A Product Line of Diodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current (VIN = 5V) 1.2 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6004DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level functionality independently per channel. The ZXMS6004DT8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. FEATURES • • • • • • • • • Compact dual package Low input current Logic Level Input (3.3V and 5V) Short circuit protection with auto restart Over voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input Protection (ESD) High continuous current rating ORDERING INFORMATION DEVICE PART MARK REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXMS6004DT8TA ZXMS 6004D 7 12 embossed 1,000 units ZXMS6004DT8 Document Number DS32245 Rev. 1 - 2 1 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated FUNCTIONAL BLOCK DIAGRAM D1/2 Over Voltage Protection dV/dt limitation IN1/2 Human body ESD protection Over temperature protection Logic Over current protection S1/2 APPLICATIONS AND INFORMATION • Two completely isolated independent channels • Especially suited for loads with a high in-rush current such as lamps and motors. • All types of resistive, inductive and capacitive loads in switching applications. • μC compatible power switch for 12V and 24V DC applications. • Automotive rated. • Replaces electromechanical relays and discrete circuits. • Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimise on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to selfprotect at low VDS. ZXMS6004DT8 Document Number DS32245 Rev. 1 - 2 2 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Continuous Drain-Source Voltage VDS 60 V Drain-Source Voltage for short circuit protection VDS(SC) 36 V Continuous Input Voltage VIN -0.5 ... +6 V Continuous Input Current IIN mA -0.2V≤VIN≤6V No limit VIN<-0.2V or VIN>6V │IIN │≤2 Operating Temperature Range Tj, -40 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Power Dissipation at TA =25°C (a)(d) PD 1.16 W 9.28 mW/°C 1.67 W 13.3 mW/°C 2.13 W 17 mW/°C Linear Derating Factor PD Power Dissipation at TA =25°C (a)(e) Linear Derating Factor PD Power Dissipation at TA =25°C (b)(d) Linear Derating Factor Pulsed Drain Current @ VIN=3.3V (c) IDM 2 A Pulsed Drain Current @ VIN=5V (c) IDM 2.5 A Continuous Source Current (Body Diode) (a) IS 1 A Pulsed Source Current (Body Diode) (c) ISM 5 A Unclamped single pulse inductive energy, Tj=25°C, ID=0.5A, VDD=24V EAS 210 mJ Electrostatic Discharge (Human Body Model) VESD 4000 V Charged Device Model VCDM 1000 V THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) RθJA 108 °C/W Junction to Ambient (a)(e) RθJA 75 °C/W Junction to Ambient (b)(d) RθJA 58.7 °C/W Junction to Case (f) RθJC 26.5 °C/W NOTES (a) For a dual device surface mounted on a 25mm x 25mm FR4 PCB single sided 1oz weight copper split down the middle on 1.6mm FR4 board, in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t ≤ 10sec (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs – pulse width limited by junction temperature. Refer to transient Thermal Impedance Graph. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. (f) Thermal resistance from junction to solder-point (at the end of the drain lead) ZXMS6004DT8 Document Number DS32245 Rev. 1 - 2 3 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated RECOMMENDED OPERATING CONDITIONS The ZXMS6004DT8 is optimised for use with µC operating from 3.3V and 5V supplies. Symbol VIN TA VIH VIL VP Description Input voltage range Ambient temperature range High level input voltage for MOSFET to be on Low level input voltage for MOSFET to be off Peripheral supply voltage (voltage to which load is referred) Min 0 -40 3 0 0 Max 5.5 125 5.5 0.7 36 Units V °C V V V Max Power Dissipation (W) ID Drain Current (A) CHARACTERISTICS Limited by Over-Current Protection Limited by RDS(on) 1 DC 1s 100m 10m 100ms Single Pulse T amb=25°C See Note (a)(d) 10ms 1ms Limit of s/c protection 1 10 1.6 1.4 2 active die 1.2 1.0 0.8 0.6 0.4 1 active die 0.2 0.0 0 25 VDS Drain-Source Voltage (V) 100 Tamb=25°C See Note (a)(d) 80 D=0.5 60 40 Single Pulse D=0.2 D=0.05 20 D=0.1 0 100µ 1m 10m 100m 1 10 125 150 100 1k Single Pulse T amb=25°C See Note (a)(d) 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document Number DS32245 Rev. 1 - 2 100 100 Pulse Width (s) ZXMS6004DT8 75 Derating Curve Maximum Power (W) Thermal Resistance (°C/W) Safe Operating Area 120 50 Temperature (°C) 4 of 9 www.diodes.com Pulse Power Dissipation June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN TYP MAX UNIT CONDITIONS Drain-Source Clamp Voltage VDS(AZ) 60 65 70 V ID=10mA Off state Drain Current IDSS 500 nA VDS=12V, VIN=0V Off state Drain Current IDSS 1 uA VDS=36V, VIN=0V Input Threshold Voltage VIN(th) 1 1.5 V VDS=VGS, ID=1mA Input Current IIN 60 100 μA VIN=+3V Input Current IIN 120 200 μA VIN=+5V 220 μA VIN=+5V Static Characteristics 0.7 Input Current while over temperature active Static Drain-Source On-State Resistance RDS(on) 400 600 mΩ VIN=+3V, ID=0.5A Static Drain-Source On-State Resistance RDS(on) 350 500 mΩ VIN=+5V, ID=0.5A Continuous Drain Current (a)(e) ID 0.9 A VIN=3V; TA=25°C Continuous Drain Current (a)(e) ID 1.0 A VIN=5V; TA=25°C Continuous Drain Current (a)(d) ID 1.1 A VIN=3V; TA=25°C Continuous Drain Current (a)(d) ID 1.2 A VIN=5V; TA=25°C Current Limit (g) ID(LIM) 0.7 1.7 A VIN=+3V, Current Limit (g) ID(LIM) 1 2.2 A VIN=+5V VDD=12V, ID=0.5A, VGS=5V Dynamic Characteristics Turn On Delay Time td(on) 5 μs Rise time tr 10 μs Turn Off Delay Time td(off) 45 μs Fall Time ff 15 μs Notes: (g) The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. ZXMS6004DT8 Document Number DS32245 Rev. 1 - 2 5 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated PARAMETER SYMBOL MIN TYP MAX UNIT TJT 150 175 °C 10 °C CONDITIONS Over-temperature Protection Thermal Overload Trip Temperature (h) Thermal hysteresis (h) Note: (h) Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods.. ZXMS6004DT8 Document Number DS32245 Rev. 1 - 2 6 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated TYPICAL CHARACTERISTICS VIN 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 2 1 IIN Input Current (μA) ID Drain Current (A) 120 TA = 25°C 3 0 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 VDS Drain-Source Voltage (V) 4 5 1.4 1.4 ID = 0.5A 1.2 1.0 0.8 0.6 TJ = 150°C 0.4 0.2 0.0 1.5 TJ = 25°C 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VTH Threshold Voltage (V) RDS(on) On-Resistance (Ω) 3 Input Current vs Input Voltage Typical Output Characteristic VIN = VDS 1.3 ID = 1mA 1.2 1.1 1.0 0.9 0.8 -75 -50 -25 0 25 50 75 100 125 150 TJ Junction Temperature (°C) VIN Input Voltage (V) On-Resistance vs Input Voltage Threshold Voltage vs Temperature 10 0.9 0.8 0.7 VIN = 3V 0.6 0.5 0.4 VIN = 5V 0.3 0.2 -75 -50 -25 0 25 50 75 100 125 150 IS Source Curent (A) RDS(on) On-Resistance (Ω) 2 VIN Input Voltage (V) TJ=150°C 1 TJ=25°C 0.1 0.01 0.4 On-Resistance vs Temperature ZXMS6004DT8 Document Number DS32245 Rev. 1 - 2 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) TJ Junction Temperature (°C) Reverse Diode Characteristic 7 of 9 www.diodes.com June 2010 © Diodes Incorporated Drain-Source Voltage (V) Drain-Source Voltage (V) A Product Line of Diodes Incorporated 12 ID=500mA 10 VDS 8 6 VIN 4 2 0 -50 0 50 100 150 200 250 300 12 ID=500mA VDS 10 8 6 4 VIN 2 0 -50 0 50 100 150 200 250 300 Time (μs) Time (μs) Switching Speed Switching Speed ID Drain Current (A) 4.0 VIN = 5V 3.5 VDS = 15V 3.0 RD = 0Ω 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 Time (ms) Typical Short Circuit Protection ZXMS6004DT8 Document Number DS32245 Rev. 1 - 2 8 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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