DIODES ZXTN617MA

A Product Line of
Diodes Incorporated
ZXTN617MA
15V NPN LOW SATURATION TRANSISTOR
Features and Benefits
Mechanical Data
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BVCEO > 15V
IC = 4.5A Continuous Collector Current
Low Saturation Voltage (100mV max @ 1A)
RSAT = 45 mΩ for a low equivalent On-Resistance
hFE specified up to 12A for high current gain hold up
Low profile 0.6mm high package for thin applications
RθJA efficient, 60% lower than SOT23
2
4mm footprint, 50% smaller than SOT23
Lead-Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Case: DFN2020B-3
Case Material: Molded Plastic. “Green” Molding Compound.
Terminals: Pre-Plated NiPdAu leadframe.
Nominal Package Height: 0.6mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.01 grams (approximate)
Applications
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MOSFET Gate Driving
DC–DC Converters
Charging Circuits
Motor Control
Power switch
DFN2020B-3
C
B
E
Top View
Bottom View
Device Symbol
Bottom View
Pin-Out
Ordering Information
Product
ZXTN617MATA
Notes:
Marking
SA
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com.
Marking Information
SA
SA = Product Type Marking code
Top View
ZXTN617MA
Document number: DS31888 Rev. 4 - 2
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December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN617MA
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VCBO
VCEO
VEBO
ICM
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
(Note 3)
(Note 4)
IC
Base Current
IB
Value
40
15
7
15
4.5
5
1
Unit
Value
1.5
12
2.45
19.6
83
51
16.8
-55 to +150
Unit
V
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
Symbol
(Note 3)
PD
(Note 4)
(Note 3)
(Note 4)
(Note 5)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
2
3. For a device surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
4. Same as note (3), except the device is measured at t ≤ 5 sec.
5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).
ZXTN617MA
Document number: DS31888 Rev. 4 - 2
2 of 7
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December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN617MA
Thermal Characteristics
Max Power Dissipation (W)
IC Collector Current (A)
2.0
VCE(SAT)
10
Limited
DC
1
1s
100ms
10ms
0.1
1ms
100us
0.01
0.1
Single Pulse, T amb=25°C
1
10
10 sqcm
Single
1oz Cu
Tamb=25°C
1.5
1.0
0.5
0.0
0
VCE Collector-Emitter Voltage (V)
25
50
75
100
125
150
Temperature (°C)
Safe Operating Area
Derating Curve
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
225
10 sqcm
Single
1oz Cu
80
60
D=0.5
40
20
Single Pulse
D=0.2
0
100µ
D=0.05
D=0.1
1m
10m 100m
1
10
100
1k
200
175
150
125
1oz copper
100
75
50
25
0
0.1
Pulse Width (s)
2oz copper
1
10
100
Board Cu Area (sqcm)
Thermal Resistance v Board Area
Transient Thermal Impedance
PD Dissipation (W)
3.5
3.0
2.5
T amb=25°C
2oz copper
T j max=150°C
Continuous
2.0
1.5
1oz copper
1.0
0.5
0.0
0.1
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTN617MA
Document number: DS31888 Rev. 4 - 2
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December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN617MA
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
Min
40
15
7
-
Typ
70
18
8.2
-
Max
100
100
100
Unit
V
V
V
nA
nA
nA
hFE
200
300
200
150
-
415
450
320
240
80
-
-
Collector-Emitter Saturation Voltage (Note 6)
VCE(sat)
-
8
70
165
240
200
14
100
200
310
-
mV
Base-Emitter Turn-On Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Output Capacitance
VBE(on)
VBE(sat)
Cobo
-
0.88
0.94
30
0.96
1.05
40
V
V
pF
Transition Frequency
fT
80
120
-
MHz
Turn-On Time
Turn-Off Time
ton
toff
-
120
160
-
ns
ns
Static Forward Current Transfer Ratio (Note 6)
Notes:
Test Condition
IC = 100 µA
IC = 10 mA
IE = 100 µA
VCB = 30V
VEB = 6V
VCES = 12V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 3A, VCE = 2V
IC = 5A, VCE = 2V
IC = 12A, VCE = 2V
IC =0.1A, IB = 10mA
IC = 1A, IB = 10mA
IC = 3A, IB = 50mA
IC =4.5A, IB = 50mA
IC =4.5A, IB = 100mA
IC = 4.5A, VCE = 2V
IC = 4.5A, IB = 50mA
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
VCC = 10V, IC = 1A
IB1 = IB2 = 10mA
6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
ZXTN617MA
Document number: DS31888 Rev. 4 - 2
4 of 7
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December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN617MA
Typical Electrical Characteristics
1
0.25
IC/IB=50
Tamb=25°C
0.20
VCE(SAT) (V)
VCE(SAT) (V)
100m
IC/IB=100
10m
IC/IB=50
0.15
100°C
0.10
25°C
-55°C
0.05
IC/IB=10
1m
1m
10m
100m
1
0.00
1m
10
IC Collector Current (A)
10m
100m
1
10
IC Collector Current (A)
VCE(SAT) v IC
VCE(SAT) v IC
630
1.0
450
25°C
0.8
360
0.6
270
-55°C
0.4
180
0.2
0.0
1m
90
10m
100m
1
10
1.0
540
100°C
0
VBE(SAT) (V)
Normalised Gain
1.2
Typical Gain (hFE)
VCE=2V
0.8
-55°C
25°C
0.6
100°C
0.4
1m
10m
100m
1
10
IC Collector Current (A)
IC Collector Current (A)
hFE v IC
1.0
IC/IB=50
VBE(SAT) v IC
VCE=2V
VBE(ON) (V)
0.8
-55°C
0.6
25°C
0.4
0.2
1m
100°C
10m
100m
1
10
IC Collector Current (A)
VBE(ON) v IC
ZXTN617MA
Document number: DS31888 Rev. 4 - 2
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December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN617MA
Package Outline Dimensions
A3
DFN2020B-3
Dim Min Max Typ
A
0.57 0.63 0.60
A1
0
0.05 0.02
A3
⎯
⎯ 0.152
b
0.20 0.30 0.25
D
1.95 2.075 2.00
D2 1.22 1.42 1.32
D4 0.56 0.76 0.66
e
0.65
⎯
⎯
E
1.95 2.075 2.00
E2
0.79 0.99 0.89
E4
0.48 0.68 0.58
L
0.25 0.35 0.30
Z
⎯
⎯ 0.225
All Dimensions in mm
A
SEATING PLANE
A1
D
D2
Z
L
D4
E E2
E4
b
e
e
Suggested Pad Layout
X
Y1
Y
G
X1
Y2
C
ZXTN617MA
Document number: DS31888 Rev. 4 - 2
Dimensions
C
G
X
X1
Y
Y1
Y2
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Value (in mm)
1.30
0.24
0.35
1.52
1.09
0.47
0.50
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN617MA
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability
arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license
under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are
represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
Life support devices or systems are devices or systems which:
1.
are intended to implant into the body, or
2.
support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or
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their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any
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Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safetycritical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
ZXTN617MA
Document number: DS31888 Rev. 4 - 2
7 of 7
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December 2010
© Diodes Incorporated