ZXTP07040DFF 40V, SOT23F, PNP medium power transistor Summary; BVCEO > -40V BVECO > -3V IC(cont) = -3A VCE(sat) < -100mV @ 1A RCE(sat) = 67m⍀ PD = 1.5W Complementary part number ZXTN07045EFF Description C This low voltage PNP transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. B Features E • Low profile SOT23F package • Low saturation voltage • High Gain • High power dissipation E Applications C • Load switches • Battery charging • Siren driver • MOSFET and IGBT gate driver • Motor drive B Pinout - top view Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 8 3000 ZXTP07040DFFTA Device marking 1D2 Issue 1 - September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTP07040DFF Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 V Emitter-collector voltage (reverse blocking) VECO -3 V Emitter-base voltage VEBO -7 V IC -3 A ICM -6 A Base current IB -1 A Power dissipation at Tamb =25°C(a) PD 0.84 W 6.72 mW/°C 1.34 W 10.72 mW/°C 1.50 W 12.0 mW/°C 2.0 W 16.0 mW/°C Tj, Tstg -55 to 150 °C Continuous collector current(c) Peak pulse current Linear derating factor Power dissipation at Tamb PD =25°C(b) Linear derating factor PD Power dissipation at Tamb =25°C(c) Linear derating factor PD Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit ambient(a) R⍜JA 149 °C/W Junction to ambient(b) R⍜JA 93 °C/W Junction to ambient(c) R⍜JA 83 °C/W Junction to ambient(d) R⍜JA 60 °C/W Junction to NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - September 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTP07040DFF Characteristics Issue 1 - September 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTP07040DFF Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO -50 -80 V IC = -100A Collector-emitter breakdown voltage (base open) BVCEO -40 -65 V IC = -10mA (*) Emitter-base breakdown voltage BVEBO -7 -8.3 V IE = -100A Emitter-collector breakdown voltage (reverse blocking) BVECO -3 -8.6 V IE = -100A -50 nA VCB = -36V -20 A VCB = -36V, Tamb= 100°C Collector-base cut-off current ICBO <-1 Max. Unit Conditions Emitter-base cut-off current IEBO <-1 -50 nA VEB = -5.6V Collector-emitter saturation voltage VCE(sat) -110 -180 mV IC = -0.5A, IB = -5mA(*) -80 -100 mV IC = -1A, IB = -100mA(*) -230 -400 mV IC = -1A, IB = -10mA(*) -310 -540 mV IC = -2A, IB = -40mA(*) -250 -390 mV IC = -3A, IB = -150mA(*) Base-emitter saturation voltage VBE(sat) -935 -1040 mV IC = -3A, IB = -150mA(*) Base-emitter turn-on voltage VBE(on) -825 -930 mV IC = -3A, VCE = -2V(*) Static forward current transfer ratio hFE 300 450 800 250 380 IC = -0.5A, VCE = -2V(*) 200 330 IC = -1A, VCE = -2V(*) 80 160 IC = -3A, VCE = -2V(*) 100 200 Transition frequency fT Output capacitance Cobo Delay time td Rise time 30 IC = -10mA, VCE = -2V(*) MHz IC = -50mA, VCE = -5V f = 50MHz 40 pF VCB = -10V, f = 1MHz(*) 20.7 ns tr 12.2 ns Storage time ts 375 ns VCC = -10V, IC = -500mA, IB1 = IB2= -50mA Fall time tf 72 ns NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%. Issue 1 - September 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTP07040DFF Typical characteristics Issue 1 - September 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTP07040DFF Package outline - SOT23F c D b e1 b e L1 L E E1 b E2 A1 R A Dim. Millimeters Inches Min. Max. Min. Max. A 0.80 1.00 0.0315 0.0394 A1 0.00 0.10 0.00 b 0.35 0.45 c 0.10 D 2.80 e e1 Millimeters Inches Min. Max. Max. Max. E 2.30 2.50 0.0906 0.0984 0.0043 E1 1.50 1.70 0.0590 0.0669 0.0153 0.0161 E2 1.10 1.26 0.0433 0.0496 0.20 0.0043 0.0079 L 0.48 0.68 0.0189 0.0268 3.00 0.1102 0.1181 L1 0.30 0.50 0.0153 0.0161 R 0.05 0.15 0.0019 0.0059 O 0° 12° 0° 12° 0.95 ref 1.80 Dim. 2.00 0.0374 ref 0.0709 0.0787 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - September 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com