A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E ( s a t ) TRANSISTOR IN SO T-23 Features • • • • • • • • • • • Mechanical Data BVCEO > 25V BVCBO > 35V IC(cont) = 3A Continuous Currrent VCE(sat) < 120mV @ 1A RCE(sat) = 77 mΩ PD = 0.725W 6A Peak Pulse Current 25V Forward Blocking Voltage Complementary part number ZXTP749F Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) “Green” Devices (Note 2) • • • • • • Case: SOT-23 Case material: molded Plastic. “Green” molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.008 grams (approximate) Applications • • • MOSFET gate drivers Power switches Motor control SOT-23 Top View Device symbol Pin Configuration Ordering Information Product ZXTN649FTA Notes: Marking 1N7 Reel size (inches) 7 Tape width (mm) 8mm Quantity per reel 3000 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc.‘s “Green” Policy can be found on our website at http://www.diodes.com Marking Information 1N7 = Product type Marking Code ZXTN649F Document Number DS31900 Rev. 2 - 2 1 of 7 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E ( s a t ) TRANSISTOR IN SO T-23 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current (Note 3) Peak Pulse Current Base Current Symbol VCBO VCEO VEBO IC ICM IB Value 35 25 7 3 6 500 Unit V V V A A mA Symbol PD RθJA RθJL TJ, TSTG Value 725 172 79 -55 to +150 Unit mW °C/W °C/W °C Thermal Characteristics Characteristic Power Dissipation at TA = 25°C (Note 4) Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Thermal Resistance, Junction to Lead @ TA = 25°C Operating and Storage Temperature Range Notes: 3. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions 4. For device mounted on FR4 PCB measured at t ≤ 2 Secs. ZXTN649F Document Number DS31900 Rev. 2 - 2 2 of 7 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E ( s a t ) TRANSISTOR IN SO T-23 Thermal Characteristics and Derating information ZXTN649F Document Number DS31900 Rev. 2 - 2 3 of 7 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E ( s a t ) TRANSISTOR IN SO T-23 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO Collector Cutoff Current ICBO Emitter Cutoff Current IEBO Static Forward Current Transfer Ratio (Note 5) Typ 110 35 8.1 <1 <1 200 175 155 50 hFE Collector-Emitter Saturation Voltage (Note 5) VCE(sat) Base-Emitter Turn-On Voltage (Note 5) Base-Emitter Saturation Voltage (Note 5) VBE(on) VBE(sat) Notes: Min 35 25 7 Max 50 0.5 50 320 280 250 85 500 70 200 780 900 120 300 850 1000 Unit V V V nA µA nA mV mV mV mV Test Condition IC = 100 µA IC = 10 mA IE = 100 µA VCB = 28V VCB = 28V, Tamb=100 °C VEB = 5.6V IC = 100mA, VCE = 2V IC = 1A, VCE = 2V IC = 2A, VCE = 2V IC = 6A, VCE = 2V IC =1A, IB = 100mV IC = 3A, IB = 300mV IC = 1A, VCE = 2V IC = 1A, IB = 100mV 5. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2% ZXTN649F Document Number DS31900 Rev. 2 - 2 4 of 7 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E ( s a t ) TRANSISTOR IN SO T-23 Typical Characteristics ZXTN649F Document Number DS31900 Rev. 2 - 2 5 of 7 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E ( s a t ) TRANSISTOR IN SO T-23 Package Outline Dimensions A B C H K M K1 D J F L G SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z X ZXTN649F Document Number DS31900 Rev. 2 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 C E 6 of 7 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E ( s a t ) TRANSISTOR IN SO T-23 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. B. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com ZXTN649F Document Number DS31900 Rev. 2 - 2 7 of 7 www.diodes.com October 2009 © Diodes Incorporated