ZETEX ZXMP6A13GTA

ZXMP6A13G
60V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -60V: RDS(on) = 0.390 : ID = -2.3A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT223
FEATURES
· Low on-resistance
· Fast switching speed
· Low threshold
· Low gate drive
· SOT223 package
APPLICATIONS
· DC-DC converters
· Power management functions
· Relay and solenoid driving
PINOUT
· Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP6A13GTA
7”
12mm
1000 units
ZXMP6A13GTC
13”
12mm
4000 units
Top View
DEVICE MARKING
· ZXMP
6A13
ISSUE 2 - JULY 2004
1
ZXMP6A13G
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
-60
V
V GS
⫾20
V
Continuous Drain Current (V GS = -10V;
(V GS = -10V;
(V GS = -10V; T A =25°C)
ID
-2.3
-1.9
-1.7
A
Pulsed Drain Current (c)
I DM
-7.8
A
IS
-4.1
A
Gate-Source Voltage
T A =25°C) (b)
T A =70°C) (b)
(a)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(b)
(c)
I SM
-7.8
A
(a)
PD
2.0
16
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
3.9
31
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
Power Dissipation at T A =25°C
Linear Derating Factor
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient
(a)
R θJA
62.5
°C/W
Junction to Ambient
(b)
R θJA
32.2
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ISSUE 2 - JULY 2004
2
ZXMP6A13G
CHARACTERISTICS
ISSUE 2 - JULY 2004
3
ZXMP6A13G
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
-60
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
TYP.
MAX. UNIT
CONDITIONS
STATIC
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
V GS(th)
(1)
Forward Transconductance (1)(3)
V
I D =-250µA, V GS =0V
-1
␮A
V DS =-60V, V GS =0V
100
nA
-1.0
R DS(on)
0.390
0.595
V GS =⫾20V, V DS =0V
V
I =-250␮A, V DS = V GS
⍀
⍀
V GS =-10V, I D =-0.9A
V GS =-4.5V, I D =-0.8A
V DS =-15V,I D =-0.9A
g fs
1.8
S
Input Capacitance
C iss
233
pF
Output Capacitance
C oss
17.4
pF
Reverse Transfer Capacitance
C rss
9.6
pF
Turn-On Delay Time
t d(on)
1.6
ns
Rise Time
tr
2.3
ns
Turn-Off Delay Time
t d(off)
13
ns
Fall Time
tf
5.8
ns
Gate Charge
Qg
2.4
nC
Total Gate Charge
Qg
5.1
nC
Gate-Source Charge
Q gs
0.7
nC
Gate-Drain Charge
Q gd
0.7
nC
V SD
-0.85
t rr
Q rr
D
DYNAMIC (3)
SWITCHING
V DS =-30V, V GS =0V,
f=1MHz
(2) (3)
V DD =-30V, I D =-1A
R G 6.0⍀, V GS =-10V
V DS =-30V,V GS =-5V,
I D =-0.9A
V DS =-30V,V GS =-10V,
I D =-0.9A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
-0.95
V
T J =25⬚C, I S =-0.8A,
V GS =0V
22.6
ns
T J =25⬚C, I F =-0.9A,
di/dt= 100A/␮s
23.2
nC
NOTES:
(1) Measured under pulsed conditions. Width ⱕ300µ s. Duty cycle ⱕ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JULY 2004
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ZXMP6A13G
TYPICAL CHARACTERISTICS
ISSUE 2 - JULY 2004
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ZXMP6A13G
TYPICAL CHARACTERISTICS
ISSUE 2 - JULY 2004
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ZXMP6A13G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
© Zetex Semiconductors plc 2004
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ISSUE 2 - JULY 2004
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