DIODES ZXTN25100DFH

ZXTN25100DFH
100V, SOT23, NPN medium power transistor
Summary
BVCEX > 180V
BVCEO > 100V
BVECO > 6V
IC(cont) = 2.5A
VCE(sat) < 95mV @ 1A
RCE(sat) = 86m⍀
PD = 1.25W
Complementary part number ZXTP25100DFH
Description
C
Advanced process capability and package design have been used to
maximise the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
High power dissipation SOT23 package
•
High gain
•
Low saturation voltage
•
180V forward blocking voltage
•
6V reverse blocking voltage
E
E
Application
•
Motor control
•
DC fans
•
DC-DC converters
•
Lamp, relay, and solenoid driving
C
B
Pinout - top view
Ordering information
Device
ZXTN25100DFHTA
Reel size
(inches)
Tape width
(mm)
Quantity per reel
7
8
3,000
Device marking
1B5
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ZXTN25100DFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
180
V
Collector-emitter voltage (forward blocking)
VCEX
180
V
Collector-emitter voltage
VCEO
100
V
Emitter-collector voltage (reverse blocking)
VECO
6
V
Emitter-base voltage
VEBO
7
V
Continuous collector current(c)
IC
2.5
A
Base current
IB
0.5
A
Peak pulse current
ICM
3
A
Power dissipation at Tamb =25°C(a)
PD
0.73
W
5.84
mW/°C
PD
1.05
W
8.4
mW/°C
1.25
W
9.6
mW/°C
PD
1.81
W
14.5
mW/°C
Tj, Tstg
- 55 to 150
°C
Linear derating factor
Power dissipation at Tamb
=25°C(b)
Linear derating factor
Power dissipation at Tamb
PD
=25°C(c)
Linear derating factor
Power dissipation at Tamb =25°C(d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Symbol
Limit
Unit
ambient(a)
R⍜JA
171
°C/W
Junction to ambient(b)
R⍜JA
119
°C/W
Junction to ambient(c)
R⍜JA
100
°C/W
Junction to ambient(d)
R⍜JA
69
°C/W
Junction to
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
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ZXTN25100DFH
Characteristics
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ZXTN25100DFH
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
BVCBO
180
220
V
IC = 100␮A
Collector-emitter breakdown
voltage (forward blocking)
BVCEX
180
220
V
IC = 100␮A, RBE ⱕ 1k⍀ or
-1V < VBE < 0.25V
Collector-emitter breakdown
voltage (base open)
BVCEO
100
130
V
IC = 10mA (*)
Emitter-base breakdown
voltage
BVEBO
7
8.3
V
IE = 100␮A
Emitter-collector breakdown
voltage (reverse blocking)
BVECX
6
8.2
V
IE = 100␮A, RBC ⱕ 1k⍀ or
0.25V > VBC > -0.25V
Emitter-collector breakdown
voltage (base open)
BVECO
6
8.7
V
IE = 100␮A,
Collector-base cut-off current ICBO
Max.
Unit Conditions
<1
50
0.5
nA
␮A
VCB = 180V
VCB = 180V, Tamb= 100°C
Collector-emitter cut-off
current
ICEX
-
100
nA
VCE = 144V; RBE ⱕ 1k⍀ or
-1V < VBE < 0.25V
Emitter-base cut-off current
IEBO
<1
50
nA
VEB = 5.6V
Collector-emitter saturation
voltage
VCE(sat)
120
170
mV
IC = 0.5A, IB = 10mA(*)
80
95
mV
IC = 1A, IB = 100mA(*)
215
330
mV
IC = 2.5A, IB = 250mA(*)
Base-emitter saturation
voltage
VBE(sat)
910
1000
mV
IC = 2.5A, IB = 250mA(*)
Base-emitter turn-on voltage
VBE(on)
860
950
mV
IC = 2.5A, VCE = 2V(*)
Static forward current
transfer ratio
hFE
300
450
900
120
170
IC = 0.5A, VCE = 2V(*)
40
60
IC = 1A, VCE = 2V(*)
20
IC = 2.5A, VCE = 2V(*)
Transition frequency
fT
175
Output capacitance
COBO
8.7
Delay time
td
Rise time
IC = 10mA, VCE = 2V(*)
MHz IC = 100mA, VCE = 10V
f = 100MHz
15
pF
VCB = 10V, f = 1MHz(*)
16.4
ns
tr
115
ns
Storage time
ts
763
ns
VCC = 10V.
IC = 500mA,
IB1 = IB2= 50mA.
Fall time
tf
158
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
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ZXTN25100DFH
Typical characteristics
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ZXTN25100DFH
Package outline - SOT23
E
e
e1
b
3 leads
L1
D
E1
A
A1
Dim.
L
c
Millimeters
Inches
Dim.
Millimeters
Min.
Max.
Min.
Max.
A
-
1.12
-
0.044
e1
A1
0.01
0.10
0.0004
0.004
E
2.10
2.64
0.083
0.104
b
0.30
0.50
0.012
0.020
E1
1.20
1.40
0.047
0.055
c
0.085
0.20
0.003
0.008
L
0.25
0.60
0.0098
0.0236
D
2.80
3.04
0.110
0.120
L1
0.45
0.62
0.018
0.024
-
-
-
-
-
e
0.95 NOM
Min.
0.037 NOM
Max.
Inches
1.90 NOM
Min.
Max.
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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Hong Kong
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Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
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Fax: (49) 89 45 49 49 49
[email protected]
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Fax: (1) 631 360 8222
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Fax: (852) 24250 494
[email protected]
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
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This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
6
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