ZXT13P12DE6 SuperSOT4™ 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6 FEATURES • Extremely Low Equivalent On Resistance • Extremely Low Saturation Voltage • hFE characterised up to 15A • IC=4A Continuous Collector Current • SOT23-6 package APPLICATIONS • DC - DC Converters • Power Management Functions • Power switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXT13P12DE6TA 7 8mm embossed 3000 units ZXT13P12DE6TC 13 8mm embossed 10000 units C C C C B E Top View DEVICE MARKING P12D ISSUE 1 - DECEMBER 1999 1 ZXT13P12DE6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO -20 V Collector-Emitter Voltage V CEO -12 V Emitter-Base Voltage V EBO -7.5 V Peak Pulse Current I CM -15 A Continuous Collector Current IC -4 A Base Current IB -500 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 1.7 13.6 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 73 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. ISSUE 1 - DECEMBER 1999 2 ZXT13P12DE6 TYPICAL CHARACTERISTICS 1.2 Max Power Dissipation (W) IC Collector Current (A) 10 DC 1 1s 100ms 10ms 100m 1ms 100µs Single Pulse Tamb=25°C 10m 100m 1 10 VCE Collector-Emitter Voltage (V) Thermal Resistance (°C/W) 100 80 D=0.5 Single Pulse D=0.2 D=0.05 20 D=0.1 0 100µ 1m 10m 100m 1 10 0.6 0.4 0.2 0.0 0 20 40 60 80 100 Derating Curve 120 40 0.8 Temperature (°C) Safe Operating Area 60 1.0 100 1k Pulse Width (s) Transient Thermal Impedance ISSUE 1 - DECEMBER 1999 3 120 140 160 ZXT13P12DE6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO -20 Collector-Emitter Breakdown Voltage V (BR)CEO Emitter-Base Breakdown Voltage V (BR)EBO Collector Cut-Off Current I CBO Emitter Cut-Off Current UNIT CONDITIONS. -33 V I C =-100A -12 -25 V I C =-10mA* -7.5 -8.5 V I E =-100A -100 nA V CB =-16V I EBO -100 nA V EB =-6V Collector Emitter Cut-Off Current I CES -100 nA V CES =-16V Collector-Emitter Saturation Voltage V CE(sat) -10 -90 -175 -250 -175 mV mV mV mV mV I C =-0.1A, I B =-10mA* I C =-1A, I B =-10mA* I C =-3A, I B =-50mA* I C =-4A, I B =-50mA* I C =-4A, I B =-400mA* Base-Emitter Saturation Voltage V BE(sat) -1.0 V I C =-4A, I B =-50mA* Base-Emitter Turn-On Voltage V BE(on) -0.9 V I C =-4A, V CE =-2V* Static Forward Current Transfer Ratio h FE Transition Frequency fT 55 MHz I C =-50mA, V CE =-10V f=50MHz Output Capacitance C obo 115 pF V CB =-10V, f=1MHz Turn-On Time t (on) 70 ns Turn-Off Time t (off) 265 ns V CC =-10V, I C =-3A I B1 =I B2 =-60mA -7.5 -68 -135 -200 -150 300 300 200 20 500 450 300 30 MAX. *Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% ISSUE 1 - DECEMBER 1999 4 I C =-10mA, V CE =-2V* I C =-1A, V CE =-2V* I C =-4A, V CE =-2V* I C =-15A, V CE =-2V* 900 ZXT13P12DE6 TYPICAL CHARACTERISTICS 0.25 IC/IB=50 Tamb=25°C 0.20 VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=100 10m IC/IB=50 10m 25°C 0.10 0.05 IC/IB=10 1m 1m 100°C 0.15 100m 1 -55°C 0.00 1m 10 10m 100m 1 IC Collector Current (A) IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC 1.6 VCE=2V 1.0 1.2 -55°C 1.0 0.8 25°C 0.6 0.4 10m 100m 1 10 100°C 1m 1.0 VCE=2V 0.8 -55°C 100m VBE(SAT) v IC 25°C 0.6 100°C 0.4 10m 100m 1 IC Collector Current (A) 10m 1 IC Collector Current (A) hFE v IC VBE(ON) (V) 25°C 0.6 0.4 IC Collector Current (A) 1m 0.8 -55°C 0.2 0.0 1m IC/IB=50 100°C VBE(SAT) (V) Normalised Gain 1.4 10 10 VBE(ON) v IC ISSUE 1 - DECEMBER 1999 5 10 ZXT13P12DE6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 A1 DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF e1 1.90 REF L 0° 0.037 REF 0.074 REF 10° 0° 10° Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide © Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - DECEMBER 1999 6