DIODES ZXTP19020CFF

ZXTP19020CFF
20V, SOT23F, PNP medium power transistor
Summary:
BVCEO > -20V
BVECO > -5V
IC(cont) = -5A
VCE(sat) < 40mV @ 100mA
RCE(sat) = 21m⍀
PD = 1.5W
Complementary part number ZXTN19020CFF
Description
C
Advanced process capability has been used to maximize the
performance of this transistor. The SOT23F package is compatible with
the industry standard SOT23 footprint but offers lower profile and
higher dissipation for applications where power density is of utmost
importance.
B
Features
E
•
High gain
•
Low saturation voltage
•
Low profile high dissipation package
E
Applications
•
Battery charging
•
Load switch
•
DC-DC converters
C
B
Pinout - top view
Ordering information
Device
ZXTP19020CFFTA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
8
3000
Device marking
1D7
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ZXTP19020CFF
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-25
V
Collector-emitter voltage
VCEO
-20
V
Emitter-collector voltage (reverse blocking)
VECO
-5
V
Emitter-base voltage
VEBO
-7
V
IC
-5
A
ICM
-10
A
Base current
IB
-1
A
Power dissipation at Tamb =25°C(a)
PD
0.84
W
6.72
mW/°C
1.34
W
10.72
mW/°C
1.5
W
12.0
mW/°C
2.0
W
16.0
mW/°C
Tj, Tstg
-55 to 150
°C
Continuous collector current(c)
Peak pulse current
Linear derating factor
Power dissipation at Tamb
PD
=25°C(b)
Linear derating factor
PD
Power dissipation at Tamb =25°C(c)
Linear derating factor
PD
Power dissipation at Tamb =25°C(d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Symbol
Value
Unit
ambient(a)
R⍜JA
149.3
°C/W
Junction to ambient(b)
R⍜JA
93.4
°C/W
Junction to ambient(c)
R⍜JA
83.3
°C/W
Junction to ambient(d)
R⍜JA
60
°C/W
Junction to
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
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ZXTP19020CFF
Characteristics
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ZXTP19020CFF
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
BVCBO
-25
-45
V
IC = -100␮A
BVCEO
-20
-30
V
IC = -10mA (*)
Emitter-base breakdown voltage BVEBO
-7
-8.3
V
IE = -100␮A
Emitter-collector breakdown
voltage (reverse blocking)
BVECX
-6
-8.3
V
IE = -100␮A, RBC ⱕ1k⍀ or
0.25V < VBC < -0.25V
Emitter-collector breakdown
voltage (base open)
BVECO
-5
-8.5
V
IE = -100␮A,
Collector-base cut-off current
ICBO
<-1
Max.
Unit Conditions
-50
nA
VCB = -20V
-20
␮A
VCB = -20V, Tamb= 100°C
Emitter-base cut-off current
IEBO
<-1
-50
nA
VEB = -5.6V
Collector-emitter saturation
voltage
VCE(sat)
-30
-40
mV
IC = -1A, IB = -100mA(*)
-50
-70
mV
IC = -1A, IB = -20mA(*)
-75
-120
mV
IC = -2A, IB = -40mA(*)
-105
-135
mV
IC = -5A, IB = -500mA(*)
Base-emitter saturation voltage VBE(sat)
-925 -1050
mV
IC = -5A, IB = -500mA(*)
Base-emitter turn-on voltage
VBE(on)
-815
-950
mV
IC = -5A, VCE = -2V(*)
Static forward current transfer
ratio
hFE
200
350
500
170
300
IC = -1A, VCE = -2V(*)
110
180
IC = -5A, VCE = -2V(*)
Transition frequency
fT
200
Output capacitance
Cobo
52
Delay time
td
Rise time
IC = -100mA, VCE = -2V(*)
MHz IC = -50mA, VCE = -10V
f = 100MHz
70
pF
VCB = -10V, f = 1MHz(*)
66.8
ns
tr
74.9
ns
Storage time
ts
226
ns
VCC = -15V.
IC = -750mA,
IB1 = 15mA, IB2= -15mA.
Fall time
tf
85.5
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
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ZXTP19020CFF
Typical characteristics
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ZXTP19020CFF
Intentionally left blank
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ZXTP19020CFF
Package outline - SOT23F
c
D
b
e1
b
e
L1
L
E
E1
b
E2
A1
R
A
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.80
1.00
0.0315
0.0394
A1
0.00
0.10
0.00
b
0.35
0.45
c
0.10
D
2.80
e
e1
Millimeters
Inches
Min.
Max.
Max.
Max.
E
2.30
2.50
0.0906
0.0984
0.0043
E1
1.50
1.70
0.0590
0.0669
0.0153
0.0161
E2
1.10
1.26
0.0433
0.0496
0.20
0.0043
0.0079
L
0.48
0.68
0.0189
0.0268
3.00
0.1102
0.1181
L1
0.30
0.50
0.0153
0.0161
R
0.05
0.15
0.0019
0.0059
O
0°
12°
0°
12°
0.95 ref
1.80
Dim.
2.00
0.0374 ref
0.0709
0.0787
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTP19020CFF
Definitions
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
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Production has been discontinued
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This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
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© 2007 Published by Zetex Semiconductors plc
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