ZXMP3F37N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) (Ω) ID(A) -30 0.025 @ VGS=-10V -10.7 0.041 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for high efficiency power management applications. Features • • • • Low on-resistance Fast switching speed Low gate drive SO8 package Applications • DC-DC Converters • Power management functions • Disconnect switches • Motor control Ordering information Device ZXMP3F37N8TA Reel size (inches) Tape width (mm) Quantity per reel 7 12 500 S D S D S D G D Device marking ZXMP 3F37 Issue 1 - August 2008 © Diodes Incorporated 2008 1 www.zetex.com www.diodes.com ZXMP3F37N8 Absolute maximum ratings Parameter Symbol Limit Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGS ±20 V ID -8.5 V Continuous Drain current @ VGS= -10V; TA=25°C @ VGS= -10V; TA=70°C @ VGS= -10V; TA=25°C @ VGS= -10V; TL=25°C Pulsed Drain current (b) (b) -6.8 (a) -6.4 (d) -10.7 (c) Continuous Source current (Body diode) Pulsed Source current (Body diode) Power dissipation at TA =25°C Linear derating factor Power dissipation at TA =25°C Linear derating factor Power dissipation at TL =25°C Linear derating factor (b) (c) (a) (b) (d) Operating and storage temperature range IDM -39.5 A IS -4.4 A ISM -39.5 A PD 1.56 12.5 W mW/°C PD 2.8 22.2 W mW/°C PD 4.4 35.4 W mW/°C Tj, Tstg -55 to 150 °C Symbol Value Unit RθJA 80 °C/W RθJA 45 °C/W RθJL 28.26 °C/W Thermal resistance Parameter Junction to ambient Junction to ambient Junction to lead (a) (b) (d) NOTES: (a) (b) (c) (d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Mounted on FR4 PCB measured at t ≤ 10 sec. Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. Thermal resistance from junction to solder-point (at the end of the drain lead). Issue 1 - August 2008 © Diodes Incorporated 2008 2 www.zetex.com www.diodes.com ZXMP3F37N8 Thermal characteristics 100 1.6 Max Power Dissipation (W) -ID Drain Current (A) RDS(on) 10 Limited 1 DC 100m 1s 100ms 10m 10ms Single Pulse T amb=25°C 1m 100m 1ms 100µs 1 10 -VDS Drain-Source Voltage (V) 1.4 25mm x 25mm 1oz FR4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 T amb=25°C 60 50 D=0.5 40 30 20 Single Pulse D=0.2 D=0.05 10 0 100µ D=0.1 1m 10m 100m 1 10 100 Single Pulse T amb=25°C 10 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance © Diodes Incorporated 2008 100 120 140 160 100 1 100µ 1k Pulse Width (s) Issue 1 - August 2008 80 Derating Curve Maximum Power (W) Thermal Resistance (°C/W) 70 60 Temperature (°C) Safe Operating Area 80 40 Pulse Power Dissipation 3 www.zetex.com www.diodes.com ZXMP3F37N8 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Static Symbol Min. Drain-Source breakdown voltage V(BR)DSS -30 Zero Gate voltage Drain current IDSS Gate-Body leakage IGSS Gate-Source threshold voltage VGS(th) Static Drain-Source ( ) on-state resistance * RDS(on) Forward ( ) (†) Transconductance * gfs Input capacitance Typ. Max. Unit Conditions V ID = -250μA, VGS=0V -1.0 µA VDS=-30V, VGS=0V 100 nA VGS=±20V, VDS=0V -2.5 V ID= -250μA, VDS=VGS 0.025 0.041 Ω VGS= -10V, ID= -7.1A VGS= -4.5V, ID= -5.5A 18.6 S VDS= -15V, ID= -7.1A Ciss 1678 pF Output capacitance Coss 303 pF Reverse transfer capacitance Crss 178 pF Turn-on-delay time td(on) 3.5 ns Rise time tr 4.9 ns VDD= -15V, VGS= -10V Turn-off delay time td(off) 44 ns Fall time tf 28 ns ID= -1A RG ≅ 6.0Ω, Dynamic -1.3 (†) Switching VDS= -15V, VGS=0V f=1MHz (‡) (†) Gate charge Total Gate charge Qg 31.6 nC Gate-Source charge Qgs 4.3 nC Gate-Drain charge Qgd 6.2 nC * VSD -0.80 (‡) trr 16.2 ns Qrr 10 nC VDS= -15V, VGS= -10V ID= -7.1A Source–Drain diode Diode forward voltage Reverse recovery time ( ) Reverse recovery charge (‡) -1.2 V IS= -1.7A,VGS=0V IS= -2.2A,di/dt=100A/μs NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing Issue 1 - August 2008 © Diodes Incorporated 2008 4 www.zetex.com www.diodes.com ZXMP3F37N8 Typical characteristics T = 150°C 3.5V 4.5V -ID Drain Current (A) -ID Drain Current (A) 10V 3V 10 2.5V 1 VGS T = 25°C 10V 3.5V 3V 10 2.5V 1 2V 0.1 VGS 0.1 0.01 0.1 1 10 0.1 -VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics T = 150°C 1 T = 25°C 0.1 2 3 -VGS Gate-Source Voltage (V) RDS(on) Drain-Source On-Resistance (Ω) Typical Transfer Characteristics 10 T = 25°C VGS 2.5V 3V 1 3.5V 0.1 4V 10V 0.01 0.1 1 10 -ID Drain Current (A) On-Resistance v Drain Current Issue 1 - August 2008 © Diodes Incorporated 2008 VGS = 10V ID = 7.1A 1.4 RDS(on) 1.2 1.0 0.8 VGS = VDS 0.6 0.4 -50 VGS(th) ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature -ISD Reverse Drain Current (A) -ID Drain Current (A) VDS = 10V Normalised RDS(on) and VGS(th) 1.6 10 10 1 T = 150°C T = 25°C 0.1 0.01 Vgs = 0V 1E-3 0.2 0.4 0.6 0.8 1.0 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 www.zetex.com www.diodes.com ZXMP3F37N8 Typical characteristics C Capacitance (pF) VGS = 0V f = 1MHz 2000 1500 CISS COSS 1000 CRSS 500 0 1 10 -VGS Gate-Source Voltage (V) 2500 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 10 9 8 7 6 5 4 3 2 1 0 ID = 7.1A VDS = 15V 0 5 10 15 20 Q - Charge (nC) 25 30 35 Gate-Source Voltage v Gate Charge Test circuits Issue 1 - August 2008 © Diodes Incorporated 2008 6 www.zetex.com www.diodes.com ZXMP3F37N8 Package outline SO8 SO8 Package Information DIM Inches Millimeters DIM Inches Min. Millimeters Min. Max. Min. Max. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 U 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. 1.27 BSC Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 1 - August 2008 © Diodes Incorporated 2008 7 www.zetex.com www.diodes.com ZXMP3F37N8 Definitions Product change Diodes Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Zetex Semiconductors does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subject to Diodes Zetex terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes Incorporated or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/ or www.diodes.com Diodes Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Diodes Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: “Preview” Future device intended for production at some point. Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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