ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES • 3 amps continuous current SOT89 • Up to 10 amps peak current • Very low saturation voltages APPLICATIONS • Motor driving • Line switching • High side switches • Subscriber line interface cards (SLIC) ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL 7" 12mm embossed 1,000 units ZXTP2014ZTA PINOUT DEVICE MARKING 955 TOP VIEW ISSUE 2 - AUGUST 2005 1 SEMICONDUCTORS ZXTP2014Z ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO -180 V Collector-emitter voltage BV CEO -140 V BV EBO -7 V Emitter-base voltage Continuous collector current (a) Peak pulse current Power dissipation at T A =25°C (a) IC -3 A I CM -10 A PD 1.5 W 12 mW/°C Linear derating factor Power dissipation at T A =25°C (b) PD Linear derating factor Operating and storage temperature range T j , T stg 2.1 W 16.8 mW/°C -55 to 150 °C THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Junction to ambient (a) R JA 83 °C/W (b) R JA 60 °C/W Junction to ambient NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 2 - AUGUST 2005 SEMICONDUCTORS 2 ZXTP2014Z CHARACTERISTICS ISSUE 2 - AUGUST 2005 3 SEMICONDUCTORS ZXTP2014Z ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO -180 -200 V I C = -100A Collector-emitter breakdown voltage BV CER -180 -200 V I C = -1A, RB ⱕ 1k⍀ Collector-emitter breakdown voltage BV CEO -140 -160 V I C = -10mA* Emitter-base breakdown voltage BV EBO -7.0 -8.0 V I E = -100A Collector cut-off current I CBO Collector cut-off current ⬍1 ⬍1 I CER Rⱕ1k⍀ MAX. UNIT CONDITIONS -20 nA VCB = -150V -0.5 A -20 nA VCB = -150V, Tamb=100⬚C V CB = -150V -0.5 A VCB = -150V, Tamb=100⬚C V EB = -6V Emitter cut-off current I EBO ⬍1 -10 nA Collector-emitter saturation voltage V CE(SAT) -37 -60 mV I C = -0.1A, I B = -5mA* -50 -75 mV I C = -0.5A, I B = -50mA* I C = -1A, I B = -100mA* -80 -115 mV -255 -330 mV Base-emitter saturation voltage V BE(SAT) -910 -1010 mV I C = -3A, I B = -300mA* I C = -3A, I B = -300mA* Base-emitter turn on voltage V BE(ON) -800 -900 mV I C = -3A, V CE = -5V* Static forward current transfer ratio h FE 100 225 100 200 45 100 I C = -10mA, V CE = -5V* I C = -1A, V CE = -5V* I C = -3A, V CE = -5V* 300 I C = -10A, V CE = -5V* 5 Transition frequency fT 120 MHz I C = -100mA, VCE = -10V f=50MHz Output capacitance C OBO 33 pF Switching times t ON 42 ns t OFF 636 V CB = -10V, f= 1MHz* I C = -1A, V CC = -50V, I B1 = -I B2 = -100mA * Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. ISSUE 2 - AUGUST 2005 SEMICONDUCTORS 4 ZXTP2014Z TYPICAL CHARACTERISTICS ISSUE 2 - AUGUST 2005 5 SEMICONDUCTORS ZXTP2014Z PACKAGE OUTLINE PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059 b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167 b1 - 0.53 - 0.021 E1 - 2.60 - 0.102 b2 1.50 c 0.28 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118 0.44 0.011 0.017 H 2.60 2.85 0.102 0.112 D 4.40 4.60 0.173 0.181 - - - - - © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - AUGUST 2005 SEMICONDUCTORS 6