DIODES ZXTP5401GTA

ZXTP5401G
150V, SOT223, PNP High voltage transistor
Summary
BVCEO > -150V
BVEBO > -5V
IC(cont) = -600mA
PD = 2W
Complementary part number ZXTN5551G
Description
C
A high voltage PNP transistor in a surface mount package
Features
•
150V rating
•
SOT223 package
B
E
Applications
•
E
High voltage amplification
C
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity per
reel
ZXTP5401GTA
7
12
1000
ZXTP5401GTC
13
12
4000
C
B
Pinout - top view
Device marking
ZXTP
5401
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ZXTP5401G
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-160
V
Collector-emitter voltage
VCEO
-150
V
Emitter-base voltage
VEBO
-5
V
Continuous collector current(a)
IC
-600
mA
Peak collector current
IC
-2
A
Power dissipation at TA =25°C(a)
PD
2
W
16
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Limit
Unit
R⍜JA
62.5
°C/W
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient(a)
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz weight
copper, in still air conditions.
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ZXTP5401G
Typical characteristics
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Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
BVCBO
-160
-270
V
IC = -100␮A,
Collector-emitter breakdown
voltage (base open)
BVCEO
-150
-240
V
IC = -1mA *
Emitter-base breakdown
voltage
BVEBO
-5
-8.1
V
IE = -10␮A
Collector cut-off current
ICBO
Collector-emitter saturation
voltage
VCE(sat)
Base-emitter saturation
voltage
VBE(sat)
Static forward current transfer hFE
ratio
Transition frequency
fT
Output capacitance
COBO
Delay time
t(d)
Rise time
<-1
Max.
Unit Conditions
-50
nA
VCB = -120V
-50
␮A
VCB = -120V, Tamb= 100°C
-50
-200
mV
IC = -10mA, IB = -1mA *
-70
-500
mV
IC = -50mA, IB = -5mA *
-700
-1000
mV
IC = -10mA, IB = -1mA *
-750
-1000
mV
IC = -50mA, IB = -5mA *
50
135
IC = -1mA, VCE = -5V *
60
135
50
130
IC = -50mA, VCE = -5V *
100
MHz IC = -10mA, VCE = -10V
f = 100MHz
IC = -10mA, VCE = -5V *
240
pF
VCB = -10V, f = 1MHz *
386
ns
t(r)
202
ns
VCC = -50V. IC = -100mA,
IB1 = IB2= -10mA.
Storage time
t(s)
1720
ns
Fall time
t(f)
275
ns
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ZXTP5401G
Characteristics
-0.8
VCE(sat) - (Volts)
IC/IB=10
-0.6
-0.4
-0.2
0
-0.0001
-0.001
-0.01
-0.1
-1
IC - Collector Current (Amps)
VCE(sat) v IC
-1.4
80
-1.2
VCE=-10V
60
VBE(sat) - (Volts)
hFE - Normalised Gain (%)
100
40
20
IC/IB=10
-1.0
-0.8
-0.6
0
-0.0001
-0.001
-0.01
-0.1
-0.0001
1
-0.001
-0.01
-0.1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
-1
-1.4
VBE - (Volts)
-1.2
VCE=-10V
-1.0
-0.8
-0.6
-0.0001
-0.001
-0.01
-0.1
-1
IC - Collector Current (Amps)
VBE(on) v IC
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ZXTP5401G
Intentionally left blank
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ZXTP5401G
Package outline - SOT223
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
A
-
1.80
-
0.071
D
6.30
6.70
0.248
0.264
A1
0.02
0.10
0.0008
0.004
e
2.30 BSC
0.0905 BSC
A2
1.55
1.65
0.0610
0.0649
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTP5401G
Definitions
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or
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
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“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
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© 2007 Published by Zetex Semiconductors plc
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