DIODES ZXTN2038FTC

A Product Line of
Diodes Incorporated
ZXTN2038F
SOT23 80 volt NPN silicon planar medium power
transistor
Summary
V(BR)CEV > 80V
V(BR)CEO > 60V
Ic(cont) = 1A
Vce(sat) < 500mV @ 1A
Complementary type
ZXTP2039F
Description
This transistor combines high gain, high current operation and low saturation voltage making it
ideal for power MOSFET gate driving and low loss power switching.
Features
•
Low saturation voltage for reduced power dissipation
•
1 to 2 amp high current capability
•
Pb-free
•
SOT23 package
Applications
•
Power MOSFET gate driving
•
Low loss power switching
Ordering information
Device
Reel size
Tape width
Quantity per reel
ZXTN2038FTA
7”
8mm
3,000
ZXTN2038FTC
13”
8mm
10,000
Device marking
N38
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ZXTN2038F
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEV
80
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
5.0
V
Peak pulse current
ICM
2
A
Continuous collector current (*)
IC
1
A
Peak base current
IBM
1
A
Power dissipation @ TA=25°C(*)
PD
350
mW
Operating and storage temperature
Tj:Tstg
55 to +150
°C
NOTES:
(*) For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
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ZXTN2038F
Electrical characteristics (@TAMB = 25°C)
Parameter
Symbol
Min.
Collector-base breakdown
voltage
V(BR)CBO
80
V
IC=100␮A
Collector-emitter breakdown
voltage
V(BR)CEV
80
V
IC=100␮A,
0.3V > VBE > -1V
Collector-emitter breakdown
voltage
V(BR)CEO
60
V
IC=10mA (*)
Emitter-base breakdown voltage
V(BR)EBO
5
V
IE=100␮A
Collector-emitter cut-off current
ICES
100
nA
VCE=60V
Collector-base cut-off current
ICBO
100
nA
VCB=60V
Emitter-base cut-off current
IEBO
100
nA
VEB=4V
Static forward current transfer
ratio
hFE
Collector-emitter saturation
voltage
Max.
Unit
100
100
Conditions
IC=1mA, VCE=5V
IC=500mA, VCE=5V(*)
300
80
IC=1A, VCE=5V(*)
30
IC=2A, VCE=5V(*)
VCE(sat)
0.2
0.25
V
V
V
0.5
IC=100mA, IB=2mA(*)
IC=500mA,
IB=50mA(*)
IC=1A, IB=100mA(*)
Base-emitter saturation voltage
VBE(sat)
1.1
V
IC=1A, IB=100mA(*)
Base-emitter turn-on voltage
VBE(on)
1.0
V
IC=1A, VCE=5V(*)
Transition frequency
fT
Output capacitance
Cobo
150
IC=50mA, VCE=10V
f=100MHz
10
pF
VCB=10V, f=1MHz
NOTES:
(*) Measured under pulsed conditions. Pulse width=300␮S. Duty cycle ⱕ2%
Spice parameter data is available upon request for this device
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ZXTN2038F
Typical characteristics
0.6
+25 ° C
0.5
0.5
0.4
0.4
VCE(sat) -(V)
VCE(sat) -(V)
0.6
0.3
IC/IB=10
IC/IB=50
0.2
IC/IB=10
0.3
-55 °C
+25 °C
+100 °C
0.2
0.1
0.1
0
0
1mA
400
10mA
1A
100mA
10A
10mA
1mA
100mA
1A
IC-Collector Current
IC-Collector Current
VCE(sat) v IC
VCE(sat) v IC
VCE=5V
10A
IC/IB=10
V BE(sat) - (V)
+100 °C
300
+25 °C
200
100
-55 °C
0
1mA
1.2
0.6
-55 °C
+25 °C
+100 °C
0.4
0
10mA
100mA
1A
1mA
10A
10mA
100mA
1A
IC-Collector Current
IC-Collector Current
hFE V IC
VBE(sat) v IC
10A
10
VCE=5V
1.0
VBE(on) - (V)
0.8
0.2
I C -Collector Current (A)
h FE - Typical Gain
1.0
0.8
0.6
-55 °C
+25 °C
+100 °C
0.4
0.2
1
0.1
DC
1s
100ms
10ms
1ms
100us
0.01
0
1mA
10mA
100mA
1A
0.1V
10A
IC-Collector Current
VBE(on) v IC
Issue 4 - January 2009
© Diodes Incorporated, 2008
1V
10V
100V
VCE - Collector Emitter Voltage (V)
Safe Operating Area
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ZXTN2038F
Packaging details - SOT23
E
e
e1
b
3 leads
L1
D
E1
A
L
A1
c
Package dimensions
Dim.
Millimeters
Inches
Dim.
Millimeters
Min.
Max.
Min.
Max.
A
-
1.12
-
0.044
e1
A1
0.01
0.10
0.0004
0.004
E
2.10
2.64
0.083
0.104
b
0.30
0.50
0.012
0.020
E1
1.20
1.40
0.047
0.055
c
0.085
0.20
0.003
0.008
L
0.25
0.60
0.0098
0.0236
D
2.80
3.04
0.110
0.120
L1
0.45
0.62
0.018
0.024
-
-
-
-
-
e
0.95 NOM
Min.
0.037 NOM
Max.
Inches
1.90 NOM
Min.
Max.
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTN2038F
Definitions
Product change
Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property
rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether
in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business,
contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
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The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
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representation relating to the products or services concerned.
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All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the
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For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office.
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Diodes Zetex Semconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes Inc. or one of our regionally
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Diodes Inc. does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
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Diodes Inc. is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory
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All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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