DIODES ZXT12N50DXTA

ZXT12N50DX
SuperSOT4™
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
VCEO=50V; RSAT = 45m ; IC= 3A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
MSOP8
FEATURES
•
Extremely Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
•
hFE characterised up to 5A
•
IC=3A Continuous Collector Current
•
MSOP8 package
C2
C1
B1
B2
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Power switches
•
Motor control
E1
ZXT12N50DXTA
7
12mm embossed
1000 units
ZXT12N50DXTC
13
12mm embossed
4000 units
2
Top View
DEVICE MARKING
T12N50DX
ISSUE 1 - MARCH 2000
1
8
B2
7
QUANTITY
PER REEL
C1
6
TAPE WIDTH
(mm)
C1
C2
5
REEL SIZE
(inches)
E2
3
DEVICE
B1
4
E1
ORDERING INFORMATION
1
E2
C2
ZXT12N50DX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V CBO
100
V
Collector-Emitter Voltage
V CEO
50
V
Emitter-Base Voltage
V EBO
7.5
V
Peak Pulse Current
I CM
10
A
Continuous Collector Current
IC
3
A
Base Current
IB
500
mA
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
PD
0.87
6.9
W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
PD
1.04
8.3
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R θJA
143
°C/W
Junction to Ambient (b)(d)
R θJA
100
°C/W
Junction to Ambient (a)(e)
R θJA
120
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - MARCH 2000
2
ZXT12N50DX
CHARACTERISTICS
ISSUE 1 - MARCH 2000
3
ZXT12N50DX
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V (BR)CBO
100
Collector-Emitter Breakdown
Voltage
V (BR)CEO
Emitter-Base Breakdown Voltage
V (BR)EBO
Collector Cut-Off Current
I CBO
Emitter Cut-Off Current
UNIT
CONDITIONS.
200
V
I C =100␮A
50
65
V
I C =10mA*
7.5
8.5
V
I E =100␮A
100
nA
V CB =80V
I EBO
100
nA
V EB =6V
Collector Emitter Cut-Off Current
I CES
100
nA
V CES =80V
Collector-Emitter Saturation
Voltage
V CE(sat)
13
120
250
175
mV
mV
mV
mV
I C =0.1A, I B =10mA*
I C =1A, I B =10mA*
I C =3A, I B =50mA*
I C =3A, I B =300mA*
Base-Emitter Saturation Voltage
V BE(sat)
0.9
0.95
V
I C =3A, I B =50mA*
Base-Emitter Turn-On Voltage
V BE(on)
0.83
0.9
V
I C =3A, V CE =2V*
Static Forward Current Transfer
Ratio
h FE
Transition Frequency
fT
Output Capacitance
C obo
Turn-On Time
Turn-Off Time
11
95
190
135
250
300
150
50
400
450
250
100
MAX.
I C =10mA, V CE =2V*
I C =1A, V CE =2V*
I C =3A, V CE =2V*
I C =5A, V CE =2V*
900
132
MHz
I C =50mA, V CE =10V
f=50MHz
26
pF
V CB =10V, f=1MHz
t (on)
115
ns
t (off)
1000
ns
V CC =10V, I C =1A
I B1 =I B2 =20mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 1 - MARCH 2000
4
ZXT12N50DX
TYPICAL CHARACTERISTICS
ISSUE 1 - MARCH 2000
5
ZXT12N50DX
PAD LAYOUT DETAILS
PACKAGE DIMENSIONS
D
6 5
2
3 4
E
H
8 7
1
eX6
θ°
A1
B
L
C
Conforms to JEDEC MO-187 Iss A
DIM
Millimetres
Inches
MIN
MIN
A
MAX
1.10
MAX
0.043
A1
0.05
0.15
0.002
0.006
B
0.25
0.40
0.010
0.016
C
0.13
0.23
0.005
0.009
D
2.90
3.10
0.114
0.122
e
0.65
BSC
0.0256
BSC
E
2.90
3.10
0.114
0.122
H
4.90
BSC
0.193
BSC
L
0.40
0.70
0.016
0.028
q°
0°
6°
0°
6°
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (631) 543-7100
Fax: (631) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
© Zetex plc 2000
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - MARCH 2000
6