DIODES ZXTN2018FTA

ZXTN2018F
60V, SOT23, NPN medium power transistor
Summary
V(BR)CEV > 140V, V(BR)CEO > 60V
IC(cont) = 5A
RCE(sat) = 25 m⍀ typical
VCE(sat) < 45 mV @ 1A
PD = 1.2W
Complementary part number : ZXTP2027F
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
•
Higher power dissipation SOT23 package
•
High peak current
•
Low saturation voltage
•
140V forward blocking voltage
Applications
•
MOSFET and IGBT gate driving
•
Motor drive
•
Relay, lamp and solenoid drive
Ordering information
Device
Pinout - top view
Reel size
(inches)
Tape width
(mm)
Quantity per reel
7
8
3,000
ZXTN2018FTA
Device marking
851
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ZXTN2018F
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
VCBO
140
V
Collector-emitter voltage
V(BR)CEV
140
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
ICM
12
A
Continuous collector current (a)
IC
5
A
Base current
IB
1
A
Power dissipation @ TA=25oC (a)
Linear derating factor
PD
1.0
W
mW/oC
Power dissipation @ TA=25oC (b)
Linear derating factor
PD
Power dissipation @ TA=25oC (c)
Linear derating factor
PD
Collector-base voltage
Peak pulse current
8.0
1.2
9.6
Operating and storage temperature
1.56
W
mW/oC
12.5
W
mW/oC
Tj:Tstg
-55 to +150
oC
Thermal resistance
Parameter
Symbol
Value
(a)
R⍜JA
125
o
Junction to ambient (b)
R⍜JA
104
o
Junction to ambient (c)
R⍜JA
80
o
Junction to ambient
Unit
C/W
C/W
C/W
NOTES:
(a) Mounted on 18mm x 18mm X 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(b) Mounted on 30mm x 30mm X 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(c) as (b) above measured at t<5secs.
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ZXTN2018F
Characteristics
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ZXTN2018F
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
V(BR)CBO
140
180
V
IC=100␮A
Collector-emitter breakdown
voltage
V(BR)CEV
140
180
V
IC =1␮A,
-1V < VBE < +0.3V
Collector-emitter breakdown
voltage
V(BR)CEO
60
80
V
IC=10mA (a)
Emitter-base breakdown
voltage
V(BR)EBO
7
8
V
IE=100␮A
Collector-emitter cut-off
current
ICEV
<1
20
nA
VCE=110V,
VBE = -1V
Collector-base cut-off current
ICBO
<1
20
nA
VCB=110V
Emitter-base cut-off current
IEBO
<1
10
nA
VEB=6V
Static forward current transfer
ratio
HFE
Collector-emitter saturation
voltage
Max.
Unit
Conditions
100
220
100
200
40
65
IC=5A, VCE=1V(a)
15
25
IC=10A, VCE=1V(a)
VCE(sat)
IC=10mA, VCE=1V(a)
IC=2A, VCE=1V(a)
300
15
30
mV
IC=0.1A, IB=5mA(a)
35
45
mV
IC=1A, IB=100mA(a)
40
55
mV
IC=1A, IB=50mA(a)
85
110
mV
IC=2A, IB=50mA(a)
145
170
mV
IC=5A, IB=250mA(a)
170
210
mV
IC=6A, IB=300mA(a)
Base-emitter saturation voltage
VBE(sat)
0.92
1.00
V
IC=5A, IB=250mA(a)
Base-emitter turn-on voltage
VBE(on)
0.85
0.95
V
IC=5A, VCE=1V(a)
Transition frequency
fT
130
MHz
Output capacitance
Cobo
28
pF
VCB=10V, f=1MHz
Turn-on time
t(on)
33
ns
VCC=10V, IC=1A,
Turn-off time
t(off)
668
ns
IB1=IB2=100mA
Ic=100mA, VCE=10V,
f=50MHz
NOTES:
(a) Measured under pulsed conditions. Pulse width=300␮S. Duty cycle ⱕ2%.
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ZXTN2018F
Typical characteristics
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ZXTN2018F
Packaging details - SOT23
L
H
N
G
D
3 leads
M
A
B
C
K
Dim.
F
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
-
1.10
D
0.37
F
0.085
G
Dim.
Millimeters
Inches
Min.
Max.
Max.
Max.
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
-
0.043
L
2.10
2.50
0.083
0.0985
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
0.15
0.0034
0.0059
N
0.95 NOM
-
-
1.90 NOM
0.075 NOM
0.0375 NOM
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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