ZXTDC3M832 MPPS™ Miniature Package Power Solutions DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN VCEO = 50V; RSAT = 68m ; C = 4A VCEO =-40V; RSAT = 104m ; C = -3A PNP DESCRIPTION Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline, these new 4th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions. Additionally users gain several other key benefits: Performance capability equivalent to much larger packages 3mm x 2mm (Dual die) MLP Improved circuit efficiency & power levels PCB area and device placement savings Lower package height (nom 0.9mm) C1 C2 Reduced component count FEATURES • Low Equivalent On Resistance B1 B2 • Extremely Low Saturation Voltage (100mV @1A--NPN) • hFE characterised up to 6A E2 • IC=4A Continuous Collector Current E1 • 3mm x 2mm MLP APPLICATIONS • DC - DC Converters • Charging circuits PINOUT • Power switches • Motor control • CCFL Backlighting ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXTDC3M832TA 7 ⴕⴕ 8mm 3000 ZXTDC3M832TC 13ⴕ ⴕ 8mm 10000 3mm x 2mm MLP underside view DEVICE MARKING DC3 ISSUE 1 - JUNE 2002 1 ZXTDC3M832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage V CBO 100 -50 V Collector-Emitter Voltage V CEO 50 -40 V Emitter-Base Voltage V EBO 7.5 -7.5 V Peak Pulse Current I CM 6 -4 A Continuous Collector Current (a)(f) IC 4 -3 A Base Current IB 1000 mA Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.5 12 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2.45 19.6 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 1 8 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 1.13 9 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.7 13.6 W mW/°C Power Dissipation at TA=25°C (e)(g) Linear Derating Factor PD 3 24 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(f) R θJA 83.3 °C/W Junction to Ambient (b)(f) R θJA 51 °C/W Junction to Ambient (c)(f) R θJA 125 °C/W Junction to Ambient (d)(f) R θJA 111 °C/W Junction to Ambient (d)(g) R θJA 73.5 °C/W Junction to Ambient (e)(g) R θJA 41.7 °C/W Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW. ISSUE 1 - JUNE 2002 2 ZXTDC3M832 TYPICAL CHARACTERISTICS VCE(SAT) Limited 1 IC Collector Current (A) IC Collector Current (A) 10 10 DC 1s 100ms 0.1 10ms 1ms Note (a)(f) 0.01 100us 1 DC 1s 100ms 0.1 10ms 1 10 1ms Note (a)(f) 0.01 Single Pulse, Tamb=25°C 0.1 VCE(SAT) Limited 100us Single Pulse, Tamb=25°C 0.1 100 1 10 VCE Collector-Emitter Voltage (V) VCE Collector-Emitter Voltage (V) PNP Safe Operating Area NPN Safe Operating Area Max Power Dissipation (W) Thermal Resistance (°C/W) 3.5 Note (a)(f) 80 60 D=0.5 40 Single Pulse D=0.2 20 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k 1.0 1oz Cu Note (d)(f) 0.5 0.0 0 25 50 75 100 125 Derating Curve 2oz copper Note (g) Thermal Resistance (°C/W) PD Dissipation (W) 1oz Cu Note (d)(g) 1.5 Transient Thermal Impedance 2oz copper Note (f) 2.0 2oz Cu Note (a)(f) 2.0 Temperature (°C) Tamb=25°C Tj max=150°C Continuous 2.5 2.5 Pulse Width (s) 3.5 3.0 Tamb=25°C 2oz Cu Note (e)(g) 3.0 1.5 1.0 1oz copper Note (f) 0.5 0.0 0.1 1 1oz copper Note (g) 10 100 Board Cu Area (sqcm) 225 200 175 150 125 100 75 50 25 0 0.1 150 1oz copper Note (f) 1oz copper Note (g) 2oz copper Note (f) 2oz copper Note (g) 1 10 100 Board Cu Area (sqcm) Thermal Resistance v Board Area Power Dissipation v Board Area ISSUE 1 - JUNE 2002 3 ZXTDC3M832 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO 100 190 MAX. V I C =100A Collector-Emitter Breakdown Voltage V (BR)CEO 50 65 V I C =10mA* Emitter-Base Breakdown Voltage V (BR)EBO 7.5 8.2 V I E =100A Collector Cut-Off Current I CBO 25 nA V CB =80V Emitter Cut-Off Current I EBO 25 nA V EB =6V Collector Emitter Cut-Off Current I CES 25 nA V CES =40V Collector-Emitter Saturation Voltage V CE(sat) 10 70 145 115 225 270 20 100 200 220 300 320 mV mV mV mV mV mV I C =0.1A, I B =10mA* I C =1A, I B =50mA* I C =1A, I B =10mA* I C =2A, I B =50mA* I C =3A, I B =100mA* I C =4A, I B =200mA* Base-Emitter Saturation Voltage V BE(sat) 1.00 1.05 V I C =4A, I B =200mA* Base-Emitter Turn-On Voltage V BE(on) 0.94 1.00 V Static Forward Current Transfer Ratio h FE 200 300 200 100 400 450 400 225 40 I C =4A, V CE =2V* I C =10mA, V CE =2V* I C =0.2A, V CE =2V* I C =1A, V CE =2V* I C =2A, V CE =2V* I C =6A, V CE =2V* Transition Frequency fT 100 165 MHz I C =50mA, V CE =10V f=100MHz Output Capacitance C obo 12 pF V CB =10V, f=1MHz Turn-On Time t (on) 170 20 ns Turn-Off Time t (off) 750 ns V CC =10V, I C =1A I B1 =I B2 =10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ISSUE 1 - JUNE 2002 4 ZXTDC3M832 NPN CHARACTERISTICS 0.25 IC/IB=50 Tamb=25°C 0.20 10m IC/IB=100 VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=50 10m 100m 1 0.00 1m 10 IC Collector Current (A) VCE(SAT) v IC 100°C 1.0 0.4 180 0.2 0.0 1m VBE(SAT) (V) 270 -55°C 90 10m 100m hFE v IC VCE=2V VBE(ON) (V) 0.8 -55°C 0.6 25°C 100°C 10m 100m 1 IC Collector Current (A) 0.6 10 25°C 100°C 10m 100m IC Collector Current (A) VBE(SAT) v IC 1.0 1m 1 -55°C 1m IC Collector Current (A) 0.4 10 0.4 0 10 1 1 0.8 360 0.6 100m IC/IB=50 540 450 25°C 10m IC Collector Current (A) 1.0 Typical Gain (hFE) Normalised Gain VCE=2V 0.8 -55°C VCE(SAT) v IC 630 1.2 25°C 0.10 0.05 IC/IB=10 1m 1m 100°C 0.15 10 VBE(ON) v IC ISSUE 1 - JUNE 2002 5 ZXTDC3M832 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO -50 -80 MAX. V I C =-100A Collector-Emitter Breakdown Voltage V (BR)CEO -40 -70 V I C =-10mA* Emitter-Base Breakdown Voltage V (BR)EBO -7.5 -8.5 V I E =-100A Collector Cut-Off Current I CBO -25 nA V CB =-40V Emitter Cut-Off Current I EBO -25 nA V EB =-6V Collector Emitter Cut-Off Current I CES -25 nA V CES =-32V Collector-Emitter Saturation Voltage V CE(sat) -25 -150 -195 -210 -260 -40 -220 -300 -300 -370 mV mV mV mV mV I C =-0.1A, I B =-10mA* I C =-1A, I B =-50mA* I C =-1.5A, I B =-100mA* I C =-2A, I B =-200mA* I C =-2.5A, I B =-250mA* Base-Emitter Saturation Voltage V BE(sat) -0.97 -1.05 V I C =-2.5A, I B =-250mA* Base-Emitter Turn-On Voltage V BE(on) -0.89 -0.95 V Static Forward Current Transfer Ratio h FE 300 300 180 60 12 480 450 290 130 22 Transition Frequency fT 150 190 I C =-2.5A, V CE =-2V* I C =-10mA, V CE =-2V* I C =-0.1A, V CE =-2V* I C =-1A, V CE =-2V* I C =-1.5A, V CE =-2V* I C =-3A, V CE =-2V* MHz 25 I C =-50mA, V CE =-10V f=100MHz Output Capacitance C obo 19 pF V CB =-10V, f=1MHz Turn-On Time t (on) 40 ns Turn-Off Time t (off) 435 ns V CC =-15V, I C =-0.75A I B1 =I B2 =10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ISSUE 1 - JUNE 2002 6 ZXTDC3M832 PNP CHARACTERISTICS 1 0.25 IC/IB=50 Tamb=25°C VCE(SAT) (V) VCE(SAT) (V) 0.20 100m I /I =100 C B IC/IB=50 10m 1m 0.15 0.10 IC/IB=10 10m 100m 0.00 1m 1 IC Collector Current (A) 630 VCE=2V 100°C 1.0 360 270 180 -55°C 90 0.2 10m 100m 0 1 hFE v IC VBE(ON) (V) 1 IC/IB=50 VCE=2V -55°C 0.6 25°C 0.4 100°C 10m 100m -55°C 0.6 25°C 100°C 0.4 10m 100m 1 IC Collector Current (A) VBE(ON) v IC ISSUE 1 - JUNE 2002 7 1 IC Collector Current (A) VBE(SAT) v IC 0.8 0.2 1m 100m 0.8 1m IC Collector Current (A) 1.0 VBE(SAT) (V) 450 25°C 0.6 0.0 1m 10m IC Collector Current (A) 540 1.0 0.4 -55°C VCE(SAT) v IC Typical Gain (hFE) Normalised Gain 1.4 0.8 25°C 0.05 VCE(SAT) v IC 1.2 100°C ZXTDC3M832 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE DIMENSIONS MILLIMETRES DIM INCHES MILLIMETRES DIM MIN. MAX. MIN. MAX. A 0.80 1.00 0.031 0.039 A1 0.00 0.05 0.00 0.002 E A2 0.65 0.75 0.0255 0.0295 E2 0.43 0.63 0.017 0.0249 A3 0.15 0.25 0.006 0.0098 E4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 L 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 L2 0.125 0.00 0.005 D 3.00 BSC e 0.118 BSC D2 0.82 1.02 0.032 0.040 D3 1.01 1.21 0.0397 0.0476 MIN. r ⍜ MAX. INCHES 0.65 REF 2.00 BSC 0.075 BSC 0⬚ 12⬚ MIN. MAX. 0.0256 BSC 0.0787 BSC 0.0029 BSC 0⬚ 12⬚ © Zetex plc 2002 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (631) 360 2222 Fax: (631) 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2002 8