ZXTP03200BG 200V PNP Low VCE(sat) transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions B Features • • • • C 2 Amps continuous current Up to 5 Amps peak current Very low saturation voltage Enhanced switching performance E Applications • DC-DC conversion Ordering Information Pin out - top view Device Reel size (inches) Tape width (mm) Quantity per reel 7 12 1000 ZXTP03200BGTA Device Marking ZXTP03200BG Issue 1 - August 2008 © Diodes Incorporated 2008 1 www.zetex.com www.diodes.com ZXTP03200BG Absolute Maximum Ratings Parameter Symbol Limit Unit Collector-Base Voltage VCBO -220 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -7 V IC -2 A IB -1 A ICM -5 A PD 1.25 10 W mW/°C PD 1.65 13.2 W mW/°C PD 3 24 W mW/°C PD 5.8 46.5 W mW/°C PD 11.9 95.2 W mW/°C Tj, Tstg -55 to 150 °C Symbol Value Unit RθJA 100 °C/W RθJA 76 °C/W RθJA 41.6 °C/W RθJA 21.5 °C/W RθJL 10.5 °C/W Continuous Collector Current (a) Base Current Peak Pulse Current Power Dissipation at TA =25°C Linear Derating Factor Power Dissipation at TA =25°C Linear Derating Factor Power Dissipation at TA =25°C Linear Derating Factor Power Dissipation at TA =25°C Linear Derating Factor Power Dissipation at TC =25°C Linear Derating Factor (a) (b) (c) (d) (e) Operating and Storage Temperature Range Thermal Resistance Parameter Junction to Ambient Junction to Ambient Junction to Ambient Junction to Ambient Junction to Lead (a) (b) (c) (d) (e) NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still (b) (c) (d) (e) air conditions. Mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. As (c) above measured at t<5 seconds. Junction to Lead from Collector Tab.Typical Issue 1 - August 2008 © Diodes Incorporated 2008 2 www.zetex.com www.diodes.com ZXTP03200BG Thermal Characteristics VCE(sat) Max Power Dissipation (W) -IC Collector Current (A) 10 Limit 1 DC 1s 100m 100ms 10ms 1ms Single Pulse. T amb=25°C 10m 100m 100µs See note (c) 1 10 100 -VCE Collector-Emitter Voltage (V) 3.0 See note (c) 2.5 2.0 See note (b) 1.5 1.0 See note (a) 0.5 0.0 0 20 Max Power Dissipation (W) Thermal Resistance (°C/W) 30 D=0.5 20 Single Pulse 10 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Issue 1 - August 2008 © Diodes Incorporated 2008 80 100 120 140 160 Derating Curve See note (c) D=0.2 60 Temperature (°C) Safe Operating Area 40 40 Single Pulse. T amb=25°C See note (c) 100 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 3 www.zetex.com www.diodes.com ZXTP03200BG Electrical Characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Unit Conditions Collector-Base Breakdown Voltage BVCBO -220 -245 Max. V IC = -100μA Collector-Emitter Breakdown BVCER Voltage Collector-Emitter Breakdown BVCEO voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector-Base Cut-off Current -220 -245 V IC = -1µA, RBE< 1kΩ -200 -225 V IC = -10mA -7 -8.4 V IE = -100μA nA (*) -50 -0.5 μA VCB= -200V VCB= -200V,Tamb=100˚C <1 -10 nA VEB= -6V <1 Emitter Cut-off Current IEBO Collector-Emitter Saturation Voltage VCE(sat) -37 -130 -135 -180 -50 -155 -160 -275 mV mV mV mV IC = -0.1A, IB = -10mA (*) IC = -0.5A, IB = -25mA (*) IC = -1A, IB = -100mA (*) IC = -2A, IB = -400mA Base-Emitter Saturation Voltage VBE(sat) -955 -1100 mV IC = -2A, IB = -400mA Base-Emitter Turn-On Voltage VBE(on) -860 -1000 mV IC = -2A, VCE = -5V Static Forward Current Transfer Ratio hFE Transition Frequency fT Output Capacitance Cobo Delay Time 195 170 50 5 100 100 20 (*) (*) (*) IC = -10mA, VCE = -5V (*) IC = -1A, VCE = -5V (*) IC = -2A, VCE = -5V (*) IC = -5A, VCE = -5V 300 (*) MHz IC = -100mA, VCE= -10V 31 pF f = 50MHz (*) VCB = -10V,f = 1MHz td 21 ns Rise Time tr 18 ns Storage Time ts 680 ns Fall Time tf 75 ns 105 IC = -1A, VCC = -50V, IB1 = -IB2 = -100mA NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. Issue 1 - August 2008 © Diodes Incorporated 2008 4 www.zetex.com www.diodes.com ZXTP03200BG Typical Characteristics 1 0.4 Tamb=25°C IC/IB=10 100m 0.3 - VCE(sat) (V) - VCE(sat) (V) IC/IB=20 IC/IB=10 0.2 150°C 100°C 0.1 IC/IB=5 10m 1m 10m 100m 1 100m - IC Collector Current (A) VCE(sat) v IC 1.0 100°C 200 150 25°C 100 50 -55°C IC/IB=5 25°C - VBE(sat) (V) Typical Gain (hFE) VCE=5V 150°C 300 250 1 - IC Collector Current (A) VCE(sat) v IC 350 25°C -55°C 0.0 10m 0.8 0.6 150°C 0.4 100°C -55°C 0 1m 10m 100m 0.2 1m 1 10m 100m 1 - IC Collector Current (A) - IC Collector Current (A) hFE v IC VBE(sat) v IC 700 VCE=5V -55°C - VBE(on) (V) 0.8 0.6 150°C 0.4 100°C 0.2 1m 10m 100m 1 400 300 Cibo 200 100 Cobo 100m 1 10 100 - Voltage(V) Capacitance v Voltage VBE(on) v IC © Diodes Incorporated 2008 500 0 10m - IC Collector Current (A) Issue 1 - August 2008 f = 1MHz 600 25°C Capacitance (pF) 1.0 5 www.zetex.com www.diodes.com ZXTP03200BG Intentionally left blank Issue 1 - August 2008 © Diodes Incorporated 2008 6 www.zetex.com www.diodes.com ZXTP03200BG Package Information – SOT223 DIM A A1 b b2 C D Millimeters Min Max 1.80 0.02 0.10 0.66 0.84 2.90 3.10 0.23 0.33 6.30 6.70 Issue 1 - August 2008 © Diodes Incorporated 2008 Inches Min Max 0.071 0.0008 0.004 0.026 0.033 0.114 0.122 0.009 0.013 0.248 0.264 7 DIM e e1 E E1 L - Millimeters Min Max 2.30 BSC 4.60 BSC 6.70 7.30 3.30 3.70 0.90 - Inches Min Max 0.0905 BSC 0.181 BSC 0.264 0.287 0.130 0.146 0.355 - www.zetex.com www.diodes.com ZXTP03200BG Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. 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