DIODES ZXTP2039FTC

ZXTP2039F
SOT23 80 volt PNP silicon planar medium power
transistor
Summary
V(BR)CEV > -80V
V(BR)CEO > -60V
Ic(cont) = -1A
Vce(sat) < -600mV @ -1A
Complementary type
ZXTN2038F
Description
This transistor combines high gain, high current operation and low saturation voltage making it
ideal for power MOSFET gate driving and low loss power switching.
Features
■ Low saturation voltage for reduced power dissipation
■ 1 to 2 amp high current capability
■ Pb-free
■ SOT23 package
Applications
■ Power MOSFET gate driving
■ Low loss power switching
Ordering information
Pin out - top view
Device
Reel size
Tape width
Quantity per reel
ZXTP2039FTA
7”
8mm
3,000
ZXTP2039FTC
13”
8mm
10,000
Device marking
P39
Issue 3 - August 2005
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ZXTP2039F
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-80
V
Collector-emitter voltage
VCEV
-80
V
Collector-emitter voltage
VCEO
-60
V
Emitter-base voltage
VEBO
-5.0
V
Peak pulse current
ICM
-2
A
Continuous collector current*
IC
-1
A
Peak base current
IBM
-1
A
Power dissipation @ TA=25°C*
PD
350
mW
Operating and storage temperature
Tj:Tstg
-55 to +150
°C
NOTES:
* For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
Issue 3 - August 2005
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ZXTP2039F
Electrical characteristics (@TAMB = 25°C)
Parameter
Symbol
Min.
Collector-base breakdown
voltage
V(BR)CBO
Collector-emitter breakdown
voltage
Max.
Unit
Conditions
-80
V
IC=-100␮A
V(BR)CEV
-80
V
IC=-1␮A
-0.3V < VBE < 1V
Collector-emitter breakdown
voltage
V(BR)CEO
-60
V
IC=-10mA*
Emitter-base breakdown
voltage
V(BR)EBO
-5
V
IE=-100µA
Collector-emitter cut-off current
ICES
-100
nA
VCE=-60V
Collector-base cut-off current
ICBO
-100
nA
VCB=-60V
Emitter-base cut-off current
IEBO
-100
nA
VEB=-4V
Static forward current transfer
ratio
hFE
Collector-emitter saturation
voltage
IC=-1mA, VCE=-5V
100
100
IC=-500mA, VCE=-5V*
300
80
IC=-1A, VCE=-5V*
15
IC=-2A, VCE=-5V*
VCE(sat)
-0.2
-0.3
V
V
V
IC=-100mA, IB=-2mA*
-0.6
IC=-500mA, IB=-50mA*
IC=-1A, IB=-100mA*
Base-emitter saturation voltage
VBE(sat)
-1.2
V
IC=-1A, IB=-100mA*
Base-emitter turn-on voltage
VBE(on)
-1.0
V
IC=-1A, VCE=-5V*
Transition frequency
fT
Output capacitance
Cobo
150
IC=-50mA, VCE=-10V
f=100MHz
10
pF
VCB=-10V, f=1MHz
NOTES:
* Measured under pulsed conditions. Pulse width=300␮S. Duty cycle ⱕ2%
Spice parameter data is available upon request for this device
Issue 3 - August 2005
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ZXTP2039F
Typical characteristics
0.6
+25 ° C
0.5
0.5
0.4
0.4
VCE(sat) -(V)
VCE(sat) -(V)
0.6
0.3
IC/IB=10
IC/IB=50
0.2
IC/IB=10
0.3
-55 °C
+25 °C
+100 °C
0.2
0.1
0.1
0
0
1mA
400
10mA
1A
100mA
10A
10mA
1mA
100mA
1A
IC-Collector Current
IC-Collector Current
VCE(sat) v IC
VCE(sat) v IC
VCE=5V
10A
IC/IB=10
V BE(sat) - (V)
+100 °C
300
+25 °C
200
100
-55 °C
0
1mA
1.2
0.6
-55 °C
+25 °C
+100 °C
0.4
0
10mA
100mA
1A
1mA
10A
10mA
100mA
1A
IC-Collector Current
IC-Collector Current
hFE V IC
VBE(sat) v IC
10A
10
VCE=5V
1.0
VBE(on) - (V)
0.8
0.2
I C -Collector Current (A)
h FE - Typical Gain
1.0
0.8
0.6
-55 °C
+25 °C
+100 °C
0.4
0.2
1
0.1
DC
1s
100ms
10ms
1ms
100us
0.01
0
1mA
10mA
100mA
1A
0.1V
10A
IC-Collector Current
VBE(on) v IC
Issue 3 - August 2005
© Zetex Semiconductors plc 2005
1V
10V
100V
VCE - Collector Emitter Voltage (V)
Safe Operating Area
4
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ZXTP2039F
Packaging details - SOT23
L
H
N
G
D
3 leads
M
A
B
C
K
F
Package dimensions
Dimensions in inches are control dimensions, dimensions in millimeters are approximate.
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
-
1.10
D
0.37
F
0.085
G
Dim.
Millimeters
Inches
Min.
Max.
Max.
Max.
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
-
0.043
L
2.10
2.50
0.083
0.0985
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
0.15
0.0034
0.0059
N
0.95 Nom.
-
-
1.90 Nom.
0.075 Nom.
-
0.0375 Nom.
-
-
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United Kingdom
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