = 150°C
Normalised RDS(on) and VGS(th)
1.6
-VGS Gate-Source Voltage (V)
10
-VDS Drain-Source Voltage (V)
VDS = 10V
2
3V
1
Output Characteristics
0.1
3.5V
2.5V
-VDS Drain-Source Voltage (V)
10
10V
10
-ID Drain Current (A)
-ID Drain Current (A)
10V
5
1.0
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ZXMP3F37DN8
Typical characteristics
C Capacitance (pF)
VGS = 0V
f = 1MHz
2000
1500
CISS
COSS
1000
CRSS
500
0
1
10
-VGS Gate-Source Voltage (V)
2500
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
10
9
8
7
6
5
4
3
2
1
0
ID = 7.1A
VDS = 15V
0
5
10
15
20
Q - Charge (nC)
25
30
35
Gate-Source Voltage v Gate Charge
Test circuits
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ZXMP3F37DN8
Package outline SO8
SO8 Package Information
DIM
Inches
Millimeters
DIM
Inches
Min.
Millimeters
Min.
Max.
Min.
Max.
Max.
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
U
0°
8°
0°
8°
E
0.150
0.157
3.80
4.00
h
0.010
0.020
0.25
0.50
L
0.016
0.050
0.40
1.27
-
-
-
-
-
0.050 BSC
Min.
Max.
1.27 BSC
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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ZXMP3F37DN8
Definitions
Product change
Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the
user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by
Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such
use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including
negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss
in the use of these circuit applications, under any circumstances.
Life support
Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
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The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in
writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating
to the products or services concerned.
Terms and Conditions
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when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office.
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Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes Zetex Semiconductors or one of our
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Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
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Diodes Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding
regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the
use of hazardous substances and/or emissions.
All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE
and ELV directives.
Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2008 Published by Diodes Incorporated
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