ZETEX ZXTN25100DGTA

ZXTN25100DG
100V NPN high gain transistor in SOT223
Summary
BVCEX > 180V
BVCEO > 100V
BVECO > 6V
IC(cont) = 3A
VCE(sat) < 100mV @ 1A
RCE(sat) = 85m⍀
PD = 3.0W
Complementary part number ZXTP19100CG
Description
C
Packaged in the SOT223 outline this new low saturation NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
B
Features
•
High power dissipation SOT223 package
•
High gain
•
Low saturation voltage
•
180V forward blocking voltage
•
6V reverse blocking voltage
E
Applications
E
•
PSU start up circuit
•
DC - DC converters
•
Motor drive
•
Relay, lamp and solenoid drive
C
B
Ordering information
Device
ZXTN25100DGTA
C
Pinout - top view
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
1000
Device marking
•
ZXTN25
100D
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ZXTN25100DG
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-Base voltage
VCBO
180
V
Collector-Emitter voltage (forward blocking)
VCEX
180
V
Collector-Emitter voltage
VCEO
100
V
Emitter-Collector voltage (reverse blocking)
VECO
6
V
Emitter-Base voltage
VEBO
7
V
Continuous Collector current(c)
IC
3
A
Base current
IB
1
A
Peak pulse current
ICM
3.5
A
Power dissipation at TA =25°C(a)
PD
1.2
W
9.6
mW/°C
1.6
W
12.8
mW/°C
3
W
24
mW/°C
5.3
W
42
mW/°C
7.3
W
58
mW/°C
Tj, Tstg
-55 to 150
°C
Linear derating factor
PD
Power dissipation at TA =25°C(b)
Linear derating factor
PD
Power dissipation at TA =25°C(c)
Linear derating factor
PD
Power dissipation at TA =25°C(d)
Linear derating factor
PD
Power dissipation at TC =25°C(e)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to
ambient(a)
R⍜JA
104
°C/W
Junction to
ambient(b)
R⍜JA
78
°C/W
Junction to ambient(c)
R⍜JA
42
°C/W
Junction to ambient(d)
R⍜JA
23.5
°C/W
Junction to case(e)
R⍜JC
16
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mmounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab). Typical
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ZXTN25100DG
Thermal characteristics
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ZXTN25100DG
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(forward blocking)
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
Symbol
BVCBO
Min.
180
Typ.
220
BVCEX
180
220
V
IC = 100μA, RBE < 1kΩ or
-1V < VBC < 0.25V
BVCEO
100
130
V
IC= 10mA (*)
BVECX
6
8.2
V
IE = 100μA, RBC < 1kΩ or
0.25V > VBC > -0.25V
BVECO
6
8.7
V
IE = 100μA
BVEBO
7
8.3
V
IE = 100μA
Collector-Emitter cut-off
current
ICEX
Emitter-Base cut-off
current
Collector-Emitter
saturation voltage
IEBO
ICBO
Unit
V
Conditions
IC = 100μA
50
0.5
nA
μA
VCB =180V
VCB =180V, Tamb=100°C
100
nA
VCE = 100V, RBE < 1kΩ or
-1V < VBE < 0.25V
<1
50
nA
VEB = 5.6V
VCE(sat)
120
80
215
200
170
100
345
500
mV
mV
mV
mV
IC = 0.5A, IB = 10mA(*)
IC = 1A, IB = 100mA(*)
IC = 2.5A, IB = 250mA(*)
IC = 3A, IB = 600mA(*)
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
VBE(sat)
1020
1100
mV
IC = 3A, IB = 600mA(*)
VBE(on)
905
1000
mV
IC = 3A, VCE = 2V(*)
450
170
60
10
900
Transition frequency
fT
175
Input capacitance
Cibo
154
Output capacitance
Cobo
8.7
Delay time
td
16.4
ns
Rise time
tr
115
ns
Storage time
ts
763
ns
Fall time
tf
158
ns
hFE
<1
Max.
300
120
40
IC = 10mA, VCE = 2V(*)
IC = 0.5A, VCE = 2V(*)
IC = 1A, VCE = 2V(*)
IC = 3A, VCE = 2V(*)
MHz
IC = 50mA, VCE = 10V
f = 100MHz
250
pF
VEB = 0.5V, f = 1MHz(*)
15
pF
VCB = 10V, f = 1MHz(*)
IC = 500mA, VCC =10V,
IB1 = -IB2 = 50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
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ZXTN25100DG
Typical characteristics
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ZXTN25100DG
Intentionally left blank
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ZXTN25100DG
Package outline - SOT223
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
A
-
1.80
-
0.071
D
6.30
6.70
0.248
0.264
A1
0.02
0.10
0.0008
0.004
e
2.30 BSC
0.0905 BSC
A2
1.55
1.65
0.0610
0.0649
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTN25100DG
Definitions
Product change
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The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
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A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
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Future device intended for production at some point. Samples may be available
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Product status recommended for new designs
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“Not recommended for new designs” Device is still in production to support existing designs and production
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Production has been discontinued
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This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
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