DIODES ZXTP749FTA

A Product Line of
Diodes Incorporated
ZXTP749F
25V PNP LOW SATURATION TRANSISTOR IN SOT23
Features
Mechanical Data
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•
•
•
•
•
•
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BVCEO > -25V
BVCEO > -35V forward blocking voltage
IC = -3A Continuous Collector Current
Low Saturation Voltage, VCE(SAT) < -150mV @ -1A.
RCE(sat) = 87mΩ for a low equivalent on-resistance
725mW power dissipation
hFE characterised up to -6A for high current gain hold-up
Complementary NPN Type: ZXTN649F
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
•
Case: SOT23
Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (approximate)
Application
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•
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MOSFET gate drivers
Power switching in automotive and industrial applications
Motor drive and control
SOT23
E
C
C
B
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information (Note 4)
Product
ZXTP749FTA
Notes:
Marking
1N8
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
717
1N8
ZXTP749F
Document Number: DS31901 Rev. 3 - 2
1N8 = Product type Marking Code
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A Product Line of
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ZXTP749F
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
-35
-25
-7
-3
-6
-500
Unit
V
V
V
A
A
mA
Value
725
172
79
-55 to +150
Unit
mW
°C/W
°C/W
°C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
PD
RθJA
RθJL
TJ, TSTG
5. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTP749F
Document Number: DS31901 Rev. 3 - 2
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ZXTP749F
0.8
10 VCE(sat)
Max Power Dissipation (W)
-IC Collector Current (A)
Thermal Characteristics and Derating information
Limited
1
DC
1s
100ms
100m
10ms
Single Pulse
T amb=25°C
10m
100m
1ms
100µs
1
10
-VCE Collector-Emitter Voltage (V)
0.6
0.4
0.2
0.0
0
20
120
D=0.5
80
60
40
100 120 140 160
T amb=25°C
140
100
80
Derating Curve
Maximum Power (W)
Thermal Resistance (°C/W)
160
60
Temperature (°C)
Safe Operating Area
180
40
D=0.2
Single Pulse
D=0.05
20
0
100µ
D=0.1
1m
10m 100m
1
Pulse Width (s)
10
100
1k
Transient Thermal Impedance
ZXTP749F
Document Number: DS31901 Rev. 3 - 2
Single Pulse
T amb=25°C
100
10
1
100µ
1m
10m 100m
1
10
Pulse Width (s)
100
1k
Pulse Power Dissipation
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ZXTP749F
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVEBO
Min
-35
-25
-7
Typ
-60
-40
-8.4
Collector Cutoff Current
ICBO
-
<1
Emitter Cutoff Current
IEBO
-
hFE
Static Forward Current Transfer Ratio (Note 7)
Collector-Emitter Saturation Voltage (Note 7)
VCE(sat)
Base-Emitter Turn-On Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
VBE(on)
VBE(sat)
Notes:
Max
-
Unit
V
V
V
-50
nA
-0.5
µA
<1
-50
nA
200
130
100
25
320
230
180
50
500
-
-85
-229
-786
-895
-150
-350
-850
-1000
-
-
-
-
mV
mV
mV
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -28V
VCB = -28V, TA = +100°C
VEB = -5.6V
IC = -100mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -2A, VCE = -2V
IC = -6A, VCE = -2V
IC = -1A, IB = -100mA
IC = -3A, IB = -300mA
IC = -1A, VCE = -2V
IC = -1A, IB = -100mA
7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
ZXTP749F
Document Number: DS31901 Rev. 3 - 2
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ZXTP749F
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1
Tamb=25°C
- VCE(sat) (V)
10m
- VCE(sat) (V)
IC/IB=50
100m
IC/IB=10
0.3
IC/IB=100
IC/IB=10
IC/IB=20
150°C
0.2
100°C
0.1
25°C
-55°C
1m
1m
10m
100m
0.0
10m
1
- IC Collector Current (A)
100m
1
- IC Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
1.2
500
400
IC/IB=10
VCE=-2V
1.0
100°C
- VBE(sat) (V)
Typical Gain (hFE)
150°C
300
25°C
200
100
0
1m
-55°C
10m
100m
1
- IC Collector Current (A)
0.8
0.6
hFE v IC
10m
100m
1
- IC Collector Current (A)
180
VCE=-2V
25°C
-55°C
0.8
0.6
150°C
0.4
100°C
10m
100m
1
- IC Collector Current (A)
Capacitance (pF)
160
1.0
- VBE(on) (V)
100°C
VBE(sat) v IC
1.2
0.2
1m
150°C
0.4
0.2
1m
10
-55°C
25°C
140
Document Number: DS31901 Rev. 3 - 2
Cibo
120
100
80
60
40
Cobo
20
0
10m
100m
1
- Voltage(V)
10
Capacitance v Voltage
VBE(on) v IC
ZXTP749F
f = 1MHz
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A Product Line of
Diodes Incorporated
ZXTP749F
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
M
K1
D
F
J
L
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
ZXTP749F
Document Number: DS31901 Rev. 3 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
2.0
C
1.35
E
E
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ZXTP749F
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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ZXTP749F
Document Number: DS31901 Rev. 3 - 2
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