ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC(cont) = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m PD = 1.5W Complementary part number ZXTP07012EFF Description C This low voltage NPN transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. B Features E • Low profile SOT23F package • Low saturation voltage • High gain • High power dissipation E Applications • LED driver • Boost converter • Logic interface • Motor drive C B Pinout - top view Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 8 3000 ZXTN07012EFFTA Device marking 1D3 Issue 1 - September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN07012EFF Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-collector voltage (reverse blocking) VECO 3 V Emitter-base voltage VEBO 7 V Continuous collector current(c) IC 4.5 A Base current IB 1 A ICM 10 A 0.84 W 6.72 mW/°C 1.34 W 10.72 mW/°C 1.50 W 12.0 mW/°C 2.0 W PD 16.0 mW/°C Tj, Tstg - 55 to 150 °C Peak pulse current Power dissipation at Tamb =25°C(a) Linear derating factor PD Power dissipation at Tamb =25°C(b) Linear derating factor PD Power dissipation at Tamb =25°C(c) Linear derating factor PD Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit ambient(a) RJA 149 °C/W Junction to ambient(b) RJA 93 °C/W Junction to ambient(c) RJA 83 °C/W Junction to ambient(d) RJA 60 °C/W Junction to NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - September 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN07012EFF Characteristics Issue 1 - September 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN07012EFF Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage Max. Unit Conditions BVCBO 20 40 V IC = 100A Collector-emitter breakdown voltage (base open) BVCEO 12 17 V IC = 10mA (*) Emitter-base breakdown voltage BVEBO 7 8.3 V IE = 100A Emitter-collector breakdown voltage (reverse blocking) BVECX 6 8.2 V IE = 100A, RBC < 1k or 0.25V > VBC > -0.25V Emitter-collector breakdown voltage (base open) BVECO 3.0 5.3 V IE = 100A, Collector-base cut-off current ICBO <1 50 20 nA A VCB = 16V VCB = 16V, Tamb= 100°C Emitter-base cut-off current IEBO <1 50 nA VEB = 5.6V Collector-emitter saturation voltage VCE(sat) 25 40 mV IC = 100mA, IB = 0.5mA(*) 60 85 mV IC = 1A, IB = 10mA(*) 50 70 mV IC = 1A, IB = 100mA(*) 105 150 mV IC = 2A, IB = 20mA(*) 215 320 mV IC = 4.5A, IB = 45mA(*) VBE(sat) 945 1050 mV IC = 4.5A, IB = 45mA(*) Base-emitter turn-on voltage VBE(on) 850 950 mV IC = 4.5A, VCE = 2V(*) 500 800 1500 400 650 IC = 2A, VCE = 2V(*) 330 530 IC = 4.5A, VCE = 2V(*) 140 230 IC = 10A, VCE = 2V(*) 150 220 MHz IC = 50mA, VCE = 5V f = 50MHz Base-emitter saturation voltage Static forward current transfer ratio hFE Transition frequency fT Input capacitance Cibo 229 Output capacitance CObo 40 Delay time td Rise time IC = 0.1A, VCE = 2V(*) pF VEB = 0.5V, f = 1MHz(*) pF VCB = 10V, f = 1MHz(*) 26.8 ns tr 14.2 ns Storage time ts 250 ns VCC = 10V. IC = 500mA, IB1 = IB2= 50mA. Fall time tf 67.7 ns 50 NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. Issue 1 - September 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN07012EFF Typical characteristics Issue 1 - September 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN07012EFF Package outline - SOT23F c D b e1 b e L1 L E E1 b E2 A1 R A Dim. Millimeters Inches Min. Max. Min. Max. A 0.80 1.00 0.0315 0.0394 A1 0.00 0.10 0.00 b 0.35 0.45 c 0.10 D 2.80 e e1 Millimeters Inches Min. Max. Max. Max. E 2.30 2.50 0.0906 0.0984 0.0043 E1 1.50 1.70 0.0590 0.0669 0.0153 0.0161 E2 1.10 1.26 0.0433 0.0496 0.20 0.0043 0.0079 L 0.48 0.68 0.0189 0.0268 3.00 0.1102 0.1181 L1 0.30 0.50 0.0153 0.0161 R 0.05 0.15 0.0019 0.0059 O 0° 12° 0° 12° 0.95 ref 1.80 Dim. 2.00 0.0374 ref 0.0709 0.0787 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches. 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For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - September 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com