DIODES ZXTP19020DFF

ZXTP19020DFF
20V, SOT23F, PNP medium power transistor
Summary
BVCEO > -20V
BVECO > -4V
IC(cont) = 5.5A
VCE(sat) < 44mV @ 1A
RCE(sat) = 26mΩ
PD = 1.5W
Complementary part number: ZXTN19020DFF
Description
C
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium
B
Features
E
•
High power dissipation SOT23 package
•
15A peak current
•
Guaranteed gain at a collector current of 10A
•
Very low saturation voltage
Applications
•
MOSFET and IGBT gate driving
•
Power switches
•
Motor control
Ordering information
Device
Reel size
(inches)
Tape width
Quantity per
reel
7
8
3000
ZXTP19020DFFTA
Device marking
© Zetex Semiconductors plc 2007
C
B
1D8
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Pinout - top view
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ZXTP19020DFF
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-25
V
Collector-emitter voltage
VCEO
-20
V
Emitter-collector voltage (reverse blocking)
VECO
-4
V
Emitter-base voltage
VEBO
-7
V
IC
-5.5
A
ICM
-15
A
Base current
IB
-1
A
Power dissipation at Tamb = 25°C(a)
PD
0.84
W
6.72
mW/°C
1.34
W
10.72
mW/°C
1.5
W
12
mW/°C
2
W
16
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Value
Unit
Junction to ambient(a)
RJA
149.3
°C/W
Junction to ambient(b)
RJA
93.4
°C/W
Junction to ambient(c)
RJA
83.3
°C/W
Junction to ambient(d)
RJA
60
°C/W
Junction to case(e)
RJC
38
°C/W
Continuous collector current(c)
Peak pulse current
Linear derating factor
Power dissipation at Tamb =
PD
25°C(b)
Linear derating factor
PD
Power dissipation at Tamb = 25°C(c)
Linear derating factor
PD
Power dissipation at Tamb = 25°C(d)
linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs
(e) Junction to case from collector tab
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ZXTP19020DFF
Characteristics
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ZXTP19020DFF
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
BVCBO
-25
Collector-emitter breakdown
voltage (base open)
BVCEO
Emitter-collector breakdown
voltage (reverse blocking)
Max.
Unit
Conditions
-55
V
IC = -100A
-20
-50
V
IC = -10mA (*)
BVECX
-4
-8.6
V
IE = -100A, RBC < 1kΩ or
0.25V > VBC > -0.25V
Emitter-collector breakdown
voltage (base open)
BVECO
-4
-8.6
V
IE = -100A
Emitter-base breakdown
voltage
BVEBO
-7
-8.2
V
IE = -100A
Collector-base cut-off current
ICBO
<-1
-50
-0.5
nA
A
VCB = -25V
VCB = -25V, Tamb= 100°C
Emitter-base cut-off current
IEBO
<-1
-50
nA
VEB = -5.6V
Collector-emitter saturation
voltage
VCE(sat)
-37
-44
mV
IC = -1A, IB = -100mA(*)
-90
-125
mV
IC = -1A, IB = -10mA(*)
-105
-140
mV
IC = -2A, IB = -40mA(*)
-160
-210
mV
IC = -5A, IB = -250mA(*)
-145
-175
mV
IC = -5.5A, IB = -550mA(*)
Base-emitter saturation
voltage
VBE(sat)
-975
-1050
mV
IC = -5.5A, IB = -550mA(*)
Base-emitter turn-on voltage
VBE(on)
-830
-900
mV
IC = -5.5A, VCE = -2V(*)
300
450
900
200
310
IC = -2A, VCE = -2V(*)
85
130
IC = -5.5A, VCE = -2V(*)
25
50
IC = -10A, VCE = -2V(*)
20
IC = -15A, VCE = -2V(*)
Static forward current
transfer ratio
Transition frequency
hFE
fT
176
IC = -100mA, VCE = -2V(*)
MHz
IC = -50mA, VCE = -10V
f = 50MHz
400
pF
VEB = -0.5V, f = 1MHz(*)
45
pF
VCB = -10V, f = 1MHz(*)
IC = -1A, VCC = -10V
IB1 = -IB2= -50mA.
Input capacitance
Cibo
Output capacitance
Cobo
36
Delay time
td
23
ns
Rise time
tr
18.4
ns
Storage time
ts
266
ns
Fall time
tf
49.6
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
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ZXTP19020DFF
Typical characteristics
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ZXTP19020DFF
SOT23F Package outline
c
D
b
e1
b
e
L1
L
E
E1
b
A1
R
A
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.80
1.00
0.0315
0.0394
A1
0.00
0.10
0.00
b
0.35
0.45
c
0.10
D
2.80
e
e1
Millimeters
Inches
Min.
Max.
Min.
Max.
E
2.30
2.50
0.0906
0.0984
0.0043
E1
1.50
1.70
0.0590
0.0669
0.0153
0.0161
L
0.48
0.68
0.0189
0.0268
0.20
0.0043
0.0079
L1
0.30
0.50
0.0153
0.0161
3.00
0.1102
0.1181
R
0.05
0.15
0.0019
0.0059
O
0°
12°
0°
12°
-
-
-
-
-
0.95 ref
1.80
Dim.
2.00
0.0374 ref
0.0709
0.0787
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTP19020DFF
Intentionally left blank
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ZXTP19020DFF
Definitions
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Future device intended for production at some point. Samples may be available
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© 2007 Published by Zetex Semiconductors plc
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