DIODES ZXTN2011G

ZXTN2011G
100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION
TRANSISTOR IN SOT223
SUMMARY
BVCEO = 100V : RSAT = 36m ; IC = 6A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 100V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
SOT223
• 6 amps continuous current
• Up to 10 amps peak current
• Very low saturation voltages
APPLICATIONS
• Motor driving
• Line switching
• High side switches
• Subscriber line interface cards (SLIC)
ORDERING INFORMATION
DEVICE
ZXTN2011GTA
ZXTN2011GTC
REEL
SIZE
7”
13”
PINOUT
TAPE
WIDTH
QUANTITY PER
REEL
12mm
1,000 units
embossed
4,000 units
DEVICE MARKING
ZXTN
2011
TOP VIEW
ISSUE 2 - MAY 2006
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SEMICONDUCTORS
ZXTN2011G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV CBO
200
V
Collector-emitter voltage
BV CEO
100
V
Emitter-base voltage
BV EBO
7
V
A
Continuous collector current (a)
IC
6
Peak pulse current
I CM
10
A
Power dissipation at T A =25°C (a)
PD
3.0
W
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
24
mW/°C
PD
1.6
W
12.8
mW/°C
Operating and storage temperature range
T j , T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to ambient (a)
R ⍜JA
VALUE
UNIT
42
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 2 - MAY 2006
SEMICONDUCTORS
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ZXTN2011G
CHARACTERISTICS
ISSUE 2 - MAY 2006
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SEMICONDUCTORS
ZXTN2011G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
Collector-base breakdown voltage
BV CBO
200
235
V
I C =100␮A
Collector-emitter breakdown voltage
BV CER
200
235
V
I C =1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage
BV CEO
100
115
V
I C =10mA*
Emitter-base breakdown voltage
BV EBO
7
8.1
V
I E =100␮A
Collector cut-off current
I CBO
50
nA
V CB =150V
0.5
␮A
VCB=150V,Tamb=100⬚C
Collector cut-off current
I CER
100
nA
V CB =150V
R ⱕ 1k⍀
0.5
␮A
VCB=150V,Tamb=100⬚C
V EB =6V
Emitter cut-off current
I EBO
Collector-emitter saturation voltage
V CE(SAT)
Base-emitter saturation voltage
V BE(SAT)
Base-emitter turn-on voltage
V BE(ON)
Static forward current transfer ratio
H FE
fT
Output capacitance
C OBO
nA
35
mV
I C =0.1A, I B =5mA*
50
65
mV
IC=1A, IB=100mA*
IC=2A, IB=100mA*
95
125
mV
180
220
mV
IC=5A, IB=500mA*
1020
1120
mV
I C =5A, I B =500mA*
920
1000
mV
I C =5A, V CE =2V*
I C =10mA, V CE =2V*
100
230
100
200
30
60
10
Transition frequency
10
21
IC=2A, VCE=2V*
300
IC=5A, VCE=2V*
IC=10A, VCE=2V*
20
130
MHz I C =100mA, V CE =10V
f=50MHz
Switching times
26
pF
t ON
41
ns
t OFF
1010
V CB =10V, f=1MHz*
I C =1A, V CC =10V,
I B1 =I B2 =100mA
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
ISSUE 2 - MAY 2006
SEMICONDUCTORS
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ZXTN2011G
TYPICAL CHARACTERISTICS
ISSUE 2 - MAY 2006
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SEMICONDUCTORS
ZXTN2011G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
A
-
1.80
-
0.071
e
Min
2.30 BSC
Max
Min
0.0905 BSC
Max
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
© Zetex Semiconductors plc 2005
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ISSUE 2 - MAY 2006
SEMICONDUCTORS
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