ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC(cont) = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features • High power dissipation SOT23 package • High peak current • Low saturation voltage • 15V forward blocking voltage • 3V reverse blocking voltage E Applications • MOSFET and IGBT gate driving • DC - DC converters • Motor drive • High side driver • Load disconnect switch E C B Pinout - top view Ordering information Device ZXTP25015DFHTA Reel size (inches) Tape width (mm) Quantity per reel 7 8 3,000 Device marking 1A7 Issue 2 - March 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXTP25015DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -15 V Emitter-collector voltage (reverse blocking) VECO -3 V Emitter-base voltage VEBO -7 V Continuous collector current(b) IC -4 A Base current IB -1 A Peak pulse current ICM -10 A Power dissipation at Tamb =25°C(a) PD 0.73 W 5.84 mW/°C 1.05 W 8.4 mW/°C 1.25 W 9.6 mW/°C 1.81 W 14.5 mW/°C Tj, Tstg -55 to 150 °C Symbol Limit Unit Junction to ambient(a) R⍜JA 171 °C/W Junction to ambient(b) R⍜JA 119 °C/W Junction to ambient(c) R⍜JA 100 °C/W Junction to ambient(d) R⍜JA 69 °C/W Linear derating factor PD Power dissipation at Tamb =25°C(b) Linear derating factor PD Power dissipation at Tamb =25°C(c) Linear derating factor PD Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 2 - March 2008 © Zetex Semiconductors plc 2008 2 www.zetex.com ZXTP25015DFH Characteristics Issue 2 - March 2008 © Zetex Semiconductors plc 2008 3 www.zetex.com ZXTP25015DFH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Unit Conditions Collector-base breakdown voltage BVCBO -15 -35 Max. V IC = -100A Collector-emitter breakdown voltage (base open) BVCEO -15 -30 V IC = -10mA (*) Emitter-base breakdown voltage BVEBO -7 -8.4 V IE = -100A Emitter-collector breakdown voltage (base open) BVECO -3 -8.2 V IE = -100A(*) Collector-base cut-off current ICBO <-1 -50 -20 nA A VCB = -12V VCB = -12V, Tamb= 100°C Emitter-base cut-off current IEBO <-1 -50 nA VEB = -5.6V Collector-emitter saturation voltage VCE(sat) -45 -55 mV IC = -1A, IB = -100mA(*) -110 -150 mV IC = -1A, IB = -10mA(*) -130 -175 mV IC = -2A, IB = -40mA(*) -160 -210 mV IC = -4A, IB = -200mA(*) -165 -220 mV IC = -5A, IB = -500mA(*) Base-emitter saturation voltage VBE(sat) -930 -1050 mV IC = -4A, IB = -200mA(*) Base-emitter turn-on voltage VBE(on) -810 -900 mV IC = -4A, VCE = -2V(*) 300 450 900 200 315 IC = -1A, VCE = -2V(*) 90 145 IC = -4A, VCE = -2V(*) 30 IC = -10A, VCE = -2V(*) Static forward current transfer hFE ratio Transition frequency fT 295 Output capacitance COBO 25 Delay time td Rise time IC = -10mA, VCE = -2V(*) MHz IC = -50mA, VCE = -10V f = 100MHz 30 pF VCB = -10V, f = 1MHz(*) 33.8 ns tr 43.5 ns Storage time ts 196 ns VCC = -15V. IC = -750mA, IB1 = IB2= -15mA Fall time tf 51.7 ns NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. Issue 2 - March 2008 © Zetex Semiconductors plc 2008 4 www.zetex.com ZXTP25015DFH Typical characteristics Issue 2 - March 2008 © Zetex Semiconductors plc 2008 5 www.zetex.com ZXTP25015DFH Package outline - SOT23 E e e1 b 3 leads L1 D E1 A A1 Dim. L c Millimeters Inches Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 - - - - - e 0.95 NOM Min. 0.037 NOM Max. Inches 1.90 NOM Min. Max. 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermann-Park D-81541 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 2 - March 2008 © Zetex Semiconductors plc 2008 6 www.zetex.com