ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC(cont) = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28mV PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Features • Higher power dissipation SOT89 package • High gain • High peak current • Low saturation voltages • 4V reverse blocking voltage E Applications • Power disconnect switch • Battery chargers • High side drivers • Motor drive E B Ordering information Device ZXTP19020DZTA C C Pinout - top view Reel size (inches) Tape width (mm) Quantity per reel 7 12 1000 Device marking 1M1 Issue 1- February 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXTP19020DZ Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage VCBO -25 V Collector-Emitter voltage VCEO -20 V Emitter-Collector voltage (reverse blocking) VECO -4 V Emitter-Base voltage VEBO -7 V Continuous Collector current(c) IC -6 A Base current IB -1 A Peak pulse current ICM -15 A Power dissipation at TA =25°C(a) PD 1.1 W 8.8 mW/°C 1.8 W 14.4 mW/°C Linear derating factor PD Power dissipation at TA =25°C(b) Linear derating factor 2.4 W 19.2 mW/°C 4.46 W 35.7 mW/°C 26.7 W 213 mW/°C Tj, Tstg -55 to 150 °C PD Power dissipation at TA =25°C(c) Linear derating factor PD Power dissipation at TA =25°C(d) Linear derating factor PD Power dissipation at TC =25°C(e) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit ambient(a) RUJA 117 °C/W Junction to ambient(b) RUJA 68 °C/W Junction to ambient(c) RUJA 51 °C/W Junction to ambient(d) RUJA 117 °C/W Junction to case(e) RUJC 4.69 °C/W Junction to NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical Issue 1- February 2008 © Zetex Semiconductors plc 2008 2 www.zetex.com ZXTP19020DZ Thermal characteristics Collector Current (A) CE(sat) Limited 1 DC 1s 100ms 100m 10ms Single Pulse T 1ms =25°C 100µs amb see note (c) C -I Max Power Dissipation (W) V 10 10m 100m 1 -V CE 10 Collector-Emitter Voltage (V) Safe Operating Area Issue 1- February 2008 © Zetex Semiconductors plc 2008 2.4 see note (c) 2.0 see note (b) 1.6 see note (a) 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 3 www.zetex.com ZXTP19020DZ 120 100 T 100 =25°C Maximum Power (W) Thermal Resistance (°C/W) Thermal characteristics amb see note (a) 80 60 40 D=0.5 D=0.2 Single Pulse 20 D=0.05 D=0.1 0 100µ 1m 10m 100m 1 10 100 Single Pulse T 10 1 100µ 1k 1m Pulse Width (s) =25°C Maximum Power (W) Thermal Resistance (°C/W) T amb see note (b) 50 D=0.5 30 Single Pulse D=0.2 D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 T =25°C amb see note (b) 10 1 100µ 1k 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation T =25°C Maximum Power (W) Thermal Resistance (°C/W) 1k 100 50 20 100 Single Pulse Pulse Width (s) Transient Thermal Impedance 30 10 100 60 40 1 Pulse Width (s) 70 20 10m 100m Pulse Power Dissipation Transient Thermal Impedance 40 =25°C amb see note (a) amb see note (c) D=0.5 Single Pulse D=0.2 10 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 =25°C amb 10 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) © Zetex Semiconductors plc 2008 T see note (c) 1 100µ 1k Pulse Power Dissipation Transient Thermal Impedance Issue 1- February 2008 Single Pulse 4 www.zetex.com ZXTP19020DZ Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage (reverse blocking) Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base breakdown voltage Collector-Base cut-off current Symbol BVCBO Min. -25 Typ. -55 Max. Unit V Conditions IC = -100µA BVCEO -20 -50 V IC= -10mA (*) BVECX -4 -8.6 V IE = -100µA, RBC < 1kΩ or 0.25V > VBC > -0.25V BVECO -4 -8.6 V IE = -100µA BVEBO -7 -8.2 V IE = -100µA ICBO <1 50 0.5 nA µA VCB = -25V VCB = -25V, Tamb=100°C Emitter cut-off current IEBO <1 -50 nA VEB = -5.6V Collector-Emitter saturation voltage VCE(sat) -40 -100 -115 -225 -47 -130 -145 -275 mV mV mV mV IC = -1A, IB = -100mA(*) IC = -1A, IB = -10mA(*) IC = -2A, IB = -40mA(*) IC = -6A, IB = -300mA(*) Base-Emitter saturation voltage Base-Emitter turn-on voltage Static forward current transfer ratio VBE(sat) -1000 -1100 mV IC = -6A, IB = -300mA(*) VBE(on) -865 -1000 mV IC = -6A, VCE = -2V(*) 450 290 110 25 900 Transition frequency fT Input capacitance Cibo Output capacitance Cobo 36 Delay time td 23 ns Rise time tr 18.4 ns Storage time ts 266 ns Fall time tf 49.6 ns hFE 300 200 65 176 IC = -100mA, VCE = -2V(*) IC = -2A, VCE = -2V(*) IC = -6A, VCE = -2V(*) IC = -15A, VCE = -2V(*) MHz IC = -50mA, VCE = -10V f = 50MHz 400 pF VEB = -0.5V, f = 1MHz(*) 45 pF VCB = -10V, f = 1MHz(*) IC = -1A, VCC = -10V, IB1 = -IB2 = -50mA NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. Issue 1- February 2008 © Zetex Semiconductors plc 2008 5 www.zetex.com Typical characteristics 1 0.4 Tamb=25°C I /I =10 C I /I =100 C B B (V) I /I =50 B 10m CE(SAT) C I /I =20 C - V CE(SAT) - V (V) 0.3 100m B 0.2 150°C 100°C 0.1 25°C I /I =10 C B -55°C 1m 0.0 1m 10m 100m - I 1 10 10m 100m Collector Current (A) C V - I V CE(SAT) C 10 Collector Current (A) C v I CE(SAT) 1 v I C 1.2 150°C V 800 C 500 1.0 0.8 25°C 400 300 0.6 0.4 200 -55°C (V) 600 -55°C 25°C 0.8 BE(SAT) 100°C B 1.0 - V 1.2 I /I =10 700 1.4 Typical Gain (hFE ) Normalised Gain =2V CE 1.6 0.6 150°C 100°C 0.4 100 0.2 0.0 0.2 0 1m 10m - I 100m 1 10 1m 10m - I Collector Current (A) C h FE C v I 100m V C 1 10 Collector Current (A) BE(SAT) v I C 1.2 V 100 =2V f = 1MHz CE 1.0 Capacitance (pF) -55°C 0.8 0.6 - V BE(ON) (V) 25°C 150°C 0.4 100°C 60 40 20 Cobo 0 0.2 1m 80 10m - I 100m 1 2 10 V BE(ON) Issue 1- February 2008 © Zetex Semiconductors plc 2008 4 6 8 10 12 14 16 18 20 - Voltage(V) Collector Current (A) C Capacitance v Voltage v I C 6 www.zetex.com ZXTP19020DZ Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 DIM Millimeters Inches Min Max Min Max E 2.29 2.60 0.090 0.102 0.022 E1 2.13 2.29 0.084 0.090 0.014 0.019 e 1.50 BSC 0.059 BSC 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 1.52 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1- February 2008 © Zetex Semiconductors plc 2008 7 www.zetex.com ZXTP19020DZ Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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