DIODES ZXTP2009Z

ZXTP2009Z
40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR
IN SOT89
SUMMARY
BVCEO = -40V : RSAT = 29m ; IC = -5.5A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 40V PNP transistor
offers low on state losses making it ideal for use in DC-DC circuits, line
switching and various driving and power management functions.
FEATURES
SOT89
• Extremely low equivalent on-resistance
• 5.5 amps continuous current
• Up to 15 amps peak current
• Very low saturation voltages < -60mV @ -1A
APPLICATIONS
• DC - DC converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
ZXTP2009ZTA
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
7”
12mm
1,000 units
DEVICE MARKING
53Z
TOP VIEW
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SEMICONDUCTORS
ZXTP2009Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV CBO
-50
V
Collector-base voltage
BV CBS
-50
V
Collector-emitter voltage
BV CEO
-40
V
Emitter-base voltage
BV EBO
-7.5
V
Continuous collector current (b)
IC
-5.5
A
Peak pulse current
I CM
-15
A
Power dissipation at T A =25°C (a)
PD
0.9
W
7.2
mW/°C
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
PD
Power dissipation at T A =25°C (c)
PD
Linear derating factor
Power dissipation at T A =25°C (d)
PD
Linear derating factor
T j , T stg
Operating and storage temperature range
1.5
W
12
mW/°C
2.1
W
16.8
mW/°C
3
W
24
mW/°C
-55 to 150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient (a)
R ⍜JA
139
°C/W
Junction to ambient
(b)
R ⍜JA
83
°C/W
Junction to ambient
(c)
R ⍜JA
60
°C/W
Junction to ambient
(d)
R ⍜JA
42
°C/W
NOTES
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB measured at t⬍ 5 secs.
ISSUE 1 - JUNE 2005
SEMICONDUCTORS
2
ZXTP2009Z
CHARACTERISTICS
ISSUE 1 - JUNE 2005
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SEMICONDUCTORS
ZXTP2009Z
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
BV CBO
-50
-90
V
I C =-100␮A
Collector-emitter breakdown voltage
BV CES
-50
-90
V
I C =-100␮A
Collector-emitter breakdown voltage
BV CEO
-40
-58
V
I C =-10mA*
Emitter-base breakdown voltage
BV EBO
-7.5
-8.3
V
I E =-100␮A
Collector cut-off current
I CBO
⬍1
-20
nA
V CB =-40V
Collector cut-off current
I CES
⬍1
-20
nA
V CB =-32V
Emitter cut-off current
I EBO
⬍1
-20
nA
V EB =-6V
Collector-emitter saturation voltage
V CE(SAT)
-15
-30
mV
I C =-0.1A, I B =-10mA*
-44
-60
mV
IC=-1A, IB=-100mA*
-50
-70
mV
IC=-1A, IB=-50mA*
-120
-165
mV
IC=-1A, IB=-10mA*
-70
-80
mV
IC=-2A, IB=-200mA*
-125
-175
mV
IC=-2A, IB=-40mA*
-130
-175
mV
IC=-3.5A, IB=-175mA*
-162
-185
mV
IC=-5.5A, IB=-550mA*
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
V BE(SAT)
V BE(ON)
H FE
MAX. UNIT CONDITIONS
-820
-900
mV
I C =-2A, I B =-40mA*
-1000
-1075
mV
IC=-5.5A, IB=-550mA*
-778
-850
mV
I C =-2A, V CE =-2V*
-869
-950
mV
IC=-5.5A, VCE=-2V*
200
390
200
350
170
290
IC=-2A, VCE=-2V*
110
175
IC=-5.5A, VCE=-2V*
152
I C =-10mA, V CE =-2V*
IC=-0.5A, VCE=-2V*
550
MHz IC =-50mA, VCE =-10V
f=100MHz
Transition frequency
fT
Output capacitance
C OBO
53
pF
ns
Switching times
Switching times
td
18
tr
17
ts
325
tr
60
td
55
tr
107
ts
264
tr
103
V CB =-10V, f=1MHz*
I C =-1A, V CC =-10V,
I B1 =I B2 =-100mA
ns
I C =-2A, V CC =-30V,
I B1 =I B2 =-20mA
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
ISSUE 1 - JUNE 2005
SEMICONDUCTORS
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ZXTP2009Z
TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2005
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SEMICONDUCTORS
ZXTP2009Z
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
e
1.40
1.50
0.055
0.059
b
0.38
0.48
0.015
0.019
E
3.75
4.25
0.150
0.167
b1
-
0.53
-
0.021
E1
-
2.60
-
0.102
b2
1.50
c
0.28
1.80
0.060
0.071
G
2.90
3.00
0.114
0.118
0.44
0.011
0.017
H
2.60
2.85
0.102
0.112
D
4.40
4.60
0.173
0.181
-
-
-
-
-
© Zetex Semiconductors plc 2005
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ISSUE 1 - JUNE 2005
SEMICONDUCTORS
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