DIODES ZXTN25020CFH

ZXTN25020CFH
20V, SOT23, NPN medium power transistor
Summary
BVCEX > 70V
BVCEO > 20V
BVECO > 5V
IC(cont) = 4.5A
VCE(sat) < 45 mV @ 1A
RCE(sat) = 28 m⍀
PD = 1.25W
Complementary part number ZXTP25020CFH
Description
C
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
High power dissipation SOT23 package
•
High peak current
•
High gain
•
Low saturation voltage
•
70V forward blocking voltage
•
5V reverse blocking voltage
E
E
Applications
•
MOSFET gate drivers
•
Power switches
•
Motor control
•
DC fans
•
DC-DC converters
C
B
Pinout - top view
Ordering information
Device
ZXTN25020CFHTA
Reel size
(inches)
Tape width
(mm)
Quantity per reel
7
8
3,000
Device marking
1B3
Issue 1 - June 2006
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ZXTN25020CFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
70
V
Collector-emitter voltage (forward blocking)
VCEX
70
V
Collector-emitter voltage
VCEO
20
V
Emitter-collector voltage (reverse blocking)
VECO
5
V
Emitter-base voltage
VEBO
7
V
Continuous collector current(c)
IC
4.5
A
Base current
IB
1
A
Peak pulse current
ICM
10
A
Power dissipation at Tamb =25°C(a)
PD
0.73
W
5.84
mW/°C
1.05
W
8.4
mW/°C
1.25
W
9.6
mW/°C
1.81
W
14.5
mW/°C
Tj, Tstg
- 55 to 150
°C
Symbol
Limit
Unit
Junction to ambient(a)
R⍜JA
171
°C/W
Junction to ambient(b)
R⍜JA
119
°C/W
Junction to ambient(c)
R⍜JA
100
°C/W
Junction to ambient(d)
R⍜JA
69
°C/W
Linear derating factor
PD
Power dissipation at Tamb =25°C(b)
Linear derating factor
PD
Power dissipation at Tamb =25°C(c)
Linear derating factor
PD
Power dissipation at Tamb =25°C(d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
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ZXTN25020CFH
Characteristics
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ZXTN25020CFH
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
BVCBO
70
100
Collector-emitter breakdown BVCEX
voltage (forward blocking)
70
100
Collector-emitter breakdown BVCEO
voltage (base open)
20
35
V
IC = 10mA (*)
Emitter-base breakdown
voltage
BVEBO
7
8.3
V
IE = 100␮A
Emitter-collector breakdown
voltage (reverse blocking)
BVECX
6
8.0
V
IE = 100␮A, RBC ⱕ 1k⍀ or
0.25V > VBC > -0.25V
Emitter-collector breakdown
voltage (base open)
BVECO
5
6.6
V
IE = 100␮A,
Collector-base cut-off current ICBO
Max.
Unit Conditions
V
IC = 100␮A
IC = 100␮A, RBE ⱕ 1k⍀ or
-1V < VBE < 0.25V
<1
50
20
nA
␮A
VCB = 56V
VCB = 56V, Tamb= 100°C
Collector-emitter cut-off
current
ICEX
-
100
nA
VCE = 56V; RBE ⱕ 1k⍀ or
-1V < VBE < 0.25V
Emitter-base cut-off current
IEBO
<1
50
nA
VEB = 5.6V
Collector-emitter saturation
voltage
VCE(sat)
35
45
mV
IC = 1A, IB = 100mA(*)
53
65
mV
IC = 1A, IB = 20mA(*)
85
100
mV
IC = 2A, IB = 40mA(*)
175
220
mV
IC = 4.5A, IB = 90mA(*)
125
140
mV
IC = 4.5A, IB = 450mA(*)
VBE(sat)
905
1000
mV
IC = 4.5A, IB = 90mA(*)
Base-emitter turn-on voltage VBE(on)
815
900
mV
IC = 4.5A, VCE = 2V(*)
200
350
500
180
320
IC = 1A, VCE = 2V(*)
90
145
IC = 4.5A, VCE = 2V(*)
25
40
IC = 10A, VCE = 2V(*)
Base-emitter saturation
voltage
Static forward current
transfer ratio
hFE
Transition frequency
fT
185
Output capacitance
COBO
16.8
Delay time
td
Rise time
IC = 10mA, VCE = 2V(*)
MHz IC = 50mA, VCE = 10V
f = 100MHz
25
pF
VCB = 10V, f = 1MHz(*)
70.5
ns
tr
88
ns
Storage time
ts
266
ns
VCC = 10V.
IC = 1A,
IB1 = IB2= 10mA.
Fall time
tf
65
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
Issue 1 - June 2006
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ZXTN25020CFH
Typical characteristics
Issue 1 - June 2006
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ZXTN25020CFH
Package outline - SOT23
L
H
N
G
D
3 leads
M
A
B
C
K
Dim.
F
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
-
1.10
D
0.37
F
0.085
G
Dim.
Millimeters
Inches
Min.
Max.
Max.
Max.
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
-
0.043
L
2.10
2.50
0.083
0.0985
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
0.15
0.0034
0.0059
N
0.95 NOM
-
-
1.90 NOM
0.075 NOM
0.0375 NOM
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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USA
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3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
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This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
6
www.zetex.com