ZXT849K 30V NPN LOW SATURATION TRANSISTOR IN D-PAK SUMMARY BVCEO = 30V : RSAT = 33m typical; IC = 7A DESCRIPTION Packaged in the D-Pak outline this high current high performance 30V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES DPAK • 7 amps continuous current • Up to 20 amps peak current • Low equivalent on resistance • Low saturation voltages • Excellent hFE performance up to 20 amps APPLICATIONS • DC - DC converters • DC - DC modules • Power switches • Motor control • Automotive circuits PINOUT ORDERING INFORMATION DEVICE ZXT849KTC REEL SIZE TAPE WIDTH QUANTITY PER REEL 13” 16mm 2500 units/reel DEVICE MARKING TOP VIEW • ZXT849 ISSUE 2 - DECEMBER 2003 1 SEMICONDUCTORS ZXT849K ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO 80 V Collector-emitter voltage BV CER 80 V Collector-emitter voltage BV CEO 30 V Emitter-base voltage BV EBO 7 V Peak pulse current Continuous collector current (b) I CM 20 A IC 7 A Base current IB 0.5 A Power dissipation at T A =25°C (a) Linear derating factor PD Power dissipation at T A =25°C (b) Linear derating factor PD Power dissipation at T A =25°C (c) PD Linear derating factor T j , T stg Operating and storage temperature range 2.1 W 16.8 mW/°C 3.2 W 25.6 mW/°C 4.2 W 33.6 mW/°C -55 to +150 °C THERMAL RESISTANCE PARAMETER VALUE UNIT R ⍜JA 59 °C/W Junction to ambient (b) R ⍜JA 39 °C/W Junction to ambient (c) R ⍜JA 30 °C/W Junction to ambient SYMBOL (a) NOTES (a) (For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions. (c) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper in still air conditions. ISSUE 2 - DECEMBER 2003 SEMICONDUCTORS 2 ZXT849K TYPICAL CHARACTERISTICS ISSUE 2 - DECEMBER 2003 3 SEMICONDUCTORS ZXT849K ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO 80 125 V I C =100A Collector-emitter breakdown voltage BV CER 80 125 V I C =1A, R BE =ⱕ1k⍀ Collector-emitter breakdown voltage BV CEO 30 40 V I C =10mA* Emitter-base breakdown voltage BV EBO 7 8 V I E =100A Collector cut-off current I CBO 20 nA V CB =70V Collector cut-off current I CER 20 nA Emitter cut-off current I EBO V CB =70V, R BE =ⱕ1k⍀ V EB =6V Collector-emitter saturation voltage V CE(SAT) Base-emitter saturation voltage V BE(SAT) Base-emitter turn-on voltage V BE(ON) Static forward current transfer ratio H FE Transition frequency 10 nA 27 40 mV I C =0.5A, I B =20mA* 55 80 mV IC=1A, IB=20mA* 115 180 mV IC=2A, IB=20mA* 230 280 mV IC=7A, IB=350mA* 1.04 1.15 mV 0.93 1.1 mV I C =7A, I B =350mA* I C =7A, V CE =1V* 100 190 100 200 100 165 40 90 100 fT MAX. UNIT CONDITIONS I C =10mA, V CE =1V* IC=1A, VCE=1V* 300 IC=7A, VCE=1V* IC=20A, VCE=2V* MHz I C =100mA, V CE =10V f=50MHz Output capacitance C OBO 75 pF V CB =10V, f=1MHz* Switching times t ON 45 nS I C =1A, V CC =10V, t OFF 630 nS I B1 =I B2 =100mA * Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%. ISSUE 2 - DECEMBER 2003 SEMICONDUCTORS 4 ZXT849K TYPICAL CHARACTERISTICS ISSUE 2 - DECEMBER 2003 5 SEMICONDUCTORS ZXT849K PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS DIM Millimeters Inches DIM Millimeters Min Max Inches Min Max Min Max A 2.18 2.38 0.086 0.094 e A1 ᎏ 0.127 0.005 H 9.40 10.41 0.370 0.410 b 0.635 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.762 1.114 0.030 0.045 L1 2.30 BSC 2.74 REF Max 0.090 BSC 0.108 REF b3 5.20 5.46 0.205 0.215 L2 c 0.457 0.609 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.457 0.584 0.018 0.023 L4 0.635 1.01 0.025 0.040 0.245 0.060 D 5.97 6.22 0.235 D1 5.20 ᎏ 0.205 E 6.35 6.73 0.250 E1 4.32 ᎏ 0.170 0.265 0.051 BSC Min 0.020 BSC L5 1.14 1.52 0.045 ⍜1⬚ 0⬚ 10⬚ 0⬚ 10⬚ ⍜⬚ 0⬚ 15⬚ 0⬚ 15⬚ © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - DECEMBER 2003 SEMICONDUCTORS 6