DIODES ZXTN19100CFFTA

ZXTN19100CFF
100V, SOT23F, NPN high gain power transistor
Summary
BVCEX > 200V
BVCEO > 100V
BVECO > 5V
IC(cont) = 4.5A
VCE(sat) < 60mV @ 1A
RCE(sat) = 38m⍀
PD = 1.5W
Complementary part number ZXTP19100CFF
Description
C
Advanced process capability has been used to maximise the
performance of this transistor. The SOT23F package is compatible with
the industry standard SOT23 footprint but offers lower profile and
higher dissipation for applications where power density is of utmost
importance
B
Features
E
•
High forward blocking voltage
•
Low saturation voltage
•
High gain
•
Low profile high dissipation package
E
Applications
C
•
Relay and solenoid driving
•
DC fans
•
Industrial and automotive switching
B
Pinout - top view
Ordering information
Device
ZXTN19100CFFTA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
8
3000
Device marking
1E5
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ZXTN19100CFF
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
200
V
Collector-emitter voltage (forward blocking)
VCEX
200
V
Collector-emitter voltage
VCEO
100
V
Emitter-collector voltage (reverse blocking)
VECO
5
V
Emitter-base voltage
VEBO
7
V
Continuous collector current(c)
IC
4.5
A
Base current
IB
1
A
ICM
6
A
Peak pulse current
0.84
Power dissipation at Tamb = 25°C(a)
Linear derating factor
PD
6.72
W
1.34
mW/°C
10.72
W
1.5
mW/°C
12.0
W
2
mW/°C
PD
16.0
W
Tj, Tstg
- 55 to 150
°C
Symbol
Limit
Unit
Junction to ambient(a)
R⍜JA
149.3
°C/W
Junction to ambient(b)
R⍜JA
93.4
°C/W
Junction to ambient(c)
R⍜JA
83.3
°C/W
Junction to ambient(d)
R⍜JA
60
°C/W
Power dissipation at Tamb = 25°C(b)
Linear derating factor
PD
Power dissipation at Tamb = 25°C(c)
Linear derating factor
PD
Power dissipation at Tamb = 25°C(d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
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ZXTN19100CFF
Characteristics
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Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol Min.
Typ.
Collector-base breakdown
voltage
BVCBO
200
240
V
IC = 100␮A
Collector-emitter breakdown
voltage (forward blocking)
BVCEX
200
240
V
IC = 100␮A, RBE < 1k⍀ or
-1V < VBE < 0.25V
Collector-emitter breakdown
voltage (base open)
BVCEO
100
120
V
IC = 10mA (*)
Emitter-base breakdown
voltage
BVEBO
7
8.3
V
IE = 100␮A
Emitter-collector breakdown
voltage (reverse blocking)
BVECX
6
8.3
V
IE = 100␮A, RBC < 1k⍀ or
0.25V > VBC > -0.25V
Emitter-collector breakdown
voltage (base open)
BVECO
5
8
V
IE = 100␮A,
Collector-base cut-off current
ICBO
50
nA
VCB = 160V
20
␮A
VCB = 160V, Tamb= 100°C
<1
Max.
Unit Conditions
Collector-emitter cut-off current ICEX
<1
100
nA
VCE = 160V, RBE < 1k⍀ or
-1V < VBE < 0.25V
Emitter-base cut-off current
IEBO
<1
50
nA
VEB = 5.6V
Collector-emitter saturation
voltage
VCE(sat)
45
60
mV
IC = 1A, IB = 100mA(*)
105
135
mV
IC = 1A, IB = 20mA(*)
170
235
mV
IC = 4.5A, IB = 450mA(*)
Base-emitter saturation voltage VBE(sat)
950
1050
mV
IC = 4.5A, IB = 450mA(*)
Base-emitter turn-on voltage
VBE(on)
880
1000
mV
IC = 4.5A, VCE = 2V (*)
Static forward current transfer
ratio
hFE
200
350
500
130
250
IC = 1A, VCE = 2V (*)
25
IC = 5A, VCE = 2V (*)
Transition frequency
fT
150
Input capacitance
Cibo
305
Output capacitance
Cobo
15.7
Delay time
td
Rise time
IC = 0.1A, VCE = 2V (*)
MHz IC = 100mA, VCE = 10V
f =50MHz
pF
VEB = 0.5V, f = 1MHz (*)
pF
VCB = 10V, f = 1MHz (*)
28.3
ns
tr
23.6
ns
Storage time
ts
962
ns
VCC = 10V.
IC = 500mA,
IB1 = IB2= 50mA.
Fall time
tf
133
ns
25
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
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ZXTN19100CFF
Typical characteristics
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ZXTN19100CFF
Intentionally left blank
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ZXTN19100CFF
Package outline - SOT23F
c
D
b
e1
b
e
L1
L
E
E1
b
E2
A1
R
A
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.80
1.00
0.0315
0.0394
A1
0.00
0.10
0.00
b
0.35
0.45
c
0.10
D
2.80
e
e1
Millimeters
Inches
Min.
Max.
Max.
Max.
E
2.30
2.50
0.0906
0.0984
0.0043
E1
1.50
1.70
0.0590
0.0669
0.0153
0.0161
E2
1.10
1.26
0.0433
0.0496
0.20
0.0043
0.0079
L
0.48
0.68
0.0189
0.0268
3.00
0.1102
0.1181
L1
0.30
0.50
0.0153
0.0161
R
0.05
0.15
0.0019
0.0059
O
0°
12°
0°
12°
0.95 ref
1.80
Dim.
2.00
0.0374 ref
0.0709
0.0787
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTN19100CFF
Definitions
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Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
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Device will be discontinued and last time buy period and delivery is in effect
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Production has been discontinued
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This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
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