ZETEX ZXTP2041FTC

ZXTP2041F
SOT23 40 volt PNP silicon planar medium power
transistor
Summary
V(BR)CEO > -40V
Ic(cont) = -1A
Vce(sat) < -500mV @ -1A
Complementary type
ZXTP2041F
Description
This transistor combines high gain, high current operation and low saturation voltage making it
ideal for power MOSFET gate driving and low loss power switching.
Features
■ Low saturation voltage for reduced power dissipation
■ 1 to 2 amp high current capability
■ Pb-free
■ SOT23 package
Applications
■ Power MOSFET gate driving
■ Low loss power switching
Ordering information
Device
Reel size
Tape width
Quantity per reel
ZXTP2041FTA
7”
8mm
3,000
ZXTP2041FTC
13”
8mm
10,000
Pin out - top view
Device marking
P41
Issue 3 - November 2005
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ZXTP2041F
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-40
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5.0
V
Peak pulse current
ICM
-2
A
Continuous collector current*
IC
-1
A
Peak base current
IBM
-1
A
Power dissipation @ TA=25°C*
PD
350
mW
Operating and storage temperature
Tj:Tstg
-55 to +150
°C
NOTES:
* For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
Issue 3 - November 2005
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ZXTP2041F
Electrical characteristics (@TAMB = 25°C)
Parameter
Symbol
Min.
Collector-base breakdown
voltage
V(BR)CBO
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Max.
Unit
Conditions
-40
V
IC=-100␮A
V(BR)CEO
-40
V
IC=-10mA*
V(BR)EBO
-5
V
IE=-100␮A
Collector-emitter cut-off current
ICES
-100
nA
VCE=-30V
Collector-base cut-off current
ICBO
-100
nA
VCB=-30V
Emitter-base cut-off current
IEBO
-100
nA
VEB=-4V
Static forward current transfer
ratio
hFE
Collector-emitter saturation
voltage
IC=-1mA, VCE=-5V
300
300
IC=-100mA, VCE=-5V*
800
250
IC=-500mA, VCE=-5V*
160
IC=-1A, VCE=-5V*
30
IC=-2A, VCE=-5V*
VCE(sat)
-0.2
V
IC=-100mA, IB=-1mA*
-0.3
V
IC=-500mA, IB=-20mA*
-0.5
V
IC=-1A, IB=-100mA*
Base-emitter saturation voltage
VBE(sat)
-1.1
V
IC=-1A, IB=-50mA*
Base-emitter turn-on voltage
VBE(on)
-1.0
V
IC=-1A, VCE=-5V*
Transition frequency
fT
Output capacitance
Cobo
150
IC=-50mA, VCE=-10V
f=100MHz
10
pF
VCB=-10V, f=1MHz
NOTES:
* Measured under pulsed conditions. Pulse width=300 ␮S. Duty cycle ⱕ2%
Spice parameter data is available upon request for this device
Issue 3 - November 2005
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ZXTP2041F
Packaging details - SOT23
L
H
N
G
D
3 leads
M
A
B
C
K
F
Package dimensions
Dimensions in inches are control dimensions, dimensions in millimeters are approximate.
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
-
1.10
D
0.37
F
0.085
G
Dim.
Millimeters
Inches
Min.
Max.
Max.
Max.
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
-
0.043
L
2.10
2.50
0.083
0.0985
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
0.15
0.0034
0.0059
N
0.95 Nom.
-
-
1.90 Nom.
0.075 Nom.
-
0.0375 Nom.
-
-
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Zetex Inc
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Zetex Semiconductors plc
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Oldham, OL9 9LL
United Kingdom
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Fax: (49) 89 45 49 49 49
[email protected]
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Fax: (44) 161 622 4446
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This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 3 - November 2005
© Zetex Semiconductors plc 2005
4
www.zetex.com