A Product Line of Diodes Incorporated ZXMS6004FF 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current (VIN = 5V) 1.3 A Clamping energy 90mJ Description The ZXMS6004FF is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6004FF is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Features • Compact high power dissipation package • Low input current • Logic Level Input (3.3V and 5V) • Short circuit protection with auto restart • Over voltage protection (active clamp) • Thermal shutdown with auto restart • Over-current protection • Input Protection (ESD) • High continuous current rating S D IN Pinout - top view Ordering information Device Part mark Reel size (inches) Tape width (mm) Quantity per reel 1K6 7 12 embossed 3,000 units ZXMS66004FFTA Issue 1 - December 2008 © Diodes Incorporated, 2008 1 www.zetex.com www.diodes.com ZXMS6004FF Functional block diagram D Over-voltage Protection dV/dt Limitation IN ESD Protection Over-temperature Protection Logic Over-current Protection S Application information • Especially suited for loads with a high in-rush current such as lamps and motors. • All types of resistive, inductive and capacitive loads in switching applications. • μC compatible power switch for 12V and 24V DC applications. • Automotive rated. • Replaces electromechanical relays and discrete circuits. • Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimise on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low VDS. Issue 1 - December 2008 © Diodes Incorporated, 2008 2 www.zetex.com www.diodes.com ZXMS6004FF Absolute maximum ratings Parameter Symbol Limit Unit Continuous Drain-Source voltage VDS 60 V Drain-Source voltage for short circuit protection VDS(SC) 36 V Continuous input voltage VIN -0.5 ... +6 V Continuous input current IIN mA -0.2V≤VIN≤6V No limit VIN<-0.2V or VIN>6V Operating temperature range │IIN │≤2 Storage temperature range Power dissipation at TA =25°C (a) Linear derating factor Power dissipation at TA =25°C (b) T j, -40 to +150 °C Tstg -55 to +150 °C PD 0.83 W 6.66 mW/°C 1.5 W 12.0 mW/°C PD Linear derating factor Pulsed drain current @ VIN=3.3V IDM 2 A Pulsed drain current @ VIN=5V IDM 2.5 A Continuous source current (Body Diode) (a) IS 1 A Pulsed dource current (Body Diode) ISM 5 A Unclamped single pulse inductive energy, Tj=25°C, ID=0.5A, VDD=24V Electrostatic discharge (Human body model) EAS 90 mJ VESD 4000 V Charged device model VCDM 1000 V Value Unit Thermal resistance Parameter Symbo Junction to ambient (a) RθJA 150 °C/W Junction to ambient (b) RθJA 83 °C/W RθJC 44 °C/W Junction to case (c) NOTES (a) For a device surface mounted on a 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. (b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board in still air conditions. (c) Thermal resistance from junction to the mounting surface of the drain pin. Issue 1 - December 2008 © Diodes Incorporated, 2008 3 www.zetex.com www.diodes.com ZXMS6004FF Recommended operating conditions The ZXMS6004FF is optimised for use with µC operating from 3.3V and 5V supplies. Symbol VIN TA VIH VIL VP Description Min Max Units Input voltage range Ambient temperature range High level input voltage for MOSFET to be on Low level input voltage for MOSFET to be off Peripheral supply voltage (voltage to which load is referred) 0 -40 3 0 0 5.5 125 5.5 0.7 36 V °C V V V Characteristics Issue 1 - December 2008 © Diodes Incorporated, 2008 4 www.zetex.com www.diodes.com ZXMS6004FF Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Min Typ Max Unit Conditions Drain-Source clamp voltage VDS(AZ) 60 65 70 V Off-state drain Ccrrent IDSS 500 nA VDS=12V, VIN=0V Off-state drain current IDSS 1 μA VDS=36V, VIN=0V Input threshold voltage VIN(th) VDS=VGS, ID=1mA Input current Input current Static Characteristics Input current while over temperature active Static Drain-Source on-state resistance Static Drain-Source on-state resistance Continuous drain current(a) 0.7 ID=10mA 1 1.5 V IIN 60 100 μA VIN=+3V IIN 120 200 μA VIN=+5V 220 μA VIN=+5V RDS(on) 400 600 mΩ VIN=+3V, ID=0.5A RDS(on) 350 500 mΩ VIN=+5V, ID=0.5A ID 0.9 A VIN=3V; TA=25°C ID 1.0 A VIN=5V; TA=25°C Continuous drain current (b) ID 1.2 A VIN=3V; TA=25°C Continuous drain current (b) ID 1.3 A VIN=5V; TA=25°C Current limit ID(LIM) 0.7 1.7 A VIN=+3V, ID(LIM) 1 2.2 A VIN=+5V Continuous drain cCurrent (a) Current limit (c) Dynamic characteristics Turn-on delay time td(on) 5 μs VDD=12V, ID=0.5A, Rise time tr 10 μs VGS=5V Turn-off delay time td(off) 45 μs Fall time ff 15 μs Notes: (d) The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. Issue 1 - December 2008 © Diodes Incorporated, 2008 5 www.zetex.com www.diodes.com ZXMS6004FF Electrical characteristics - continued Parameter Symbol Min Typ Max Unit TJT 150 175 °C 10 °C Conditions Over-temperature protection Thermal overload trip (a) temperature Thermal hysteresis (a) Note: (a) Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods.. Issue 1 - December 2008 © Diodes Incorporated, 2008 6 www.zetex.com www.diodes.com ZXMS6004FF Typical characteristics Issue 1 - December 2008 © Diodes Incorporated, 2008 7 www.zetex.com www.diodes.com ZXMS6004FF Issue 1 - December 2008 © Diodes Incorporated, 2008 8 www.zetex.com www.diodes.com ZXMS6004FF Package information - SOT23F c D b e1 b e L1 L E E1 b A1 R A Dim. Millimeters Inches Min. Max. Min. Max. A 0.80 1.00 0.0315 0.0394 A1 0.00 0.10 0.00 b 0.35 0.45 c 0.10 D 2.80 e e1 Millimeters Inches Min. Max. Min. Max. E 2.30 2.50 0.0906 0.0984 0.0043 E1 1.50 1.70 0.0590 0.0669 0.0153 0.0161 L 0.48 0.68 0.0189 0.0268 0.20 0.0043 0.0079 L1 0.30 0.50 0.0153 0.0161 3.00 0.1102 0.1181 R 0.05 0.15 0.0019 0.0059 O 0° 12° 0° 12° - - - - - 0.95 ref 1.80 Dim. 2.00 0.0374 ref 0.0709 0.0787 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1 - December 2008 © Diodes Incorporated, 2008 9 www.zetex.com www.diodes.com ZXMS6004FF Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office. Quality of product Diodes Zetex Semconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes Inc. or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com Diodes Inc. does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Diodes Inc. is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: “Preview” Future device intended for production at some point. Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Sales offices The Americas Europe Taiwan Shanghai Shenzhen Korea 3050 E. 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