PHILIPS BUK7K6R8-40E Dual n-channel 40 v, 6.8 mî© standard level mosfet Datasheet

LF
PA
K
56D
BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
6 November 2013
Product data sheet
1. General description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package
using TrenchMOS technology. This product has been designed and qualified to
AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
•
•
•
•
•
Dual MOSFET
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) of greater than 1 V at 175 °C
3. Applications
•
•
•
•
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
40
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
-
-
40
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
-
64
W
VGS = 10 V; ID = 20 A; Tj = 25 °C;
-
5.8
6.8
mΩ
-
9.1
-
nC
Static characteristics FET1 and FET2
RDSon
drain-source on-state
resistance
Fig. 12
Dynamic characteristics FET1 and FET2
QGD
gate-drain charge
ID = 20 A; VDS = 32 V; VGS = 20 V;
Tj = 25 °C; Fig. 14; Fig. 15
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BUK7K6R8-40E
NXP Semiconductors
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
S1
source1
2
G1
gate1
3
S2
source2
4
G2
gate2
5
D2
drain2
6
D2
drain2
7
D1
drain1
8
D1
drain1
Simplified outline
8
7
6
Graphic symbol
5
D1 D1
S1
D2 D2
G1
S2
G2
mbk725
1
2
3
4
LFPAK56D (SOT1205)
6. Ordering information
Table 3.
Ordering information
Type number
Package
BUK7K6R8-40E
Name
Description
Version
LFPAK56D
Plastic single ended surface mounted package (LFPAK56D); 8
leads
SOT1205
7. Marking
Table 4.
Marking codes
Type number
Marking code
BUK7K6R8-40E
76E840
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
40
V
VDGR
drain-gate voltage
RGS = 20 kΩ; Tj ≥ 25 °C; Tj ≤ 175 °C
-
40
V
VGS
gate-source voltage
Tj ≤ 175 °C; DC
-20
20
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
-
40
A
Tmb = 100 °C; VGS = 10 V; Fig. 1
-
40
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
-
276
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
64
W
BUK7K6R8-40E
Product data sheet
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BUK7K6R8-40E
NXP Semiconductors
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
Symbol
Parameter
Tstg
Conditions
Min
Max
Unit
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
Source-drain diode FET1 and FET2
IS
source current
Tmb = 25 °C
-
40
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
276
A
-
130
mJ
Avalanche Ruggedness FET1 and FET2
EDS(AL)S
non-repetitive drain-source
avalanche energy
[1]
[2]
ID = 40 A; Vsup ≤ 40 V; VGS = 10 V;
[1][2]
Tj(init) = 25 °C; Fig. 3
Refer to application note AN10273 for further information
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C
003aaj739
100
03aa16
120
ID
(A)
Pder
(%)
80
80
60
40
(1)
40
20
0
Fig. 1.
0
50
100
150
Tmb (°C)
0
200
Continuous drain current as a function of
mounting base temperature
BUK7K6R8-40E
Product data sheet
Fig. 2.
0
100
150
Tmb (°C)
200
Normalized total power dissipation as a
function of mounting base temperature
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BUK7K6R8-40E
NXP Semiconductors
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
003aaj673
103
IAL
(A)
102
(1)
10
(2)
1
(3)
10-1
10-2
10-3
Fig. 3.
10-2
10-1
1
tAL (ms)
10
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time, FET1 and
FET2
003aaj738
103
ID
(A)
Limit RDSon = V DS / ID
102
tp =10 µ s
100 µ s
10
1 ms
DC
1
10 ms
100 ms
10-1
10-1
Fig. 4.
1
10
102
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
-
2.36
K/W
BUK7K6R8-40E
Product data sheet
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BUK7K6R8-40E
NXP Semiconductors
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance
from junction to
ambient
Minimum footprint; mounted on a
printed circuit board
-
95
-
K/W
003aaj748
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
0.05
10-1
0.02
P
10-2
tp
T
δ=
single shot
tp
10-3
10-6
Fig. 5.
10-5
10-4
10-3
10-2
10-1
t
T
1
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
36
-
-
V
ID = 250 µA; VGS = 0 V; Tj = 25 °C
40
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
2.4
3
4
V
1
-
-
V
-
-
4.5
V
VDS = 40 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VDS = 40 V; VGS = 0 V; Tj = 25 °C
-
0.02
1
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 20 A; Tj = 25 °C;
-
5.8
6.8
mΩ
-
11
13.4
mΩ
Static characteristics FET1 and FET2
V(BR)DSS
VGS(th)
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10; Fig. 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Fig. 12
VGS = 10 V; ID = 20 A; Tj = 175 °C;
Fig. 12; Fig. 13
BUK7K6R8-40E
Product data sheet
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BUK7K6R8-40E
NXP Semiconductors
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Dynamic characteristics FET1 and FET2
QG(tot)
total gate charge
ID = 20 A; VDS = 32 V; VGS = 10 V;
-
28.9
-
nC
QGS
gate-source charge
Tj = 25 °C; Fig. 14; Fig. 15
-
7
-
nC
QGD
gate-drain charge
ID = 20 A; VDS = 32 V; VGS = 20 V;
-
9.1
-
nC
Tj = 25 °C; Fig. 14; Fig. 15
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
-
1460
1947
pF
Coss
output capacitance
Tj = 25 °C; Fig. 16
-
324
389
pF
Crss
reverse transfer
capacitance
-
197
270
pF
td(on)
turn-on delay time
VDS = 32 V; RL = 1.6 Ω; VGS = 10 V;
-
8.9
-
ns
tr
rise time
RG(ext) = 5 Ω; Tj = 25 °C; ID = 20 A
-
15.4
-
ns
td(off)
turn-off delay time
-
19.4
-
ns
tf
fall time
-
16.5
-
ns
Source-drain diode FET1 and FET2
VSD
source-drain voltage
IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
0.78
1.2
V
trr
reverse recovery time
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
20.6
-
ns
Qr
recovered charge
VDS = 20 V; Tj = 25 °C
-
11.3
-
nC
003aaj729
60
003aaj731
40
gfs
(S)
50
RDSon
(mΩ )
30
40
30
20
20
10
10
0
Fig. 6.
0
10
20
30
ID (A)
0
40
Forward transconductance as a function of
drain current; typical values
BUK7K6R8-40E
Product data sheet
Fig. 7.
0
4
12
16
VGS (V)
20
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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BUK7K6R8-40E
NXP Semiconductors
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
003aaj732
50
6.5
ID
(A)
40
7
ID
(A)
5.5
6
003aaj730
250
5
200
VGS (V) = 4.5
30
150
20
100
4
10
Tj = 175 °C
50
Tj = 25 ° C
3.5
0
Fig. 8.
0
1
2
3
VDS(V)
0
4
Output characteristics: drain current as a
Fig. 9.
function of drain-source voltage; typical values
003aah028
10-1
ID
(A)
0
2
4
min
typ
max
max
3
typ
10-4
2
min
10-5
1
10-6
0
2
4
VGS (V)
0
-60
6
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
BUK7K6R8-40E
Product data sheet
10
12
VGS (V)
003aah027
4
10-3
8
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
5
VGS(th)
(V)
10-2
6
0
60
120
T j (°C)
180
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
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BUK7K6R8-40E
NXP Semiconductors
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
003aaj736
50
RDSon
(mΩ )
40
4
a
4.5
30
003aaj813
2
1.6
1.2
V GS (V) = 5
0.8
20
5.5
6
10
6.5
7
10
0
0
10
20
30
0.4
40
ID (A)
0
-60
50
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
0
60
120
VGS
(V)
ID
180
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaj733
10
VDS
Tj (°C)
VGS(pl)
32 V
8
VDS =14 V
6
VGS(th)
VGS
4
QGS1
QGS2
QGS
QGD
QG(tot)
2
003aaa508
0
Fig. 14. Gate charge waveform definitions
0
10
20
QG (nC)
30
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
BUK7K6R8-40E
Product data sheet
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BUK7K6R8-40E
NXP Semiconductors
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
003aaj734
104
003aaj735
40
IS
(A)
C
(pF)
10
Ciss
30
Coss
20
3
Crss
102
Tj = 175 °C
10
10
10-1
1
10
VDS (V)
0
102
0
0.3
Tj = 25 °C
0.6
0.9
VSD (V)
1.2
Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source current as a function of source-drain
as a function of drain-source voltage; typical
voltage; typical values
values
BUK7K6R8-40E
Product data sheet
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BUK7K6R8-40E
NXP Semiconductors
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
11. Package outline
Plastic single ended surface mounted package (LFPAK56D); 8 leads
E
A
SOT1205
A
b1
c1
L1
mounting
base
D
H
D1
D2
L
1
2
3
e
b
(8x)
4
w
X
c
A
E1
E2
A1
C
θ
Lp
detail X
0
2.5
A
max 1.05
nom
min
mm
5 mm
scale
Dimensions
Unit
y C
c
c1
D(1) D1(1)
A1
b
b1
0.1
0.50
4.4
0.25 0.30 4.70
0.0
0.35
4.1
0.19 0.24 4.45
4.8
D2
(ref)
3.5
E(1) E1(1)
5.30
1.8
4.95
1.6
E2
0.85
e
1.27
H
L
L1
Lp
6.2
1.3
0.55 0.85
5.9
0.8
0.30 0.40
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
Outline
version
References
IEC
JEDEC
JEITA
w
y
θ
0.25
0.1
8°
0°
sot1205_po
European
projection
Issue date
13-02-19
13-02-21
SOT1205
Fig. 18. Package outline LFPAK56D (SOT1205)
BUK7K6R8-40E
Product data sheet
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BUK7K6R8-40E
NXP Semiconductors
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
BUK7K6R8-40E
Product data sheet
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
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in the customer’s applications or products, or the application or use by
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and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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BUK7K6R8-40E
NXP Semiconductors
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
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Translations — A non-English (translated) version of a document is for
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between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BUK7K6R8-40E
Product data sheet
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BUK7K6R8-40E
NXP Semiconductors
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 5
11
Package outline ................................................... 10
12
12.1
12.2
12.3
12.4
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 6 November 2013
BUK7K6R8-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 November 2013
© NXP N.V. 2013. All rights reserved
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