ETC ZXMP6A13FTA

ZXMP6A13F
60V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -60V; RDS(ON) = 0.400
ID =-1.1A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
SOT23
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC converters
• Power management functions
• Relay and solenoid driving
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP6A13FTA
7”
8mm
3000 units
ZXMP6A13FTC
13”
8mm
10000 units
DEVICE MARKING
Top View
• 7P6
ISSUE 2 - JULY 2004
1
ZXMP6A13F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
Gate Source Voltage
LIMIT
UNIT
-60
V
20
V
ID
-1.1
-0.8
-0.9
A
I DM
-4.0
A
IS
-1.2
A
V GS
Continuous Drain Current V GS =10V; T A =25°C
V GS =10V; T A =70°C
V GS =10V; T A =25°C
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(b)
(c)
(b)
(b)
(a)
I SM
-4.0
A
(a)
PD
625
5
mW
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
806
6.5
mW
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
Power Dissipation at T A =25°C
Linear Derating Factor
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient
(a)
R θJA
200
°C/W
Junction to Ambient
(b)
R θJA
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t ≤5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
ISSUE 2 - JULY 2004
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ZXMP6A13F
CHARACTERISTICS
ISSUE 2 - JULY 2004
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ZXMP6A13F
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
-60
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance (1)(3)
V GS(th)
(1)
V
I D =-250␮A, V GS =0V
-1
␮A
V DS =-60V, V GS =0V
100
nA
V GS =⫾20V, V DS =0V
-1.0
R DS(on)
0.400
0.600
V
I =-250␮A, V DS = V GS
⍀
⍀
V GS =-10V, I D =-0.9A
V GS =-4.5V, I D =-0.8A
V DS =-15V,I D =-0.9A
g fs
1.8
S
Input Capacitance
C iss
233
pF
Output Capacitance
C oss
17.4
pF
Reverse Transfer Capacitance
C rss
9.6
pF
Turn-On Delay Time
t d(on)
1.6
ns
Rise Time
tr
2.3
ns
Turn-Off Delay Time
t d(off)
13
ns
Fall Time
tf
5.8
ns
Gate Charge
Qg
2.4
nC
Total Gate Charge
Qg
5.1
nC
Gate-Source Charge
Q gs
0.7
nC
Gate-Drain Charge
Q gd
0.7
nC
V SD
-0.85
t rr
Q rr
DYNAMIC
D
(3)
SWITCHING
V DS =-30V, V GS =0V,
f=1MHz
(2) (3)
V DD =-30V, I D =-1A
R G 6.0⍀, V GS =-10V
V DS =-30V,V GS =-5V,
I D =-0.9A
V DS =-30V,V GS =-10V,
I D =-0.9A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
-0.95
V
T J =25°C, I S =-0.8A,
V GS =0V
22.6
ns
T J =25°C, I F =-0.9A,
di/dt= 100A/µs
23.2
nC
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JULY 2004
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ZXMP6A13F
TYPICAL CHARACTERISTICS
ISSUE 2 - JULY 2004
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ZXMP6A13F
TYPICAL CHARACTERISTICS
ISSUE 2 - JULY 2004
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ZXMP6A13F
PACKAGE OUTLINE
PAD LAYOUT
PACKAGE DIMENSIONS
Millimeters
DIM
Inches
Min
Max
Min
Max
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
0.055
C
ᎏ
1.10
ᎏ
D
0.37
0.53
F
0.085
0.15
G
1.90 NOM
Millimeters
DIM
Min
Max
H
0.33
K
0.01
0.043
L
0.015
0.021
M
0.0034
0.0059
0.075 NOM
Inches
Max
Max
0.51
0.013
0.020
0.10
0.0004
0.004
2.10
2.50
0.083
0.0985
0.45
0.64
0.018
0.025
N
0.95 NOM
0.0375 NOM
ᎏ
ᎏ
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© Zetex Semiconductors plc 2004
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United Kingdom
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[email protected]
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[email protected]
Telephone (44) 161 622 4444
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For the latest product information, log on to www.zetex.com
ISSUE 2 - JULY 2004
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